Microelectronics Reliability

Papers
(The H4-Index of Microelectronics Reliability is 21. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-06-01 to 2025-06-01.)
ArticleCitations
Soft sensor design for estimation of thermal behavior of encapsulating materials in power electronic module78
A programmable checker for automated 2.5D/3D IC latch-up verification and hot junctions detection77
Reliability assessment of miniaturised electromechanical RF relays for space applications63
Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation40
Highly reliable Cu Cu low temperature bonding using SAC305 solder with rGO interlayer33
Editorial Board31
Effect of high-temperature storage on the thermal conductivity of Cu nanoparticles/Bi-Sn hybrid bonding31
Editorial Board30
Failure analysis on capacitor failures using simple circuit edit passive voltage contrast method28
Breakdown voltage and TDDB performance improvement by optimizing the PECVD dielectric film characteristics in MIM capacitors27
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation26
Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study26
Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides24
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress23
Investigation of microstructure, thermal properties, and mechanical performances of Ni-added Sn-5.0Sb-0.5Cu/Cu solder joints23
DNN-based error level prediction for reducing read latency in 3D NAND flash memory23
Optical characterizations of “P-down” bonded InP pump lasers22
High temperature reliability of pressureless sintered Cu joints for power SiC die attachment22
Calibration methods and power cycling of double-side cooled SiC MOSFET power modules22
Quantitative analysis of void initiation in thermo-mechanical fatigue of polycrystalline copper films22
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching22
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions21
Correlative multimodal imaging and targeted lasering for automated high-precision IC decapsulation21
Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test21
The characterization of low-k thin films and their fracture analysis in a WLCSP device21
A Π-shaped p-GaN HEMT for reliable enhancement mode operation21
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation21
0.048331022262573