Microelectronics Reliability

Papers
(The H4-Index of Microelectronics Reliability is 23. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-08-01 to 2025-08-01.)
ArticleCitations
Soft sensor design for estimation of thermal behavior of encapsulating materials in power electronic module83
Reliability assessment of miniaturised electromechanical RF relays for space applications78
Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation43
Highly reliable Cu Cu low temperature bonding using SAC305 solder with rGO interlayer34
Effect of high-temperature storage on the thermal conductivity of Cu nanoparticles/Bi-Sn hybrid bonding33
Editorial Board32
Editorial Board32
Failure analysis on capacitor failures using simple circuit edit passive voltage contrast method30
Breakdown voltage and TDDB performance improvement by optimizing the PECVD dielectric film characteristics in MIM capacitors30
Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study27
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation26
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress26
DNN-based error level prediction for reducing read latency in 3D NAND flash memory25
Design optimization of a packaged thermoelectric generator for electrically active implants24
Optical characterizations of “P-down” bonded InP pump lasers24
New reliability model for power SiC MOSFET technologies under static and dynamic gate stress23
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching23
Microstructure evolution and mechanical behavior of copper through‑silicon via structure under thermal cyclic loading23
Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test23
Investigation of microstructure, thermal properties, and mechanical performances of Ni-added Sn-5.0Sb-0.5Cu/Cu solder joints23
Quantitative analysis of void initiation in thermo-mechanical fatigue of polycrystalline copper films23
Calibration methods and power cycling of double-side cooled SiC MOSFET power modules23
Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides23
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