Microelectronics Reliability

Papers
(The H4-Index of Microelectronics Reliability is 22. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study58
Interface traps in the sub-3 nm technology node: A comprehensive analysis and benchmarking of negative capacitance FinFET and nanosheet FETs - A reliability perspective from device to circuit level40
Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test40
Editorial Board39
Editorial Board32
Correlative multimodal imaging and targeted lasering for automated high-precision IC decapsulation31
Reliability assessment of miniaturised electromechanical RF relays for space applications31
New reliability model for power SiC MOSFET technologies under static and dynamic gate stress30
Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation29
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress28
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation27
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions27
High temperature reliability of pressureless sintered Cu joints for power SiC die attachment26
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation26
Elucidating the large variation in ion diffusivity of microelectronic packaging materials26
Effect of solder junction void variation in power semiconductor package on power cycle lifetime26
Multistate time lag dynamic Bayesian networks model for reliability prediction of smart meters26
Current balancing of parallel-connected silicon carbide (SiC) MOSFET power devices using peak detection via PCB sensors24
Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides24
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching23
A physics-based electromigration model for advanced interconnects23
Highly reliable Cu Cu low temperature bonding using SAC305 solder with rGO interlayer23
Evaluating switch lifetime in soft-switched single-stage differential-mode SST22
DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: A simulation study22
A Π-shaped p-GaN HEMT for reliable enhancement mode operation22
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