OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 42. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)

Article	Citations
IEEE Transactions on Electron Devices information for authors	237
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	143
Improved Performance of MoS₂ Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO₂/Al₂O₃	101
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	98
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	98
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements	94
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	85
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	82
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates	75
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals	70
Utilizing Valley–Spin Hall Effect in Monolayer WSe₂ for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops	65
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	62
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	60
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	59
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron	58
Changes in the Editorial Board	57
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing	56
Table of Contents	56
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	56
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs	55
Physical Compact Model for Source-Gated Transistors for DC Application	55
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures	52
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp	52
A Physics-Based Compact Model for Silicon Cold-Source Transistors	51
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors	51

Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification	50
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory	50
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress	48
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors	48
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs	48
Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing	47
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell	47
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study	47
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication	46
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse	45
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator	44
High Switching Speed and Stability ECM STO Resistive Memory on n⁺-Si Substrate Realized Using Cu Filament Mechanism	44
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs	44
First Experimental Demonstration of TiN_xO_y Resistive Field Plate on p-GaN HEMTs Wi	43
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films	43
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop	42
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch	42
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain	42