IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 7. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-05-01 to 2024-05-01.)
ArticleCitations
High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS97
Vertical β-Ga₂O₃ Power Transistors: A Review96
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia88
Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors81
FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric80
Improved Photoresponse Performance of Self-Powered β-Ga₂O₃/NiO Heterojunction UV Photodetector by Surface Plasmonic Effect of Pt Nanoparticles78
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices76
(Ultra)Wide-Bandgap Vertical Power FinFETs76
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability71
Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions71
Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits61
Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)60
Design, Performance, and Defect Density Analysis of Efficient Eco-Friendly Perovskite Solar Cell60
Opportunities in Device Scaling for 3-nm Node and Beyond: FinFET Versus GAA-FET Versus UFET58
Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application57
Optimization of Negative-Capacitance Vertical-Tunnel FET (NCVT-FET)54
Laser-Induced Graphene Printed Wearable Flexible Antenna-Based Strain Sensor for Wireless Human Motion Monitoring51
Investigation of CsSn0.5Ge0.5I3-on-Si Tandem Solar Device Utilizing SCAPS Simulation49
Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology Node48
Infrared Colloidal Quantum Dot Image Sensors47
Investigation of Carrier Transport Materials for Performance Assessment of Lead-Free Perovskite Solar Cells47
Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses45
Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies45
Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress43
“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs42
Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor42
1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current41
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I41
Encapsulated X-Ray Detector Enabled by All-Inorganic Lead-Free Perovskite Film With High Sensitivity and Low Detection Limit41
A Review of Hot Carrier Degradation in n-Channel MOSFETs—Part I: Physical Mechanism40
Graphene/PtSe2/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection40
N+ Pocket-Doped Vertical TFET for Enhanced Sensitivity in Biosensing Applications: Modeling and Simulation40
Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training39
Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study39
Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃38
Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen 38
Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs38
Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures38
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking37
High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal37
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior36
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors36
Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics36
High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer35
A Parallel Multibit Programing Scheme With High Precision for RRAM-Based Neuromorphic Systems35
SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge35
Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs34
TCAD-Augmented Machine Learning With and Without Domain Expertise34
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format34
Numerical Simulation: Design of High-Efficiency Planar p-n Homojunction Perovskite Solar Cells33
Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs33
Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs33
Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties33
Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD33
Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration33
Soft-Error Resilient Read Decoupled SRAM With Multi-Node Upset Recovery for Space Applications33
Enhanced Charge Extraction in Metal–Perovskite–Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study33
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II32
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions32
HRS Instability in Oxide-Based Bipolar Resistive Switching Cells32
Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration32
Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO₂ Electrode32
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters32
Hydrothermal Synthesis and Improved CH₃OH-Sensing Performance of ZnO Nanorods With Adsorbed Au NPs32
Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices31
Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications31
Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor31
16 × 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga2O3 Film31
A Vertical Combo Spacer to Optimize Electrothermal Characteristics of 7-nm Nanosheet Gate-All-Around Transistor31
A Highly Scalable Junctionless FET Leaky Integrate-and-Fire Neuron for Spiking Neural Networks31
Modeling of Photovoltaic Solar Cell Based on CuSbS₂ Absorber for the Enhancement of Performance30
Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron30
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization30
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel29
Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiOx Gate Materials29
A Unified PUF and TRNG Design Based on 40-nm RRAM With High Entropy and Robustness for IoT Security29
Computing-in-Memory Architecture Using Energy-Efficient Multilevel Voltage-Controlled Spin-Orbit Torque Device29
Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors29
Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs29
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfZr₁₋O₂Capacitors29
Computational Investigation of Negative Capacitance Coaxially Gated Carbon Nanotube Field-Effect Transistors29
Exploration of Negative Capacitance in Gate-All-Around Si Nanosheet Transistors29
Investigation of Read Disturb and Bipolar Read Scheme on Multilevel RRAM-Based Deep Learning Inference Engine28
FDTD-Based Optimization of Geometrical Parameters and Material Properties for GaAs-Truncated Nanopyramid Solar Cells28
