OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 41. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)

Article	Citations
Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications	92
TechRxiv: Share Your Preprint Research with the World!	86
Table of Contents	82
IEEE Transactions on Electron Devices Information for Authors	80
Blank Page	74
Sc₀.₁Al₀.₉N-Based Bimorph Piezoelectric MEMS Microphones With Tractive Structures	73
IEEE Transactions on Electron Devices Information for Authors	73
Enhancing Broadband 4H-SiC Photodetectors With Gold Nanoparticles: Expanding Sensitivity From UV to SWIR Spectrum	72
Theoretical and Experimental Investigations on Input Couplers for a G-Band Gyro-TWT	72
Semiconductor Device Modeling for Circuit and System Design	70
Achieving Optimal Impact Ionization-Limited Breakdown Voltages in Scaled mm-Wave InP/GaInAsSb DHBTs	66
Enabling High-Sensitivity Calorimetric Flow Sensor Using Vanadium Dioxide Phase-Change Material With Predictable Hysteretic Behavior	58
Evaluation and Establishment of an Empirical Model for the Dynamic Ron Effect of GaN Power Device in Hard Switching Mode	56
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	55
Design and Experiment of a Compact Circular Waveguide TM₀₁ to TE₀₁ Mode Converter	53
Table of Contents	53
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications	52
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines	51
Fast Electron Gun Design Methodology Based on Fitting the Beam-Edge Potential Profiles	51
Achieving 1-nm-Scale Equivalent Oxide Thickness Top-Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors With CMOS-Friendly Approaches	49
Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects	49
Dual-Band Terahertz Harmonic Gyrotron Driven by Axis-Encircling Electron Beam	47
Investigation of Bottom Gate Connection in Double-Gate a-IGZO TFTs for Optimizing Compensation Performance of AMOLED Displays	47
Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification	46
The Implications of Collisions on the Spatial Profile of Electric Potential and the Space-Charge-Limited Current	46

High-Q Switchable BAW Resonators With 5-V Switching Voltages and Through GaN Vias	45
Physical Compact Model for Source-Gated Transistors for DC Application	45
Materials, processing and integration for neuromorphic devices and in-memory computing	44
Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short-Circuit Condition	44
From Mega to nano: Beyond one Century of Vacuum Electronics	44
IEEE ELECTRON DEVICES SOCIETY	43
Blank Page	43
Plasma Jet Printing: An Introduction	43
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings	42
IEEE Transactions on Electron Devices information for authors	42
Experimental Demonstration of Holey Silicon-Based Thermoelectric Cooling	42
Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications	42
An Accurate Drain Current Model of Multichannel Cylindrical High-K HfO₂-/Si₃N₄-Based GAA-MOSFET for SRAM Application	42
Introducing IEEE Collabratec	41
New Erratic Program Disturbance Mechanism of 2T-SONOS Embedded Nonvolatile Memory	41
Table of Contents	41
Awards Flyer	41
IEEE Transactions on Electron Devices information for authors	41
Dielectrics for 2D electronics	41