IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors332
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3117
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs110
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs109
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”104
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs93
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates90
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator82
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform82
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors71
Changes in the Editorial Board69
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing66
Table of Contents65
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing61
A Physics-Based Compact Model for Silicon Cold-Source Transistors60
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs60
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator56
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study56
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi56
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet54
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing54
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors53
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors51
Sigmoid Probabilistic Bits Using SiO Threshold Switching Devices for Probabilistic Computing51
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device51
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors50
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop48
Optimized Design of W -Band High-Power Folded-Waveguide Traveling-Wave Tube48
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration48
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch48
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology48
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain46
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines46
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs46
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering45
IEEE Transactions on Electron Devices Publication Information44
Monolithic 3-D Integration of 2T0C DRAM and 1T1R RRAM for Accelerating Dynamic/Static Matrix Computation in Transformer Network44
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT44
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry44
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO344
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory44
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing43
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress43
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories43
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors43
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization42
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes42
Plasma Jet Printing: An Introduction42
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells42
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs41
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs41
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂41
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence40
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode40
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals40
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode39
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor39
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol39
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C39
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector38
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron38
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction38
Alpha Particle Detection Using Highly Rectifying Ni/Ga 2 O 3 /4H-SiC Heteroepitaxial MOS Junction38
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores37
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT37
Defect-Engineered Resistive Switching in van der Waal Metals37
Compact Modeling of Impact Ionization in High-Voltage Devices37
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition37
Event-Driven CsPbBr3 Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes36
Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation36
Research on Bonding Strength Enhancement Process of Micro LED Devices Filled With Epoxy Resin Adhesive36
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection36
Contact/Via Failure Recovery Using Nanosecond Green Laser Annealing36
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization36
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs35
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process35
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices35
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material35
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field35
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors34
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness34
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation34
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects34
Ga 2 O 3 TCAD Mobility Parameter Calibration Using Simulation Augmented Machine Learning With Phys33
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W33
Contact Length Scaling in In 2 O 3 and InGaZnO FETs: Critical Roles of Quantum Confinement and Ind33
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor33
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements33
Recovery Operation in HfZrO x -Based FeFETs With Interfacial Layer Scavenging33
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification32
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs32
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing32
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs32
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor32
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness32
A Review on Cell Structure Optimization of IGBT Under Overload Condition32
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation32
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling32
Analysis of Thermal Disturbance in Vertically Stacked Phase-Change Memory Using Multiphysics Simulation31
Study on Scalable Model of Multifinger Structure for GaN p-i-n Diode31
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures31
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer31
IEEE Transactions on Electron Devices Publication Information31
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication31
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell31
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si31
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET31
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency31
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor31
A Graphene/Ge Heterostructure-Based Short-Wavelength Infrared Photodetector With >1 AW --1 Responsivity Boosted by a CuI Antireflection Layer30
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings30
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse30
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate29
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams29
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration29
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S229
Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors29
Thickness-Dependent Enhancement of Ferroelectric Properties in ${\text{HfZrO}_{x}}$ Devices by Bottom ${\text{TiO}_{2}}$ Interlayer29
Investigation on Electrical–Thermal-Stress Failure of GaN HEMTs Under High-Power Microwave-Induced Pulse Injection29
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs29
Fully Physical BTI Analysis Tool (BAT) for Modeling of NBTI Architecture, Materials, Process, and Dimension Dependence29
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy28
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment28
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs28
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain28
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection28
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules28
