OOIR: Observatory of International Research

Papers

(The H4-Index of Applied Physics Letters is 54. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-05-01 to 2024-05-01.)

Article	Citations
Perspective on the future of silicon photonics and electronics	256
A 1.86-kV double-layered NiO/ β -Ga2O3 vertical p–n heterojunction diode	145
Two-dimensional van der Waals electrical contact to monolayer MoSi2N4	141
Superconducting nanowire single-photon detectors: A perspective on evolution, state-of-the-art, future developments, and applications	131
Solar-driven thermal-wind synergistic effect on laser-textured superhydrophilic copper foam architectures for ultrahigh efficient vapor generation	126
Spin-orbit torques: Materials, physics, and devices	105
Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation	102
Developing silicon carbide for quantum spintronics	101
Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors	100
Low defect density and small I−V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2	96
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes	91
Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization	86
Interfacial charge transfer exciton enhanced by plasmon in 2D in-plane lateral and van der Waals heterostructures	85
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors	85
Recent developments, challenges, and pathways to stable dropwise condensation: A perspective	83
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor	83
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W	80
Myths and truths about optical phase change materials: A perspective	79
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy	79
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2	77
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals	75
A reconfigurable active acoustic metalens	71
Semiconductor-to-metal transition in bilayer MoSi2N4 and WSi2N4 with strain and electric field	71
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings	70
Temporal multilayer structures for designing higher-order transfer functions using time-varying metamaterials	69

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes	69
A Dirac-semimetal two-dimensional BeN4: Thickness-dependent electronic and optical properties	69
Radiative cooling for continuous thermoelectric power generation in day and night	66
Broadband topological valley transport of elastic wave in reconfigurable phononic crystal plate	66
Deterministic quantum entanglement between macroscopic ferrite samples	64
Acoustic impedance regulation of Helmholtz resonators for perfect sound absorption via roughened embedded necks	63
Goos–Hänchen effect enabled optical differential operation and image edge detection	63
Auger scattering dynamic of photo-excited hot carriers in nano-graphite film	63
Determining the angle-of-arrival of a radio-frequency source with a Rydberg atom-based sensor	63
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE	62
Half-Heusler thermoelectric materials	61
Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing	60
Differential quartz-enhanced photoacoustic spectroscopy	59
Tunable magnetic properties in van der Waals crystals (Fe1−xCox)5GeTe2	59
Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1−x)O2 thin films	59
Two-dimensional porous graphitic carbon nitride C6N7 monolayer: First-principles calculations	59
Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films	58
Perspectives in flow-induced vibration energy harvesting	58
Low temperature homoepitaxy of (010) β -Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window	58
Transverse thermoelectric generation using magnetic materials	58
A predictive model of the temperature-dependent inactivation of coronaviruses	56
Quantum neuromorphic computing	55
Prospects and challenges of quantum emitters in 2D materials	55
Tunable underwater acoustic metamaterials via quasi-Helmholtz resonance: From low-frequency to ultra-broadband	55
Active controllable spin-selective terahertz asymmetric transmission based on all-silicon metasurfaces	55
AI-enabled high-resolution scanning coherent diffraction imaging	55
Experimental investigation of amplification, via a mechanical delay-line, in a rainbow-based metamaterial for energy harvesting	54
Experimental demonstration of externally driven millimeter-wave particle accelerator structure	54
Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios	54