OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 44. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)

Article	Citations
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	432
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	145
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	120
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	97
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	89
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	75
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	74
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	72
Changes in the Editorial Board	62
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing	61
Table of Contents	60
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	59
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop	58
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices	57
IEEE Transactions on Electron Devices Publication Information	57
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors	56
A Physics-Based Compact Model for Silicon Cold-Source Transistors	54
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress	54
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs	54
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material	53
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process	51
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization	50
TiO₂ Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells	50
Defect-Engineered Resistive Switching in van der Waal Metals	50
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes	49

Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors	48
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂	48
IEEE Transactions on Electron Devices Publication Information	48
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET	48
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration	48
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures	48
Study on Scalable Model of Multifinger Structure for GaN p-i-n Diode	48
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores	47
Event-Driven CsPbBr₃ Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes	47
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence	46
Contact/Via Failure Recovery Using Nanosecond Green Laser Annealing	46
Research on Bonding Strength Enhancement Process of Micro LED Devices Filled With Epoxy Resin Adhesive	46
Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation	46
Plasma Jet Printing: An Introduction	45
A Graphene/Ge Heterostructure-Based Short-Wavelength Infrared Photodetector With >1 AW ^--1 Responsivity Boosted by a CuI Antireflection Layer	45
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs	45
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor	45
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements	44
Ga ₂ O ₃ TCAD Mobility Parameter Calibration Using Simulation Augmented Machine Learning With Phys	44
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W	44