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films28
Physical Compact Model for Source-Gated Transistors for DC Application28
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective28
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs27
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp27
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors27
High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism27
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study27
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness27
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect27
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation27
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory27
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application27
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension27
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals27
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress26
One-Step Complementary-Magnetization-Switching Spin-Orbit Torque Memory Based on U-Shaped Bending Current for Compute-in-Memory Applications26
LTPS TFT-Based Optical Sensor Detecting Degradation of OLED to Improve Image Sticking for AMOLED Displays26
A SPICE-Compatible High-Efficiency Equivalent Mechanical Circuit Method for Electro-Thermal-Mechanical Coupling Simulation26
Tailoring the Sensitivity-Range Tradeoff in Monolithic InGaN/GaN Temperature Sensing Devices via Indium Content Engineering26
Accurate ML-Based Prediction of Next-Generation nand With Limited Data Using Generative AI and Transfer Learning26
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time26
High-Stability and High-Charge-Density HfZrO 2 MFM Capacitors With In Situ CF 4 Plasma at TiN Elec26
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory26
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen26
IEEE ELECTRON DEVICES SOCIETY25
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs25
IEEE ELECTRON DEVICES SOCIETY25
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs25
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes25
The Rectification Ability in the Si-Based Geometric Diode Based on Au/p-Si Nanocone/Au Heterostructure25
IEEE Transactions on Electron Devices Information for Authors25
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Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy25
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Tandem Evaluation of AlN/β - and ε-Ga2O3 Tri-Gate MOSHEMTs25
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design25
Investigation of a Low-Loss Transmission Structure for W-Band TWT25
IEEE Transactions on Electron Devices information for authors25
IEEE ELECTRON DEVICES SOCIETY25
IEEE Transactions on Electron Devices Information for Authors25
A Capacitance Extraction Method Using Local Discontinuous Galerkin Method on Adaptive Triangular Meshes25
Review of Quanta Image Sensors for Ultralow-Light Imaging25
IEEE Transactions on Electron Devices Information for Authors25
Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode24
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit24
Thermal Dynamic of Single-Event Burnout in SiC Power MOSFETs24
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency24
Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation24
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations24
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier24
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases24
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture24
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs24
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method24
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator24
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors24
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]24
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept24
A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States24
A Novel Electron Gun Design Approach With an Externally Assembled Anode24
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing24
Frequency Adaptive Single-Transistor Neuron Based on Temporal Charge Trapping24
Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling24
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure24
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET24
Electrothermal Design of Silicon-Doped Microheaters for Optical Phase Change Memory23
Impact of Ultrathin TiO 2 Interlayer on the Structure and Properties of All Atomic Layer Deposited TiN/Hf 0.5 23
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications23
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets23
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA23
Investigating the Properties of a New Vertical 4H-SiC Photoconductive Semiconductor Switch With a Double-Side Epitaxial Structure23
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging23
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs23
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress23
Reliability of Advanced Nodes23
A Wideband High-Power Microwave Mode Converter Using Vane-Loaded Waveguide23
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs23
A Proton Irradiation Damage Compact Model of HfO x /TiO 23
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz23
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether23
A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz23
Control of Resistive Switching Endurance in TiO2/TiO2–x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation23
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies23
Carrier Mobility in a 55-nm CMOS at 4 K: Characterization, Modeling, and Circuit Implications23
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure22
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application22
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs22
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode22
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop22
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor22
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage22
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube22
Dielectrics for 2-D Electronics: From Device to Circuit Applications22
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell22
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability22
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory22
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate22
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress22
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications22
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition22
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes22
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications22
Online Junction Temperature Detection for IGBTs Using Voltage Rise Time22
Self-Heating Mitigation of TreeFETs by Interbridges22
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers22
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector22
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations22
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors22
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature22
High-Performance 1200-V p-GaN Gate HEMT on Standard 650-V GaN-on-Si Epi-Wafer22
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration22
Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients21
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors21
Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer21
A Novel Self-Activated Gate-Clamping SiC MOSFET Enhancing Short Circuit Capability With Merit of Multicell Combination21
An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array21
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit21
The ESD Behavior of D-Mode GaN MIS-HEMT21
CNT/IGZO CFET Circuits Based on Top-Gate IGZO-FETs With Enhanced Hydrogen Resistance and Thermal Stability Using Y 2 O 321
A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance21
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences21
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