Microelectronics Journal

Papers
(The median citation count of Microelectronics Journal is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-06-01 to 2025-06-01.)
ArticleCitations
Performance prediction of random variable-width microfluidic chips by convolutional neural networks40
Editorial Board28
A high reliability physically unclonable function based on multiple tunable ring oscillator21
Photoluminescence and time resolved photoluminescence properties in as grown ZnO thin films prepared by DC reactive sputtering for optoelectronic devices21
Multi-dimensional accumulation gate LDMOS with ultra-low specific on-resistance19
A low complexity bit parallel polynomial basis systolic multiplier for general irreducible polynomials and trinomials19
Versatile DAC-less successive approximation ADC architecture for medium speed data acquisition17
A 57–100 ​GHz 0.13 ​μm SiGe power amplifier with high output power and efficiency15
Editorial Board15
A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices14
4H–SiC floating junction Schottky barrier diode with compensation layer of engineered cathode structure: Cone-shaped electric field, current density waveform, and applications14
Editorial Board13
Editorial Board12
Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design12
Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate11
Electromagnetic modelling and analysis of RF MEMS capacitive shunt switch for 5G applications11
A 12bit 250 MS/s 5.43fJ/conversion-step SAR ADC with adaptive asynchronous logic in 28 nm CMOS10
Capacitance response of concave well substrate touch-mode capacitive pressure sensor: Mathematical analysis and simulation10
Editorial Board9
Editorial Board9
A 8–12 GHz power amplifier with high out-of-band rejection8
A digital calibration technique for N-channel time-interleaved ADC based on simulated annealing algorithm8
Editorial Board7
A communication-aware and predictive list scheduling algorithm for network-on-chip based heterogeneous muti-processor system-on-chip7
Stability of single-stage single-bit ∑Δ modulator7
Impact of thermal baking before radiation on the total dose response of bipolar device6
Editorial Board6
A piecewise temperature-curvature compensation bandgap with internal chopper stabilized amplifiers6
Editorial Board6
Editorial Board5
The Characterization of Errors in an FPGA-Based RISC-V Processor due to Single Event Transients5
Editorial Board5
Efficient self-powered piezoelectric energy harvesting interface circuit with wide rectified voltage5
Editorial Board5
Design and performance assessment of a vertical feedback FET4
Wide-band compact floating memristor emulator configuration with electronic/resistive adjustability4
Editorial Board4
A capacitively coupled digital isolator with CMTI of 160 kV/μs and data rate of 230 Mbps4
MEJ scope 20214
Editorial Board4
A BJT-based temperature sensor using two sub-OPAMPs Chopper ripple reduction technique with inaccuracy of ±0.25 °C (3σ) from −45 °C to 85 °C4
A Hertzian contact based model to estimate thermal resistance of thermal interface material for high-performance microprocessors4
Differential high gain transimpedance amplifier with –3dB-bandwidth extension4
Editorial Board4
New pull-in voltage modelling of step structure RF MEMS switch4
Editorial Board3
Design of area-efficient modified decoder-based imprecise multiplier for error-resilient applications3
Editorial Board3
Exact and approximate multiplications for signal processing applications3
Editorial Board3
On the design of p-channel step-FinFET at sub-10nm node: A parametric analysis3
A 10-GHz Inductorless Modified Regulated Cascode Transimpedance Amplifier for Optical Fiber Communication3
Impact of temperature and interface trapped charges variation on the Analog/RF and linearity of vertically extended drain double gate Si0.5Ge0.5 source tunnel FET3
RF/Analog performance of GaAs Multi-Fin FinFET with stress effect3
Impact of self-heating on thermal noise in In1−xGaxAs GAA MOSFETs3
Efficient full data-path width and serialized hardware structures of SPONGENT lightweight hash function2
Design of M-tree Adder using majority logic for removal of artifacts in bio signal2
A 20–200 mV, 92.52% peak efficiency, dual-mode boost converter with inductor peak-current-controlled and efficient ZCS for thermoelectric energy harvesting in bioimplantable devices2
Miller compensated four-stage OTA with Q-reduction for wide range of load capacitors2
Editorial Board2
A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications2
A non-time division multiplexing single inductor solar and piezoelectric energy multi-input harvesting interface circuit2
Automated coplanarity inspection of BGA solder balls by structured light2
X-parameter modeling investigation for microwave power devices2
Editorial Board1
Design of energy efficient approximate subtractors and restoring dividers for error tolerant applications1
Frequency-scaled thermal-aware test scheduling for 3D ICs using machine learning based temperature estimation1
Steep-subthreshold slope dual gate negative capacitance junction less FET with dead channel: TCAD approach for digital/ RF applications1
CharTM: The dynamic stability characterization for memory based on tail distribution modeling1
Editorial Board1
Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits1
Editorial Board1
Editorial Board1
Study of ambipolar and linearity behavior of the misaligned double gate-drain dopant-free Nano-TFET: Design and performance enhancement1
Editorial Board1
A 12-bit 10 MS/s SAR ADC using the extended C–2C capacitor array1
An offset and gain error calibration method in high-precision SAR ADCs1
Improvement in the electrical properties of a-IGZO TFTs by using PA-PI as a modification layer1
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