Journal of Crystal Growth

Papers
(The H4-Index of Journal of Crystal Growth is 22. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
Effect of linear antenna chemical vapor deposition process parameters on the growth of nanocrystalline diamond-on-GaN films54
Comparative study of crystallization of two fluorinated chiral liquid crystalline compounds differing by fluorosubstitution of the molecular core49
First principles study on electronic properties and mechanical stability of HfRhZ (Z = As and Sb) half Heusler alloys34
Nucleation control and separation of metacetamol polymorphs through swift cooling crystallization process33
Study of the effect of Mn:Bi ratio in the growth of MnBi2Te4 bulk crystals32
Crystal growth of Sr3BeB6O13 and its thermal and optical properties32
Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods27
Numerical simulation of thermal stress during the steady rotation in the growth of ADP crystals by solution circulating method26
Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells26
Editorial Board25
Low-Pressure MOVPE: The time of the pioneers25
Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method25
Editorial Board24
Editorial Board24
Editorial Board24
Review of machine learning applications for crystal growth research23
Biofabrication of silver nanoparticles using Artocarpus heterophyllus leaves extract: Characterization and evaluation of its antibacterial, antibiofilm, and antioxidant activities23
Editorial Board23
Effects of crystal growth rate and pressure on shape controllability in the dewetting micro-pulling-down method23
Conventional Czochralski growth of large Li2MoO4 single crystals22
Chemical vapour deposition of copper(I) iodide on c-plane sapphire using ethyl iodide and 2-iodo-2-methylpropane22
Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography22
Stress analysis and dislocation cluster generation in silicon crystal with artificial grain boundaries22
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