IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 7. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-07-01 to 2025-07-01.)
ArticleCitations
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops110
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs109
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors91
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs86
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform84
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors82
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress78
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator77
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors75
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron63
Changes in the Editorial Board62
IEEE Transactions on Electron Devices publication information61
2021 EDS Education Award call for nominations59
IEEE Transactions on Electron Devices information for authors56
Accurate and Efficient Algorithm for Computing Structure Functions From the Spatial Distribution of Thermal Properties in Electronic Devices54
Compensating Nonuniform OLED Pixel Brightness in a Vertical Blanking Interval by Learning TFT Characteristics54
Design of Novel InP/InGaAs Photodetectors With NiO Transparent p-Region and Electrode53
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs51
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition51
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field51
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch50
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors50
Mitigation of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Through Use of Correction Frame50
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O349
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory49
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration48
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency47
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C47
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress46
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs46
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling46
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure46
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs45
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor45
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs45
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate44
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation43
Defect-Engineered Resistive Switching in van der Waal Metals43
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT43
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories43
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor43
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements43
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs43
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”42
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores42
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs42
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor42
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application42
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates41
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material41
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals40
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs40
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode40
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp39
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy39
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer39
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices39
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact38
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification38
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen38
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection37
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures37
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness37
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study37
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings37
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective37
Physical Compact Model for Source-Gated Transistors for DC Application36
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes36
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing36
Alpha Particle Detection Using Highly Rectifying Ni/Ga2O3/4H-SiC Heteroepitaxial MOS Junction35
Reliable and Efficient Phosphor-in-Glass-Based Chip-Scale Packaging for High-Power White LEDs35
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection35
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time35
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction35
Table of Contents35
Preferable Parametric Model for the Lifetime of the Organic Light-Emitting Diode Under Accelerated Current Stress Tests35
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization35
Sigmoid Probabilistic Bits Using SiO Threshold Switching Devices for Probabilistic Computing34
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals34
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation34
Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”34
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization34
Compact Modeling of Impact Ionization in High-Voltage Devices34
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector34
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication33
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors33
Implementing a Ternary Inverter Using Dual-Pocket Tunnel Field-Effect Transistors33
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry32
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing32
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs32
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S232
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation32
A Physics-Based Compact Model for Silicon Cold-Source Transistors32
Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs31
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi31
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO331
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET31
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors31
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory31
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence31
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode31
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing31
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells31
New Failure Mechanism Induced by Current Limit for Superjunction MOSFET Under Single-Pulse UIS Stress31
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs31
Differential Signal Acquisition Using TFT Light-Sensing Pixel Array31
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors31
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain30
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain30
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT30
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment30
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol30
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W30
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator30
Complementary Vacuum Field Emission Transistor30
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering30
Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature30
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell29
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory29
Reconfigurable MoTe2 Field-Effect Transistors and its Application in Compact CMOS Circuits29
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study29
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects29
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams28
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor28
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device28
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si28
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing28
Plasma Jet Printing: An Introduction28
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect28
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet28
IEEE Transactions on Electron Devices Publication Information28
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop28
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors28
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology28
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing28
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness28
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules28
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration28
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness28
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs27
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension27
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines27
IEEE ELECTRON DEVICES SOCIETY27
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs27
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format27
IEEE Transactions on Electron Devices Information for Authors27
TechRxiv: Share Your Preprint Research with the World!27
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂27
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET27
IEEE ELECTRON DEVICES SOCIETY27
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum27
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure26
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept26
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations26
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]26
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs26
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz26
IEEE Transactions on Electron Devices information for authors26
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations26
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application26
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier26
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs26
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit26
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture26
A Neuromorphic Brain Interface Based on RRAM Crossbar Arrays for High Throughput Real-Time Spike Sorting25
Thin Film Magnetic Core Microinductor With Stacked Windings25
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter25
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory25
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress25
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes25
Thermistor-Based Nematic Liquid Crystal IM95100-00025
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes25
A Novel Electron Gun Design Approach With an Externally Assembled Anode25
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration25
Self-Heating Mitigation of TreeFETs by Interbridges25
Online Junction Temperature Detection for IGBTs Using Voltage Rise Time25
Low-Power Ultradeep-Submicrometer Junctionless Carbon Nanotube Field-Effect Diode25
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer25
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution25
A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN25
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage25
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors25
Dielectrics for 2-D Electronics: From Device to Circuit Applications24
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor24
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor24
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences24
IEEE ELECTRON DEVICES SOCIETY24
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA24
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs24
IEEE Transactions on Electron Devices Information for Authors24
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether24
IEEE Transactions on Electron Devices Information for Authors24
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors24
Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit24
An Easy-to-Fabricate Circular TE₂₁/TE₀₁ Mode Generator24
1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination24
IEEE Transactions on Electron Devices Information for Authors24
Blank Page24
Solution-Driven HfLaOx-Based Gate Dielectrics for Thin Film Transistors and Unipolar Inverters23
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability23
Investigation of a Multibeam Magnetron Injection Gun for a W-Band Sectorial-Tunnel Gyro-TWT23
Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers23
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing23
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector23
Multiport Relativistic Magnetron for Phased Array Application23
Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation23
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit23
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode23
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method23
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate23
Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients23
Impact of Nonuniform Ozone Anneal Treatment on the Resistance Levels in an IGZO-ReRAM Fabricated on ITO-Coated Glass Substrate23
Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low R ON,sp23
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube23
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets23
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates22
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure22
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature22
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop22
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWT22
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs22
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases22
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications22
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs22
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface22
Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer22
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator22
Investigation of a Low-Loss Transmission Structure for W-Band TWT22
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector22
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design22
Control of Resistive Switching Endurance in TiO2/TiO2-x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation22
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor22
A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam22
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition22
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress22
Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses22
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs21
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O321
An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode21
A Capacitance Extraction Method Using Local Discontinuous Galerkin Method on Adaptive Triangular Meshes21
The ESD Behavior of D-Mode GaN MIS-HEMT21
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure21
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell21
Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application21
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors21
IEEE ELECTRON DEVICES SOCIETY21
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency21
Review of Quanta Image Sensors for Ultralow-Light Imaging21
Tandem Evaluation of AlN/β - and ε-Ga2O3 Tri-Gate MOSHEMTs21
Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling21
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