IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 7. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications92
TechRxiv: Share Your Preprint Research with the World!86
Table of Contents82
IEEE Transactions on Electron Devices Information for Authors80
Blank Page74
Sc₀.₁Al₀.₉N-Based Bimorph Piezoelectric MEMS Microphones With Tractive Structures73
IEEE Transactions on Electron Devices Information for Authors73
Theoretical and Experimental Investigations on Input Couplers for a G-Band Gyro-TWT72
Enhancing Broadband 4H-SiC Photodetectors With Gold Nanoparticles: Expanding Sensitivity From UV to SWIR Spectrum72
Semiconductor Device Modeling for Circuit and System Design70
Achieving Optimal Impact Ionization-Limited Breakdown Voltages in Scaled mm-Wave InP/GaInAsSb DHBTs66
Enabling High-Sensitivity Calorimetric Flow Sensor Using Vanadium Dioxide Phase-Change Material With Predictable Hysteretic Behavior58
Evaluation and Establishment of an Empirical Model for the Dynamic Ron Effect of GaN Power Device in Hard Switching Mode56
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing55
Design and Experiment of a Compact Circular Waveguide TM₀₁ to TE₀₁ Mode Converter53
Table of Contents53
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications52
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines51
Fast Electron Gun Design Methodology Based on Fitting the Beam-Edge Potential Profiles51
Achieving 1-nm-Scale Equivalent Oxide Thickness Top-Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors With CMOS-Friendly Approaches49
Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects49
Investigation of Bottom Gate Connection in Double-Gate a-IGZO TFTs for Optimizing Compensation Performance of AMOLED Displays47
Dual-Band Terahertz Harmonic Gyrotron Driven by Axis-Encircling Electron Beam47
The Implications of Collisions on the Spatial Profile of Electric Potential and the Space-Charge-Limited Current46
Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification46
High-Q Switchable BAW Resonators With 5-V Switching Voltages and Through GaN Vias45
Physical Compact Model for Source-Gated Transistors for DC Application45
From Mega to nano: Beyond one Century of Vacuum Electronics44
Materials, processing and integration for neuromorphic devices and in-memory computing44
Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short-Circuit Condition44
Plasma Jet Printing: An Introduction43
IEEE ELECTRON DEVICES SOCIETY43
Blank Page43
Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications42
An Accurate Drain Current Model of Multichannel Cylindrical High-K HfO2-/Si3N4-Based GAA-MOSFET for SRAM Application42
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings42
IEEE Transactions on Electron Devices information for authors42
Experimental Demonstration of Holey Silicon-Based Thermoelectric Cooling42
IEEE Transactions on Electron Devices information for authors41
Dielectrics for 2D electronics41
Introducing IEEE Collabratec41
New Erratic Program Disturbance Mechanism of 2T-SONOS Embedded Nonvolatile Memory41
Table of Contents41
Awards Flyer41
IEEE ELECTRON DEVICES SOCIETY40
IEEE ELECTRON DEVICES SOCIETY39
State-Aware Multibit Write Algorithm for TiO x -Based Resistive Switching Memory Devices39
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp39
Table of contents39
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices39
IEEE ELECTRON DEVICES SOCIETY38
IEEE ELECTRON DEVICES SOCIETY38
TechRxiv: Share Your Preprint Research with the World!38
A Comparison of Analog Performance, Linearity, and Distortion Characteristics Between Symmetric InGaAs and Asymmetric InGaAs/InP MOSFETs38
Table of Contents38
IEEE Transactions on Electron Devices information for authors38
Semiconductor Device Modeling for Circuit and System Design37
Call for papers - From Mega to nano: Beyond one Century of Vacuum Electronics37
Special Issue on Production-Level Artificial Intelligence Applications in Semiconductor Manufacturing37
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation37
TechRxiv: Share Your Preprint Research with the World!37
TechRxiv: Share Your Preprint Research with the World!36
2021 IEEE EDS Early Career Award36
IEEE Transactions on Electron Devices information for authors36
IEEE Transactions on Electron Devices publication information36
IEEE Transactions on Electron Devices publication information36
Solid-State Image Sensors36
2021 EDS Education Award call for nominations36
Table of contents36
IEEE ELECTRON DEVICES SOCIETY35
IEEE Open Access Publishing35
IEEE Transactions on Electron Devices information for authors35
IEEE Transactions on Electron Devices information for authors35
IEEE Transactions on Electron Devices information for authors35
Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations34
Table of Contents34
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness34
A Compact Physical Drain Current Model of Multitube Carbon Nanotube Field Effect Transistor Including Diameter Dispersion Effects33
