IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
IEEE Transactions on Electron Devices information for authors237
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors143
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3101
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs98
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs98
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements94
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”85
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs82
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates75
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals70
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops65
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform62
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator60
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors59
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron58
Changes in the Editorial Board57
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing56
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing56
Table of Contents56
Physical Compact Model for Source-Gated Transistors for DC Application55
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs55
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp52
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures52
A Physics-Based Compact Model for Silicon Cold-Source Transistors51
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors51
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory50
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification50
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors48
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs48
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress48
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell47
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study47
Sigmoid Probabilistic Bits Using SiO Threshold Switching Devices for Probabilistic Computing47
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication46
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse45
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs44
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator44
High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism44
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films43
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi43
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain42
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop42
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch42
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines41
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors41
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs41
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT40
IEEE Transactions on Electron Devices Publication Information40
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering40
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO339
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs39
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor39
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor39
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency38
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory38
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain38
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application38
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect38
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs38
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition38
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs37
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization37
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing37
Plasma Jet Printing: An Introduction37
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes37
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation37
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂37
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells37
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time37
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects36
Alpha Particle Detection Using Highly Rectifying Ni/Ga 2 O 3 /4H-SiC Heteroepitaxial MOS Junction36
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material36
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress36
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector36
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective36
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs36
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode36
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate36
A Graphene/Ge Heterostructure-Based Short-Wavelength Infrared Photodetector With >1 AW --1 Responsivity Boosted by a CuI Antireflection Layer35
Optimized Design of W -Band High-Power Folded-Waveguide Traveling-Wave Tube35
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors35
Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature35
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs35
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings35
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs35
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process35
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling35
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology35
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing35
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection35
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol34
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices34
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field34
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S234
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen34
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor34
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction33
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors33
Monolithic 3-D Integration of 2T0C DRAM and 1T1R RRAM for Accelerating Dynamic/Static Matrix Computation in Transformer Network33
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment33
Defect-Engineered Resistive Switching in van der Waal Metals32
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation32
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores32
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory32
Compact Modeling of Impact Ionization in High-Voltage Devices32
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT32
Research on Bonding Strength Enhancement Process of Micro LED Devices Filled With Epoxy Resin Adhesive31
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration31
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor31
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy31
Event-Driven CsPbBr3 Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes31
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C31
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode30
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness30
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study30
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization30
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET30
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device30
Contact/Via Failure Recovery Using Nanosecond Green Laser Annealing30
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet30
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules30
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si29
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact29
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories29
Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors29
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension29
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness29
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation29
Investigation on Electrical–Thermal-Stress Failure of GaN HEMTs Under High-Power Microwave-Induced Pulse Injection29
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry28
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection28
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration28
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors28
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer28
Recovery Operation in HfZrO x -Based FeFETs With Interfacial Layer Scavenging28
Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation28
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs28
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing28
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence28
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams28
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals28
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness27
IEEE ELECTRON DEVICES SOCIETY27
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum27
IEEE Transactions on Electron Devices Information for Authors27
TechRxiv: Share Your Preprint Research with the World!27
IEEE Transactions on Electron Devices information for authors27
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W27
IEEE ELECTRON DEVICES SOCIETY27
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET27
IEEE Transactions on Electron Devices Information for Authors27
Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy26
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs26
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies26
A Capacitance Extraction Method Using Local Discontinuous Galerkin Method on Adaptive Triangular Meshes26
Investigation of a Low-Loss Transmission Structure for W-Band TWT26
IEEE ELECTRON DEVICES SOCIETY26
Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits26
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs26
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets26
IEEE Transactions on Electron Devices Information for Authors26
Blank Page26
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer25
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs25
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing25
Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling25
A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam25
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface25
A Novel Electron Gun Design Approach With an Externally Assembled Anode25
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors25
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers25
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors25
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit25
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether25
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs25
IEEE Transactions on Electron Devices Information for Authors25
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design25
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage25
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN24
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications24
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]24
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier24
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop24
Control of Resistive Switching Endurance in TiO2/TiO2–x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation24
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA24
Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer24
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure24
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept24
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit24
Reliability of Advanced Nodes24
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture24
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations24
A Wideband High-Power Microwave Mode Converter Using Vane-Loaded Waveguide24
A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz23
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress23
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate23
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability23
Dielectrics for 2-D Electronics: From Device to Circuit Applications23
Multiport Relativistic Magnetron for Phased Array Application23
An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array23
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode23
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector23
HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance23
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell23
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs23
The ESD Behavior of D-Mode GaN MIS-HEMT23
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector23
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter23
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration23
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application23
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes22
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications22
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method22
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations22
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor22
Self-Heating Mitigation of TreeFETs by Interbridges22
Online Junction Temperature Detection for IGBTs Using Voltage Rise Time22
A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States22
1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination22
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors22
Review of Quanta Image Sensors for Ultralow-Light Imaging22
Low-Power Ultradeep-Submicrometer Junctionless Carbon Nanotube Field-Effect Diode22
Impact of Ultrathin TiO 2 Interlayer on the Structure and Properties of All Atomic Layer Deposited TiN/Hf 0.5 22
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory22
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency22
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure22
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs22
A RepetitiveKu-Band Coaxial Relativistic Klystron Amplifier Packaged With Permanent Magnets22
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs22
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube22
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates22
Thermal Dynamic of Single-Event Burnout in SiC Power MOSFETs22
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz22
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution22
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure22
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWT22
A Neuromorphic Brain Interface Based on RRAM Crossbar Arrays for High Throughput Real-Time Spike Sorting22
Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low R ON,sp22
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences21
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor21
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging21
Tandem Evaluation of AlN/β - and ε-Ga2O3 Tri-Gate MOSHEMTs21
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress21
Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit21
Effect of Substrate Bias in Ohmic p-Gate GaN-HEMTs on Unclamped Inductive Switching Capability21
Embedded Gate Driver Circuit With Self-Aligned InGaZnO TFTs Using Common Bootstrapped Capacitive Driving for High-Resolution WOLED Displays21
Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses21
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes21
An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode21
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases21
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