Applied Physics Letters

Papers
(The H4-Index of Applied Physics Letters is 53. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
Aluminum: A qualified material for Tamm plasmon polariton in visible band135
Large strain contribution to the laser-driven magnetization response of magnetostrictive TbFe2115
Electric field driven polarization extension phenomenon in multiferroic oxide113
Textured-piezoelectric-ceramic-based focused intravascular ultrasonic transducer with improved image quality and uniformity112
Synaptic properties of plasma-treated SnS2/h-BN van der Waals heterostructure105
Mechanically tunable Schottky diodes based on silicon microstructure arrays via flexoelectricity97
Theoretical study on isostructural pressure-induced phase transition of solid ethane at extremely low temperature95
Dynamics of the fractional quantum Hall edge probed by stroboscope measurements of trions93
Anisotropic magnetoelectric transport in AgCrSe2 single crystals92
Single-photon generation from a neodymium ion in optical fiber at room temperature89
Plasmonic enhancement in deep ultraviolet photoresponse of hexagonal boron nitride thin films81
Spectral modulation of blocked-impurity-band hybrid structure terahertz detector80
Progress and challenges on 3D tubular structures and devices of 2D materials79
Two-dimensional metals thickness scaling effect on electrical contact in metal–semiconductor junctions: Carrier transport and ultrafast dynamics study78
Role of TiO2 as a cathode buffer layer for minimizing electron injection barrier at the Co/Alq3 interface77
High-performance broadband WO3x/Bi2O2Se photodetectors based on plasmon-induced hot-electron injection77
Co-existence of bipolar nonvolatile and volatile resistive switching based on WO3 nanowire for applications in neuromorphic computing and selective memory72
Nonvolatile regulation of room-temperature electronic properties of Cr:In2O3 thin films by ferroelectric polarization charge and light illumination72
NiCoB based in-plane energy storage textile with enhanced mechanical performance70
High-Q guided-mode resonance of a crossed grating with near-flat dispersion70
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors69
High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection69
Zero-field spin wave turns68
Spin–orbit fields induced by topological insulator in (Ga,Mn)As/Bi2Te3 heterostructures68
Regulating the spin configuration of FeNC catalysts with CeO2 to enhance their activity and stability in PEMFCs68
Revealing topological attributes of stiff plates by Dirac factorization of their 2D elastic wave equation68
Piezoelectric response and ferromagnetic order in 2D Janus FeGeN367
Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique67
A nonvolatile memory element for integration with superconducting electronics66
Optimal generation of delay-controlled few-cycle pulses for high harmonic generation in solids66
Polarization and mismatch controllable band alignment transitions and photocatalytic properties in CuInP2S6/MoTe2 heterostructures64
Enhancing carrier collection in CsPbBr3 solar cells through crystal orientation and defect passivation64
Surface treatments affect GaN surface quantum well emission62
Suppression of nonideal leakage current in a-InGaZnO Schottky diode with edge termination structures62
Voltage-controlled magnetic anisotropy effect through a LiF/MgO hybrid tunneling barrier62
High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O3 thin film grown on Si substrate61
Monolithic III-nitride photonic circuit on a single chip61
Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs61
Revealing the size dependence on point field emitter emission beam through continuous work function and atomic precise electric field60
Gate-tunable molybdenum disulfide/germanium heterostructure with ambipolar infrared photoresponse59
Investigation on the structural and electronic property of monoclinic Al2O3/β-Ga2O3 superlattice with varying layer periods58
Spin waves in ferrimagnets near the angular magnetization compensation temperature: A micromagnetic study58
Double-layer LiNbO3 longitudinally excited shear wave resonators with ultra-large electromechanical coupling coefficient and spurious-free performance57
Grating-based microcavity with independent control of resonance energy and linewidth for non-Hermitian polariton system57
Tunable-wavelength photoluminescence of a flexible transition metal doped oxide phosphor thin film56
Retraction: “Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates” [Appl. Phys. Lett. 58, 2090 (1991)]56
Erratum: “Single β-Ga2O3 nanowire based lateral FinFET on Si” [Appl. Phys. Lett. 120, 153501 (2022)]55
Intense light emission from discharge plasma coupled with metal oxides particles54
Synthesis of high-crystalline ReS2 monolayers by sodium-assisted chemical vapor deposition54
Importance of metallic nanotube flexibility on its field emission characteristics54
Experiments on unidirectional excitation of designer flexural edge waves54
Room temperature colossal superparamagnetic order in aminoferrocene–graphene molecular magnets54
Hard x-ray photoemission study of bulk single-crystalline InGaZnO453
Experimental demonstrations of Josephson threshold detectors for broadband microwave photons detection53
MoO2-modified carbon nanotablets prepared by assembly of a polyoxomolybdate precursor for enhanced microwave absorption properties53
Robust and tunable oxide nanoscrolls for solar-driven H2 generation and storage53
Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures53
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