Probing the Scaling Effect on Electromigration and Segregation in Sn–58Bi Solder Interconnects Through Numerical Modeling33
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector33
Inelastic Electron Tunneling Spectroscopy: Investigation of Bulk Dielectrics and Molecules33
Reconfigurable MoTe2 Field-Effect Transistors and its Application in Compact CMOS Circuits33
The Trade-Off Between Microwave Frequency and Output Power in SiC Photoconductive Switches Based on Carrier Lifetime32
Boltzmann-Statistics-Aware Non-Quasi-Static-Charge Model for IC Simulations32
Subthreshold Swing Modeling Down to Cryogenic Temperatures for MOSFET Compact Models32
TechRxiv: Share Your Preprint Research with the World!32
Front Cover32
Interfacial Discharge Characteristics and Insulation Life Analysis of Package Insulation Under Square Voltage Coupled With High Frequency and Steep dv/dt32
Enhance Electrical Performance and Stability of InSnMgO Thin-Film Transistors by Optimizing Carrier Concentration via Mg Doping32
A Simple Method to Create Corners for the Lookup Table-Based MOSFET Models Through Inputs and Outputs Mapping32
Improvement of β-Ga2O3 MIS-SBD Interface Using Al-Reacted Interfacial Layer32
Table of Contents32
High-Efficient Memristor-Based Bayesian Convolutional Neural Networks for Out-of-Distribution Detection by Uncertainty Estimation31
Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe2P-Type Field-Effect Transistors31
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain31
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation31
Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling Effect31
Table of Contents31
Wide Bandwidth, High Power Radio Frequency Limiter Based on Lanthanum Cobalt Oxide on SiC31
Performance Investigation of Organic/Inorganic Bottom Cell on Lead-Free Cs3Sb2Br9 Based All-Perovskite Tandem Solar Cell31
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization31
Thickness-Dependent Study of High- Performance WS2-FETs With Ultrascaled Channel Lengths30
Energy Storage and Reuse in Negative Capacitance30
Synaptic Device With High Rectification Ratio Resistive Switching and Its Impact on Spiking Neural Network30
Special issue on Spintronics-Devices and Circuits30
Epitaxial Al-InAs Heterostructures as Platform for Josephson Junction Field-Effect Transistor Logic Devices30
On the Optimization of Performance and Reliability in a-InGaZnO Thin-Film Transistors by Versatile Light Shielding Design29
Gas Sensor Based on Semihydrogenated and Semifluorinated h-BN for SF₆ Decomposition Components Detection29
The Impact of Holding Voltage of Transient Voltage Suppressor (TVS) on Signal Integrity of Microelectronics System With CMOS ICs Under System-Level ESD and EFT/Burst Tests29
Theoretical Prediction of High-Performance Room-Temperature InGaAs/Si Single-Photon Avalanche Diode Fabricated by Semiconductor Interlayer Bonding29
Slit-Type Cavities for Cyclotron Resonance Masers Operating at TM Modes29
New Concerns on Heavy Ion Irradiation Induced Variation Degradation in Nanoscale CMOS Devices29
Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond29
Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm29
Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements29
Empirical Large-Signal Modeling of mm-Wave FDSOI CMOS Based on Angelov Model29
Mechanisms Underlying the Bidirectional V T Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs29
A New Pixel Circuit With Selectively Synchronized Dual-Gated IGZTO TFTs for AMOLED Displays29
Announcing the New Editor-in-Chief28
Low-Temperature Processed Ni/GeSn Optimal Contacts for Junctionless GeSn-on-Si FinFETs28
a-InGaZnO Thin-Film Transistors With Novel Atomic Layer-Deposited HfO2 Gate Insulator Using Two Types of Reactant Gases28
Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration28
Normally-off C-H Diamond FETs With Partial Al/C-O Diamond Junction Attaining Low off-State Current28
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors28
Spintronic Computing-in-Memory Architecture Based on Voltage-Controlled Spin–Orbit Torque Devices for Binary Neural Networks28
Multistate Capability Improvement of BEOL Compatible FeFET by Introducing an Al2O3 Interlayer28
Redundancy and Analog Slicing for Precise In-Memory Machine Learning—Part II: Applications and Benchmark28
Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure28
In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model28
A SiC IGBT Model With Accurate Static and Dynamic Tracking Capability28
Interactive Lattice and Process-Stress Responses in the Sub-7 nm Germanium-Based Three-Dimensional Transistor Architecture of FinFET and Nanowire GAAFET28
A Carbon Nanotube-Based Hundred Watt-Level Ka-Band Backward Wave Oscillator28
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension27
A Simple Edge Termination Design for Vertical GaN P-N Diodes27
New Insights Into Memory Window of Ferroelectric FET Impacted by Read Operations With Awareness of Polarization Switching Dynamics27
