Applied Physics Letters

Papers
(The H4-Index of Applied Physics Letters is 53. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Voronoi diagrams metallic mesh for transparent EMI shielding399
Stable magnetocaloric effect over an ultrawide temperature range of 146–320 K via hydrostatic pressure in kagome magnets194
Single mode, distributed feedback interband cascade lasers grown on Si for gas sensing135
Sub-terahertz PAM4 modulator based on transmission characteristic reconstruction130
Effect of Cr/Al ratio on the microstructure and mechanical properties of CoFeNiCrxAl1−x high-entropy alloys116
Hanle spin precession induced inverted magnetoresistance in chiral/semiconductor systems111
Enhanced electronic property of wafer-scale monolayer MoS2 through S/Mo ratio optimization95
Lowering the skyrmion depinning current in synthetic antiferromagnetic systems95
Ultrasensitive probing of nematic order parameter via weak measurement94
Point defect diffusion in III-nitrides: A key mechanism for thermal degradation and non-radiative recombination in GaInN/GaN quantum well structures91
Compact 852 nm Faraday optical frequency standard91
Observation of transient trion induced by ultrafast charge transfer in graphene/MoS2 heterostructure90
Investigation of the 4f146s2 1S0−4f135d6s2 (J= 2) clock transition at 431 nm of 171Yb atoms trapped in an optical lattice90
Transmission of photonic entangled states encoded via eigenstates of photon-number parity operator88
High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β -Ga2O387
Aberration measurement by electron ptychography and consistency among different algorithms82
Signal-noise analysis of miniaturized delta-E effect magnetic field sensors81
Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation80
Polarization selectivity in single-mode photonic molecule lasers78
Detection efficiency characterization for free-space single-photon detectors: Measurement facility and wavelength-dependence investigation73
Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN73
Valley-contrasting physics, topological bands, and Dirac cone in the charge density wave phase of a 1T-MoS2 monolayer72
A multi-degree-of-freedom model-based method for Young's modulus determination of soft tissue by resonance spectroscopy72
Spin Hall effect in 3d ferromagnetic metals for field-free switching of perpendicular magnetization: A first-principles investigation71
High temperature complementary heterojunction tunnel field-effect transistors for low-power circuits71
Twisted spin waves in a cylindrical magnonic crystal70
Achieving ultrahigh piezoelectric coefficient and good temperature stability in (K,Na)NbO3-based laminated ceramic composites69
Rapid growth kinetics of β-Fe3Ge2 intermetallic compound within undercooled liquid Fe–Ge alloys69
Ultra-narrowband dielectric metasurfaces for surface-enhanced infrared absorption66
Depth-sensitive atomic ratio between iodine/lead and nitrogen/lead in lead halide perovskite film during octylammonium iodide-based surface modification66
Ferromagnetic enhancement of Fe3GaTe2/PtTe2 induced by interfacial spin–orbit coupling65
High-efficiency small-pixel-size InGaN green micro-LED arrays using ion implantation pixelization64
Spin-to-charge conversion at KTaO3(111) interfaces63
A homogeneous plasmon-enhanced Raman biosensor integrated with LASSO and deep learning approach to advance label-free and rapid diagnosis of urolithiasis62
Intelligent regulation of VO2-PDMS-driven radiative cooling61
Ferroelectric memristor based on Li-doped BiFeO3 for information processing61
Nonlinear geometric phase in optics: Fundamentals and applications61
Sensitive dependence of the linewidth enhancement factor on electronic quantum effects in quantum cascade lasers60
Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers60
Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio60
Identification of phonon symmetry and spin-phonon coupling in van der Waals antiferromagnetic FePSe359
Antiferromagnetic skyrmion-based logic gates controlled by electric currents and fields59
The influence of threading dislocations propagating through an AlGaN UVC LED57
Iontronic capacitance-enhanced LC wireless passive pressure sensor for high-performance flexible sensing57
Spin orbit torque switching of magnetization in the presence of two different orthogonal spin–orbit magnetic fields57
Spectral modulation of blocked-impurity-band hybrid structure terahertz detector57
Visualizing electron–phonon and anharmonic phonon–phonon coupling in the kagome ferrimagnet GdMn6Sn656
Prospective on doping engineering of conductive polymers for enhanced interfacial properties55
Anisotropic magnetoelectric transport in AgCrSe2 single crystals54
Porous silicon nanowires phase transformations at high temperatures and pressures54
Efficient THz generation from low-temperature-grown GaAs photoconductive antennas driven by Yb-doped fiber amplifier at 200 kHz repetition rate53
Anomalous thermal transport and high thermoelectric performance of Cu-based vanadate CuVO353
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective53
High-Q guided-mode resonance of a crossed grating with near-flat dispersion53
Development of the ZnO:Ga nanorod arrays as an alpha particle scintillation screen for the associated particle neutron generator53
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