IEEE Transactions on Electron Devices

Papers
(The H4-Index of IEEE Transactions on Electron Devices is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-08-01 to 2025-08-01.)
ArticleCitations
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops133
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors114
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs91
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform88
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress85
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors78
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator78
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron76
Changes in the Editorial Board64
IEEE Transactions on Electron Devices publication information64
2021 EDS Education Award call for nominations58
IEEE Transactions on Electron Devices information for authors56
Design of Novel InP/InGaAs Photodetectors With NiO Transparent p-Region and Electrode55
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs54
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field54
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors53
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O352
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration52
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory52
Mitigation of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Through Use of Correction Frame52
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency52
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C51
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs50
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure50
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling48
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs48
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs48
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor47
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate47
Defect-Engineered Resistive Switching in van der Waal Metals46
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs46
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements45
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation44
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores44
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”44
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application44
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT44
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs44
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode43
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material43
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals43
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor43
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs43
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates43
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