IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 7. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-08-01 to 2025-08-01.)
ArticleCitations
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops133
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors114
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs91
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform88
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress85
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors78
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator78
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron76
Changes in the Editorial Board64
IEEE Transactions on Electron Devices publication information64
2021 EDS Education Award call for nominations58
IEEE Transactions on Electron Devices information for authors56
Design of Novel InP/InGaAs Photodetectors With NiO Transparent p-Region and Electrode55
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs54
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field54
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors53
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O352
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration52
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory52
Mitigation of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Through Use of Correction Frame52
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency52
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C51
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs50
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure50
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs48
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling48
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs48
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate47
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor47
Defect-Engineered Resistive Switching in van der Waal Metals46
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs46
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements45
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation44
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores44
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”44
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application44
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT44
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs44
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode43
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material43
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals43
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor43
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs43
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates43
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices42
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy42
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp42
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection41
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective41
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen41
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study41
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures40
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing39
Physical Compact Model for Source-Gated Transistors for DC Application39
Table of Contents39
Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”38
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness38
Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs38
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer38
Reliable and Efficient Phosphor-in-Glass-Based Chip-Scale Packaging for High-Power White LEDs37
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors37
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines37
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification37
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device37
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams37
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact36
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection36
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S236
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time35
Alpha Particle Detection Using Highly Rectifying Ni/Ga2O3/4H-SiC Heteroepitaxial MOS Junction35
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization35
Preferable Parametric Model for the Lifetime of the Organic Light-Emitting Diode Under Accelerated Current Stress Tests35
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction35
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization35
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals34
Sigmoid Probabilistic Bits Using SiO Threshold Switching Devices for Probabilistic Computing34
Compact Modeling of Impact Ionization in High-Voltage Devices34
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation34
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication33
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode33
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry33
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory33
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors33
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs33
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation33
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO332
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence32
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing32
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells32
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET32
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor31
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs31
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop31
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain31
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol31
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules31
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration31
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs31
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment31
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT31
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors31
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology31
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study31
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator31
Complementary Vacuum Field Emission Transistor31
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects31
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch30
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories30
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering30
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness30
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet30
Implementing a Ternary Inverter Using Dual-Pocket Tunnel Field-Effect Transistors30
IEEE Transactions on Electron Devices Publication Information30
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings30
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W29
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory29
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress29
Reconfigurable MoTe2 Field-Effect Transistors and its Application in Compact CMOS Circuits29
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness29
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector29
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs29
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell29
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing28
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi28
Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature28
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs28
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes28
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition28
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect28
A Physics-Based Compact Model for Silicon Cold-Source Transistors28
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si28
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors28
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor28
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing28
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format28
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension28
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing27
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂27
IEEE Transactions on Electron Devices Information for Authors27
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET27
Accurate and Efficient Algorithm for Computing Structure Functions From the Spatial Distribution of Thermal Properties in Electronic Devices27
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain27
IEEE ELECTRON DEVICES SOCIETY27
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors27
Plasma Jet Printing: An Introduction27
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum27
IEEE ELECTRON DEVICES SOCIETY27
IEEE Transactions on Electron Devices information for authors26
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]26
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier26
Low-Power Ultradeep-Submicrometer Junctionless Carbon Nanotube Field-Effect Diode26
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs26
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations26
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure26
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes26
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs26
TechRxiv: Share Your Preprint Research with the World!26
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture26
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept26
Thermistor-Based Nematic Liquid Crystal IM95100-00026
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter25
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure25
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration25
A Neuromorphic Brain Interface Based on RRAM Crossbar Arrays for High Throughput Real-Time Spike Sorting25
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress25
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor25
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether25
A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN25
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution25
Self-Heating Mitigation of TreeFETs by Interbridges25
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors25
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit25
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers25
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes25
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor25
Thin Film Magnetic Core Microinductor With Stacked Windings25
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer25
A Novel Electron Gun Design Approach With an Externally Assembled Anode25
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage25
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface25
Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit25
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory25
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O324
IEEE Transactions on Electron Devices Information for Authors24
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors24
Investigation of a Multibeam Magnetron Injection Gun for a W-Band Sectorial-Tunnel Gyro-TWT24
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor24
A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam24
IEEE Transactions on Electron Devices Information for Authors24
Dielectrics for 2-D Electronics: From Device to Circuit Applications24
Blank Page24
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs24
IEEE ELECTRON DEVICES SOCIETY24
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA24
Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation24
Multiport Relativistic Magnetron for Phased Array Application23
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit23
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure23
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature23
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs23
Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low R ON,sp23
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube23
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector23
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method23
Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers23
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability23
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode23
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop23
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate23
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs22
Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses22
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWT22
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs22
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging22
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN22
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond22
Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits22
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design22
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator22
Investigation of a Low-Loss Transmission Structure for W-Band TWT22
Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy22
1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination22
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies22
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector22
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications22
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress22
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases22
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs22
IEEE Transactions on Electron Devices Information for Authors22
Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode21
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations21
Review of Quanta Image Sensors for Ultralow-Light Imaging21
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency21
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors21
A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance21
Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application21
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz21
Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients21
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates21
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs21
Reliability of Advanced Nodes21
Simulation of Parasitic Backward-Wave Excitation in High-Power Gyrotron Cavities21
Impact of Nonuniform Ozone Anneal Treatment on the Resistance Levels in an IGZO-ReRAM Fabricated on ITO-Coated Glass Substrate21
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell21
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors21
HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance21
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition21
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application21
A RepetitiveKu-Band Coaxial Relativistic Klystron Amplifier Packaged With Permanent Magnets21
An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode21
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