IEEE Transactions on Electron Devices

Papers
(The H4-Index of IEEE Transactions on Electron Devices is 41. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-06-01 to 2025-06-01.)
ArticleCitations
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness104
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops97
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet89
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs84
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study80
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors79
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs76
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform76
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence71
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors60
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress60
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator59
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors58
Changes in the Editorial Board53
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron53
IEEE Transactions on Electron Devices publication information52
2021 EDS Education Award call for nominations51
IEEE Transactions on Electron Devices information for authors50
Performance Analysis of the Direct-Charge β-Radiation Energy-Harvesting Method49
Compensating Nonuniform OLED Pixel Brightness in a Vertical Blanking Interval by Learning TFT Characteristics49
Accurate and Efficient Algorithm for Computing Structure Functions From the Spatial Distribution of Thermal Properties in Electronic Devices49
Design of Novel InP/InGaAs Photodetectors With NiO Transparent p-Region and Electrode48
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs47
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition47
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field46
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch46
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors46
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration45
Mitigation of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Through Use of Correction Frame45
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O345
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency45
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory45
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs44
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C44
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure43
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling43
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs42
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress42
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs42
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect41
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor41
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs41
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate41
A Physics-Based Compact Model for Silicon Cold-Source Transistors41
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