OOIR: Observatory of International Research

Papers

(The H4-Index of Microelectronics Reliability is 26. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)

Article	Citations
Multistate time lag dynamic Bayesian networks model for reliability prediction of smart meters	63
Elucidating the large variation in ion diffusivity of microelectronic packaging materials	52
Reliability assessment of miniaturised electromechanical RF relays for space applications	50
New reliability model for power SiC MOSFET technologies under static and dynamic gate stress	41
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress	40
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation	39
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching	38
Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation	37
Editorial Board	36
Failure analysis on capacitor failures using simple circuit edit passive voltage contrast method	34
Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study	33
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation	32
Theoretical investigation of NBTI in P-LDMOS transistors using the four-state NMP model	32
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions	32
Modeling of the impact of mechanical stress resulted from wafer probing and wire bonding on circuit under pad	31
Design optimization of a packaged thermoelectric generator for electrically active implants	31
Effect of solder junction void variation in power semiconductor package on power cycle lifetime	29
Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides	29
Breakdown voltage and TDDB performance improvement by optimizing the PECVD dielectric film characteristics in MIM capacitors	29
Influence of cooling conditions on the estimated power cycling lifetime of a large-area substrate solder joint in power modules	29
Current balancing of parallel-connected silicon carbide (SiC) MOSFET power devices using peak detection via PCB sensors	29
Impacts and mitigation strategies of process-induced packaging defects for enhancing reliability of power devices	29
Calibration methods and power cycling of double-side cooled SiC MOSFET power modules	28
Evaluating switch lifetime in soft-switched single-stage differential-mode SST	28
A physics-based electromigration model for advanced interconnects	27

High temperature reliability of pressureless sintered Cu joints for power SiC die attachment	27
Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test	26
Effect of microstructural variability on fatigue simulations of solder joints	26