Ternary-State Vertical NAND Flash Memory for the Improvement of the Density and Accuracy of Quantized Neural Networks27
Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach27
Simulation and Characterization of the Modulation Transfer Function in Fully Delineated Type-II Superlattices Infrared Detectors27
Particle-in-Cell Simulations of Ten-Vane Microwave-Oven Free-Running 2.45-GHz “Cooker” Magnetron: Microwave Power Increase up to 6 kW in a Pulsed Mode (3 kW With 50% Duty Cycle)27
On the Ramifications of Geometrical Uncertainties Upon Performance Parameters of TWT27
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective27
Influence of Capping Layer on Threshold Voltage for HKMG FinFET With Short Channel27
Intermittent O2 Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors27
AlGaN-Based DUV LEDs With Al-Composition-Engineered AlGaN Superlattice Inserted at the p-EBL/Hole Supplier Interface27
Self-Powered Solar-Blind Photodetector With Low Dark Current and Ultrahigh On/Off Ratio Based on Vertically Aligned Si/SiC Nanowire Arrays p-n Heterojunction26
The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs26
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors26
Analytical Model of the Vertical Pinned Photodiode26
Hole Mobility Enhancement Mechanism of Wurtzite GaN/AlN Heterojunction Quantum Well Under Tensile and Compressive Stresses26
Single-Quantum Measurement With a Multiple-Amplifier Sensing Charge-Coupled Device26
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors26
A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB26
Enhancing ESD Performance of FinSCRs: Engineering Schemes to Address Current Localization and Failure Current Scalability26
Effect of Graphite as Electrodes on Electrical and Photoelectrical Behavior of Multilayer MoS2 and WS2 FETs26
Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations26
Stepped Identical Reset-Pulse and Lookup Table Programming of Multilevel Conductance in HfO x /AlO y 26
Effect of Donor–Acceptor Compensation on Transient Performance of Vanadium-Doped SiC Photoconductive Switches Using 532-nm Laser25
Preparation of High-Performance Phototransistors Combining Negative-Capacitance Effect of Gate Dielectric With WS2/MoS2 Heterojunction Channel25
Comprehensively Enhanced Performance of MISIM β-Ga₂O₃ Solar-Blind Photodetector Inserted With an Ultrathin Al₂O₃ Passivation Layer25
Metal-Rich Zn-Sn-O-N Channel-Based Thin Film Transistor Photodetectors25
Impact of Current on the Parallel Resistance and Junction Capacitance of Light-Emitting Diodes25
Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si)25
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs25
Investigation of Transient Two-Stage Thermal Equivalent RC Network of SOI-MOSFETs Using Nano Double-Pulse Measurement25
Monolithic Waveguide Group IV Multiple-Quantum-Well Photodetectors and Modulators on 300-mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit25
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron25
Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress25
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors24
A Novel Prediction Technology of Output Characteristics for IGBT Based on Compact Model and Artificial Neural Networks24
Improved Parasitic Capacitance-Predictively Aware DTCO: Enhanced Cell Efficiency With Manufacturability and Scalability for 4F2 VCT-Based DRAM24
Effect of Temperature Gradient on Particle Distribution of Phosphor Film During Curing24
Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance24
Deep Ultraviolet C Phototransistors Using Aluminum-Doped Gallium Hafnium Oxide Channel Layer24
Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification24
Improvement of Photovoltaic Performance and Long-Term Stability of CdSe/CdS Quantum Dot@N719 Dye-Sensitized Tandem Solar Cells24
Improved Performance of MoS2 Negative-Capacitance Transistors by Using Hf1-x Al x O 24
Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability24
Enhanced Stability of SiZTO TFT Under Positive Voltage and Light Negative Voltage Stress and Modified Hysteresis of the CNTs/SiZTO CMOS Inverter by Si Doping24
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs24
Analysis of Dielectric Prebreakdown of High-kStacking Polycrystalline MIM by Stochastic Trap-Clusters Growing and Percolation-Based Transportation24
Estimation of Zero-Field Activation Energy for Traps in Fe- and C-Doped GaN-Based HEMTs23
A Low-Voltage Operated Organic TFT-Based Inverter With Solution-Processed LiZnO x Dielectric23
New Power Clamp Circuit for Concurrent ESD and Surge Protections23
Ge Content Optimization in Ge(SbSe)N OTS Materials for Selector Applications 23
Effect of Dynamic Threshold-Voltage Instability on Dynamic ON-State Resistance in SiC MOSFETs23
Interconnect Design-Enabled Stretchable Interdigital Electrode Array for Curved Electronics23
Dual-Function Multichannel Acoustofluidic Particle Manipulation Enabled by a PMUT Array23
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors23
Parasitic Oscillation Analysis of Trench IGBT During Short-Circuit Type II Using TCAD-Based Signal Flow Graph Model23
