OOIR: Observatory of International Research

Papers

(The H4-Index of Microelectronics Reliability is 25. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)

Article	Citations
Elucidating the large variation in ion diffusivity of microelectronic packaging materials	48
Multistate time lag dynamic Bayesian networks model for reliability prediction of smart meters	48
Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides	47
Reliability assessment of miniaturised electromechanical RF relays for space applications	37
Correlative multimodal imaging and targeted lasering for automated high-precision IC decapsulation	36
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress	35
New reliability model for power SiC MOSFET technologies under static and dynamic gate stress	35
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation	34
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching	34
Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation	33
Editorial Board	32
The characterization of low-k thin films and their fracture analysis in a WLCSP device	31
Failure analysis on capacitor failures using simple circuit edit passive voltage contrast method	31
Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study	31
A remaining useful life prediction method of aluminum electrolytic capacitor based on wiener process and similarity measurement	30
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions	29
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation	28
Breakdown voltage and TDDB performance improvement by optimizing the PECVD dielectric film characteristics in MIM capacitors	28
Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test	27
DNN-based error level prediction for reducing read latency in 3D NAND flash memory	27
Effect of microstructural variability on fatigue simulations of solder joints	26
Design optimization of a packaged thermoelectric generator for electrically active implants	26
Simulation assessment of solder joint reliability for fully assembled printed circuit boards	26
Modeling of the impact of mechanical stress resulted from wafer probing and wire bonding on circuit under pad	26
Impacts and mitigation strategies of process-induced packaging defects for enhancing reliability of power devices	25

Thermal reliability of 2D materials integrated with silicon-based CMOS ICs and analysis under complex conditions	25
Influence of cooling conditions on the estimated power cycling lifetime of a large-area substrate solder joint in power modules	25