OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)

Article	Citations
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	332
Improved Performance of MoS₂ Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO₂/Al₂O₃	117
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	110
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	109
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	104
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	93
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates	90
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	82
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	82
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	71
Changes in the Editorial Board	69
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing	66
Table of Contents	65
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	61
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs	60
A Physics-Based Compact Model for Silicon Cold-Source Transistors	60
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study	56
First Experimental Demonstration of TiN_xO_y Resistive Field Plate on p-GaN HEMTs Wi	56
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator	56
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet	54
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing	54
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors	53
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device	51
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors	51
Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing	51

Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors	50
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration	48
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch	48
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology	48
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop	48
Optimized Design of W -Band High-Power Folded-Waveguide Traveling-Wave Tube	48
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines	46
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying V_G/V_D Stress in GAA Nanosheet PFETs	46
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain	46
Stack Optimization of TiO _x -Based Resistive Switching Devices Through Interface Engineering	45
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT	44
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H₂S Gas Sensor for Oil and Gas Industry	44
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO₃	44
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory	44
IEEE Transactions on Electron Devices Publication Information	44
Monolithic 3-D Integration of 2T0C DRAM and 1T1R RRAM for Accelerating Dynamic/Static Matrix Computation in Transformer Network	44
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress	43
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories	43
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors	43
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing	43