Performance Evaluation of Monolayer ZrS3 Transistors for Next-Generation Computing23
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules23
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform23
A True Random Number Generator Based on Semiconductor-Vacancies Junction Entropy Source and Square Transform Method23
An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode23
Clamping Capability of Parasitic p-n Diode in SBD-Embedded SiC MOSFETs23
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node—Part I: Defect-Based Statistical Compact Model23
A Highly Overmoded Structure for Hundred-Kilowatt-Class Ka-Band Extended Interaction Klystron23
Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems23
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence23
Prediction of the ESD Failure Current Based on a New Method Using the Shot Noise Model22
Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures22
GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications22
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector22
A Low Conduction Loss IGBT With Hole Path and Temperature Sensing22
Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT22
Demonstration of an Al2O3 Bidirectional Selector With an Ultralarge Selectivity of 10922
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs22
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress22
Single-Electron-Precise Tailoring of a Resistive-Switching Device by Tuning Transfer Printing Parameters: A Computational Study22
Total Ionizing Dose Radiation Damage to the Schottky Contact Super Barrier Rectifier22
Inserted Al2O3 Barrier Layer for Improvement in Stability of Mini Light Emitting Diodes22
Study on the Degradation Mechanism of GaN MMIC Power Amplifiers Under On-State With High Drain Bias22
Harmonic Characteristics of the Multipactor for an Impedance Transformer22
Fast Algorithms for Exact IR Drop De-Embedding in Analog Multiply–Accumulate Computing22
Fully Flash-Based Reservoir Computing Network With Low Power and Rich States22
Unraveling the Dynamics of HfO2-Based NW-CTT as an Artificial Synapse21
Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors21
Degradation Mechanism of Normally-On AlGaN/GaN HEMTs Under Short- and Long-Term HTRB Stress21
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition21
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator21
Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs21
Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO x /Au Resistive Memory Devices21
Electrical Demonstration of Sn–S-Based OTS Materials From Theoretical Design for Sustainable Innovation21
Vertical-Channel Fin-SiC (VC Fin-SiC) With Partially Highly Doped JFET for 3.3-kV Applications21
High-Power Low-Divergence Single-Mode Multi-Junction Cascade VCSELs21
Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization21
Current Polarity Changeable Concentric MIS Tunnel Photodiode With Linear Photodetectivity via Inner Gate Biasing and Outer Ring Short-Circuit Operation21
Changes in the Editorial Board21
Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part I: Simulation Tools and Application to Sample Structures21
β-Ga2O3 Pseudo-CMOS Monolithic Inverters21
Ultraviolet Photodetector With Solution-Cast Magic-Sized PbS Clusters21
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs21
Anti-Ferroelectric ZrO2 Capacitors With Ultralow Operating Voltage (<1.2 V) and Improved Endurance Toward Logic Compatible eDRAM21
A Deep Cutoff Capacitance Model for GaN Switch HEMTs21
Analysis of TCC in p-n Short Silicon Diodes at 300–400 K21
Low-Temperature Processed Complementary Inverter With Tin-Based Transparent Oxide Semiconductors21
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment21
Analytical Study on a 700 V Triple RESURF LDMOS With a Variable High-K Dielectric Trench20
Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements20
Impact of Thermal Effects on the Performance of the Power Gating Circuits Using NEMS, FinFETs, and NWFETs20
A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design20
Differential Signal Acquisition Using TFT Light-Sensing Pixel Array20
Novel Rectangular-Ring Vertex Double-Bar Slow Wave Structure for High-Power High-Efficiency Traveling-Wave Tubes20
TCAD Analysis of O-Terminated Diamond m-i-p+ Diode Characteristics Dependencies on Surface States CNL and Metal-Induced Gap States20
Effects of Temperature and Structural Geometries on a Skyrmion Logic Gate20
Multifaceted Simulations Reproducing Experimental Results From the 1.5-MW 140-GHz Preprototype Gyrotron for W7-X20
CMOS Compatible MEMS Multienvironmental Sensor Chip for Human Thermal Comfort Measurement in Smart Buildings20
Planar Gradient-Meander Line Microwave Inductor and Designing a 10-MHz–67-GHz Stopband Inductor for Ultrawideband Applications20
Analytic Solutions for Space-Charge-Limited Current Density From a Sharp Tip20
Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors20
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