Microelectronics Reliability

Papers
(The H4-Index of Microelectronics Reliability is 21. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Investigation of ESD protection devices for SiC-based monolithic integrated circuits74
Interface trap charge modeling of surrounding gate-engineered tubular channel junctionless MOSFET exploring temperature induced variations72
Analyzing the electrical response of Au-GaAs Schottky diodes to proton irradiation at room temperature61
Multistate time lag dynamic Bayesian networks model for reliability prediction of smart meters60
Semi-empirical law for fatigue resistance of redistribution layers in chip-scale packages33
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching29
Solving bump bonding issues with 2.0 mil copper wire: A study on FSM integration and workability improvements27
Assessment of the solidification behavior and microhardness of Sb-modified Sn-Ag alloys26
FEM-based development of novel 3D-printable plastic direct coolers for power semiconductor modules26
Failure analysis and simulation of IGBT under active and passive thermal cycling26
Total ionizing dose and single event effect response of 22 nm ultra-thin body and buried oxide fully depleted silicon-on-insulator technology24
Degradation modeling of InGaAs/InP avalanche photodiodes using calibrated technology computer-aided design24
A method to improve the accuracy and efficiency for metallized-film capacitor's reliability assessment using joint simulation24
Numerical evaluation of radiation degradation for P-MOSFET power devices under total ionizing dose effect24
Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress24
Impact of interface trap charges on electrical performance characteristics of a source pocket engineered Ge/Si heterojunction vertical TFET with HfO2/Al2O3 laterally stacked gate oxide23
A remaining useful life prediction method of aluminum electrolytic capacitor based on wiener process and similarity measurement23
Effects of rare earth Ce addition on the microstructure and shear property of Cu/In-50Ag/Cu composite solder joint23
Interdiffusion and formation of intermetallic compounds in high-temperature power electronics substrate joints fabricated by transient liquid phase bonding23
Calibration methods and power cycling of double-side cooled SiC MOSFET power modules21
A degradation model for separable electrical contacts based on the failure caused by surface oxide film21
Expedient validation of LED reliability with anomaly detection through multi-output Gaussian process regression21
In-situ temperature-dependent characterization of copper through glass via (TGV)21
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