Applied Physics Letters

Papers
(The H4-Index of Applied Physics Letters is 52. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
Aluminum: A qualified material for Tamm plasmon polariton in visible band129
Large strain contribution to the laser-driven magnetization response of magnetostrictive TbFe2113
Electric field driven polarization extension phenomenon in multiferroic oxide112
Textured-piezoelectric-ceramic-based focused intravascular ultrasonic transducer with improved image quality and uniformity104
Synaptic properties of plasma-treated SnS2/h-BN van der Waals heterostructure99
Mechanically tunable Schottky diodes based on silicon microstructure arrays via flexoelectricity94
Microwave response of chiral magnetic soliton in Yb(Ni1−xCux)3Al991
Theoretical study on isostructural pressure-induced phase transition of solid ethane at extremely low temperature88
Dynamics of the fractional quantum Hall edge probed by stroboscope measurements of trions86
Anisotropic magnetoelectric transport in AgCrSe2 single crystals84
Controllable epitaxy of quasi-one-dimensional topological insulator α-Bi4Br4 for the application of saturable absorber78
Revealing topological attributes of stiff plates by Dirac factorization of their 2D elastic wave equation77
Piezoelectric response and ferromagnetic order in 2D Janus FeGeN376
van der Waals epitaxy of 2D h-AlN on TMDs by atomic layer deposition at 250 °C76
Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique74
Optimal generation of delay-controlled few-cycle pulses for high harmonic generation in solids72
High-performance electron mobility and photoabsorption in Bi2O2Se nanoribbons68
Realization of the square-root higher-order topology in decorated Su–Schrieffer–Heeger electric circuits67
A nonvolatile memory element for integration with superconducting electronics67
Spin Seebeck effect in quantum magnet Pb2V3O966
Enhancing carrier collection in CsPbBr3 solar cells through crystal orientation and defect passivation66
A non-iterative foveated single-pixel imaging using fast transformation algorithm66
High breakdown electric field diamond Schottky barrier diode with HfO2 field plate66
High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping65
Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights65
Arbitrary self-rotating beam array generated with the synthetic phase64
Flexible planar Hall effect sensor with sub-200 pT resolution64
Effects of local chemical ordering on the thermal transport in entropy-regulated PbSe-based thermoelectric materials64
High and broadband sensitivity front-side illuminated InGaAs photo field-effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate64
Faraday rotation in nonreciprocal photonic time-crystals63
Non-monotonic fluctuation of structural heterogeneity in metallic glass due to cyclic rapid heat treatment62
Suppression of nonideal leakage current in a-InGaZnO Schottky diode with edge termination structures62
Voltage-controlled magnetic anisotropy effect through a LiF/MgO hybrid tunneling barrier60
Polarization and mismatch controllable band alignment transitions and photocatalytic properties in CuInP2S6/MoTe2 heterostructures60
Monolithically integrated mode converter from terahertz substrateless silicon guide to conductive slotline60
Cryogenic reconfigurable logic with superconducting heater cryotron: Enhancing area efficiency and enabling camouflaged processors60
Strong dependence of air stability on thickness in n-doped carbon nanotube thermoelectrics60
Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si59
Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition58
NiCoB based in-plane energy storage textile with enhanced mechanical performance57
Axisymmetrical resonance modes in an electrowetting optical lens56
Realizing an ultralow thermal conductivity via interfacial scattering and rational-electronic band reformation in p-type Mg3Sb256
Co-existence of bipolar nonvolatile and volatile resistive switching based on WO3 nanowire for applications in neuromorphic computing and selective memory56
Chirality-selective electromagnetically induced transparency in a dielectric metasurface based on chirality transfer between bright and dark modes55
Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs55
Monolithic III-nitride photonic circuit on a single chip54
Surface treatments affect GaN surface quantum well emission53
Significant phonon anharmonicity drives phase transitions in CsPbI353
Bismuth ferrite-modified lead-free ceramics with reduced sintering temperature and improved energy storage properties52
A compact, transportable optical clock with 1×10−17 uncertainty and its absolute frequency measurement52
MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors52
Controllable optical Zitterbewegung in PT-symmetric photonic lattices52
High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O3 thin film grown on Si substrate52
High finesse microcavities in the optical telecom O-band52
High comprehensive energy storage properties in (Sm, Ti) co-doped sodium niobate ceramics52
Quantum technologies in diamond enabled by laser processing52
Toward low-power-consumption source-gated phototransistor52
Topological and chiral superconductor nanoarchitectures52
Multilayered magnetoelectric composites for precise and wide-range current sensing52
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