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory28
Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET28
Applying Conformal Mapping to Derive Analytical Solutions of Space-Charge-Limited Current Density for Various Geometries28
Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications28
Modeling of Short-Channel Effects in GaN HEMTs28
Effect of Gate-Oxide Degradation on Electrical Parameters of Silicon Carbide MOSFETs28
CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications28
Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing27
Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer27
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs27
Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs27
A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs27
Design Optimization Techniques in Nanosheet Transistor for RF Applications27
Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode27
SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability27
On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)27
Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm27
Design and Characterization of an Aluminum Nitride-Based MEMS Hydrophone With Biologically Honeycomb Architecture27
Technology, Assembly, and Test of a W-Band Traveling Wave Tube for New 5G High-Capacity Networks27
A Comprehensive Study of Nanosheet and Forksheet SRAM for Beyond N5 Node26
Hydrogen Diffusion and Threshold Voltage Shifts in Top-Gate Amorphous InGaZnO Thin-Film Transistors26
Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation26
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach26
Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation26
Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption26
Reducing Power Consumption of Active-Matrix Mini-LED Backlit LCDs by Driving Circuit26
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD26
Study on Multilevel Resistive Switching Behavior With Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM26
Time Complexity of In-Memory Solution of Linear Systems26
Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiO x -Based Transparent Memristor26
Advanced DFT–NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Meta26
Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology25
AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity25
Direct Time-of-Flight Single-Photon Imaging25
Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x 25
Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector25
Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing25
Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation25
Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements25
Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure25
Active-Matrix Micro-LED Display Driven by Metal Oxide TFTs Using Digital PWM Method25
A Monolithic 3-D Integration of RRAM Array and Oxide Semiconductor FET for In-Memory Computing in 3-D Neural Network25
Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs25
Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays25
Reduction of Process Variations for Sub-5-nm Node Fin and Nanosheet FETs Using Novel Process Scheme25
MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization25
Revisiting the Time-Domain and Frequency-Domain Definitions of Capacitance25
Highly Sensitive Wearable Flexible Pressure Sensor Based on Conductive Carbon Black/Sponge25
Design of High Robustness BNN Inference Accelerator Based on Binary Memristors24
Electro-Thermal Performance Boosting in Stacked Si Gate-all-Around Nanosheet FET With Engineered Source/Drain Contacts24
A Review of Indirect Time-of-Flight Technologies24
Fabrication and Characterization of High-Voltage NiO/β-Ga2O3 Heterojunction Power Diodes24
RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays24
Analysis of the Ultrafast Transient Heat Transport in Sub 7-nm SOI FinFETs Technology Nodes Using Phonon Hydrodynamic Equation24
Study of a High-Performance Chemoresistive Ethanol Gas Sensor Synthesized With Au Nanoparticles and an Amorphous IGZO Thin Film24
Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method24
High-Performance Inverted Structure Broadband Photodetector Based on ZnO Nanorods/PCDTBT:PCBM:PbS QDs24
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films24
Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies24
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs24
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling24
Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation24
Simulation-Based Ultralow Energy and High-Speed LIF Neuron Using Silicon Bipolar Impact Ionization MOSFET for Spiking Neural Networks24
Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network Inference24
Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs24
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact24
Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs24
Toward Automated Defect Extraction From Bias Temperature Instability Measurements24
Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET24
Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs24
Accurate Computation of IGBT Junction Temperature in PLECS24
Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States24
BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update24
Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm24
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹23
Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension23
Noise-Resilient DNN: Tolerating Noise in PCM-Based AI Accelerators via Noise-Aware Training23
Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown23
Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability23
Ultrahighly Sensitive QCM Humidity Sensor Based on Nafion/MoS2 Hybrid Thin Film23
Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length23
Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate23
Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length23
Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process23
Memristor Based on TiO x /Al2O3 Bilayer as Flexible Artificial Synapse for Neuromorphic Electronics23
Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options23
Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors23
Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs23
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm223
InAlN/GaN HEMT on Si With fmax = 270 GHz23
Optimization of Hetero-Gate-Dielectric Tunnel FET for Label-Free Detection and Identification of Biomolecules23
High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates22
InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz22
Demonstration of a High-Power Ka-Band Extended Interaction Klystron22
0.5T0.5R—An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures22
Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs22
Investigation of a Highly Sensitive Au Nanoparticle-Modified ZnO Nanorod Humidity Sensor22
Silicene/MoS2 Heterojunction for High-Performance Photodetector22
Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD22
Advancing Monolayer 2-D nMOS and pMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling22
Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance22
Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing22
Theoretical Study of Charge Carrier Lifetime and Recombination on the Performance of Eco-Friendly Perovskite Solar Cell22
Volatile and Nonvolatile Memory Operations Implemented in a Pt/HfO₂/Ti Memristor22
Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length22
An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor22
Evolution of Image Sensor Architectures With Stacked Device Technologies22
Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension22
Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode22
Matrix-Addressed Flexible Capacitive Pressure Sensor With Suppressed Crosstalk for Artificial Electronic Skin22
On DRAM Rowhammer and the Physics of Insecurity22
High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration22
ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping21
Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications21
Acceleration of Semiconductor Device Simulation With Approximate Solutions Predicted by Trained Neural Networks21
Heat Dissipation Enhancement of Phosphor-Converted White Laser Diodes by Thermally Self-Managing Phosphor-in-Glass21
Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics21
Study of a Platinum (Pt) Nanoparticle (NP)/Vanadium Pentoxide (V2O5) Thin Film-Based Ammonia Gas Sensor21
Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling21
Study on 1-THz Sine Waveguide Traveling-Wave Tube21
Resistivity Size Effect in Epitaxial Rh(001) and Rh(111) Layers21
MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor21
BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polariza21
A Physical Model for Bulk Gate Insulator Trap Generation During Bias-Temperature Stress in Differently Processed p-Channel FETs21
Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors21
Compact Single-Phase-Search Multistate Content-Addressable Memory Design Using One FeFET/Cell21
Effect of Aluminum Doping on Performance of HfO-Based Flexible Resistive Memory Devices21
Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition21
The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System21
Bridging TCAD and AI: Its Application to Semiconductor Design21
Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process21
Output-Power Enhancement of Vircator Based on Second Virtual Cathode Formed by Wall Charge on a Dielectric Reflector21
Highly Sensitive, Wide-Range, and Flexible Pressure Sensor Based on Honeycomb-Like Graphene Network21
Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory21
Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications20
Logic Device Based on Skyrmion Annihilation20
Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics20
Amplified Methanol Sensitivity in Reduced Graphene Oxide FET Using Appropriate Gate Electrostatic20
Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack20
Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current20
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing20
Impact of Nonuniform Thermionic Emission on the Transition Behavior Between Temperature-and Space-Charge-Limited Emission20
A New Analog PWM Pixel Circuit With Metal Oxide TFTs for Micro-LED Displays20
An Ultracompact Switching-Voltage-Based Fully Reconfigurable RRAM PUF With Low Native Instability20
Deep Learning-Based BSIM-CMG Parameter Extraction for 10-nm FinFET20
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G, V D} Bias Space: Implications and Peculiarities20
Electron-Optic System With a Converged Sheet Electron Beam for a 0.2-THz Traveling-Wave Tube20
Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates20
Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors20
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O320
Temporal Electron-Spin Splitter Based on a Semiconductor Microstructure Constructed on Surface of InAs/AlxIn1-x As Heterostructure by Patterning a Ferromagnetic Stripe and a Scho20
Characterization and Extraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module20
Low Subthreshold Swing and High Performance of Ultrathin PEALD InGaZnO Thin-Film Transistors20
Fabrication of Binder-Free TiO2 Nanofiber Electrodes via Electrophoretic Deposition for Low-Power Electronic Applications20
Flexible Printed Circuit Board as Novel Electrodes for Acoustofluidic Devices20
Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode20
Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3Deep-Ultraviolet Photodetector20
Effect of Program Error in Memristive Neural Network With Weight Quantization20
Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications20
Thermal Brownian Motion of Skyrmion for True Random Number Generation20
High Performance Flexible Transistors With Polyelectrolyte/Polymer Bilayer Dielectric19
Efficient and Robust Spike-Driven Deep Convolutional Neural Networks Based on NOR Flash Computing Array19
Low Temperature SoIC Bonding and Stacking Technology for 12-/16-Hi High Bandwidth Memory (HBM)19
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube19
Scalable mmWave Non-Volatile Phase Change GeTe-Based Compact Monolithically Integrated Wideband Digital Switched Attenuator19
Energy-Efficient All-Spin BNN Using Voltage-Controlled Spin-Orbit Torque Device for Digit Recognition19
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