Solid-State Electronics

Papers
(The median citation count of Solid-State Electronics is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Analog behavior of V-FET operating in forward and reverse mode51
Investigation on holding voltage of asymmetric DDSCR with floating heavy doping in 0.18 μm CMOS process39
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region39
Analog resistive switching behavior in BiCoO3 thin film25
A generalizable, uncertainty-aware neural network potential for GeSbTe with Monte Carlo dropout20
Tailoring the optoelectronic properties of PZT through the modulation of the thin film20
Perovskite-based optoelectronic artificial synaptic thin-film transistor19
Threshold voltage in FD-SOI MOSFETs18
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing18
Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model18
Reconfigurable field effect transistors: A technology enablers perspective18
Small signal model and analog performance analysis of negative capacitance FETs17
Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors17
Editorial Board16
Influence of sub-band gap density of states on the electrical performance of amorphous SiZnSnO thin film transistor15
Negative capacitance enables GAA scaling VDD to 0.5 V15
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier15
Modeling current and voltage peaks generation in complementary resistive switching devices15
Removing crosstalk effect for high efficient polymer light emitting diode display14
Editorial Board13
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content12
Phonon-assisted transport in van der Waals heterostructure tunnel devices12
Editorial Board12
In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors12
THz gain compression in nanoscale FinFETs12
Structural properties of Ge-Sb-Te alloys12
A novel ferroelectric nanopillar multi-level cell memory11
A generalizable TCAD framework for silicon FinFET spin qubit devices with electrical control11
Modeling of SiC transistor with counter-doped channel11
Editorial Board10
Editorial Board10
Editorial Board10
Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device10
TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic10
Electron conduction mechanisms in magnetic tunnel junctions fabricated using amorphous Si-Zn-Sn-O as a low-resistive semiconducting barrier10
Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor10
3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology10
Editorial Board10
Compact I-V model for back-gated and double-gated TMD FETs9
Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs9
Editorial Board9
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance9
Undoped junctionless EZ-FET: Model and measurements9
Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon9
Electrical characterization of SOI pMOS device leakage9
Massively parallel FDTD-FBMC simulations of nonlinear hole dynamics in silicon at cryogenic temperatures driven by intense EM THz pulses9
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures9
Editorial Board9
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors8
Editorial Board8
Editorial Board8
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation8
Spiro-OMeTAD Anchoring perovskite for gradual homojunction in stable perovskite solar cells8
Influence of substrate temperature on the electrical and photovoltaic properties of V2O5 modified n-Ge heterojunction8
Custom measurement system for memristor characterisation8
Thin-film transistor accumulation-mode modeling8
A sub-30 GHz differential-frequency tripler in 22-nm FDSOI technology for FMCW spectrum8
III-V-on-Si transistor technologies: Performance boosters and integration8
SPICE compatible semi-empirical compact model for ferroelectric hysteresis8
Smart-CX – Method of extraction of parasitic capacitances in ICs8
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor8
Simplified EKV model parameter extraction in polysilicon MOSFETs8
Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer8
Temperature optimization for AlGaN/GaN HEMT with the etched AlGaN layer based on 2-D thermal model8
Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering8
Assessment of a universal logic gate and a full adder circuit based on CMOS-memristor technology8
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices8
Editorial Board7
An enzymatic glucose biosensor using the BESOI MOSFET7
Frequency doubler based on unipolar thin-film-transistor technologies7
Reliability studies on bipolar transistors under different particles radiation7
Revisited parasitic bipolar effect in FDSOI MOSFETs: Mechanism, gain extraction and circuit applications7
Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 °C7
Fabrication and characterization of GaN HEMTs grown on SiC substrates with different orientations7
Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell7
Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET)7
Surface-potential-based drain current model for two-dimensional organic TFTs using the multiple trapping and release conduction theory7
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length7
A differential OTP memory based highly unique and reliable PUF at 180 nm technology node7
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation7
Improved self-heating extraction with RF technique at cryogenic temperatures7
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance7
Study on electrical performance of AlGaN/GaN high electron mobility transistor based on cap layer design7
Non-local transport effects in semiconductors under low-field conditions7
Analysis on effect of hot-carrier-induced degradation of NPT-IGBT7
Pragmatic Z2-FET compact model including DC and 1T-DRAM memory operation7
An integrate-and-fire neuron with capacitive trans-impedance amplifier for improving linearity in Spiking Neural Networks7
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator7
SPICE modeling of cycle-to-cycle variability in RRAM devices7
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design6
Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs6
Strong efficiency enhancement of organic light-emitting devices using pin type structures6
Fully vacuum-free large-area organic solar cell fabrication from polymer top electrode6
Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination6
Modeling optical second harmonic generation for oxide/semiconductor interface characterization6
Interface effects in ultra-scaled MRAM cells6
Modeling thermal effects in STT-MRAM6
Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures6
Enhancing the temporal response of modified porous silicon-based CO gas sensor6
Low-temperature deuterium annealing to improve performance and reliability in a MOSFET6
Two-pulse switching scheme and reinforcement learning for energy efficient SOT-MRAM simulations6
Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT)6
Impact of passivation layer on the subthreshold behavior of p-type CuO accumulation-mode thin-film transistors6
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects6
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme6
Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations6
Experimental study of thermal coupling effects in FD-SOI MOSFET6
Strategies for ultra-fast bit generation of two-terminal threshold switch-based true random number generator using drift-free Ge-doped SiO2 threshold switch device6
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices6
Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopants6
Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation6
TCAD simulations of FDSOI devices down to deep cryogenic temperature5
A novel dual-directional DTSCR in twin-well process for ultra-low-voltage ESD protection5
Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs5
Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures5
Implantation-free SiC thyristor with single-mask 3D termination near 10 kV5
About electron transport and spin control in semiconductor devices5
An accurate circuit model of Ge/Si single photon avalanche diode5
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping5
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function5
Silicon photonics for terabit/s communication in data centers and exascale computers5
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors5
Comparative analysis of capacitorless DRAM performance according to stacked junctionless gate-all-around structures5
Corrigendum to “TCAD simulations of FDSOI devices down to deep cryogenic temperature” [Solid-State Electron. 194 (2022) 108319]5
Charge dynamics of amino acids fingerprints and the effect of density on FinFET-based Electrolyte-gated sensor5
Simulation of BioGFET sensors using TCAD5
SOS pseudo-FeFETs after furnace or rapid annealings and thining by thermal oxidation5
Sputter-Deposited copper iodide thin film transistors with low Operating voltage5
Determination of source series resistances for InP HEMT under normal bias condition5
Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects5
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach5
Superiority of core–shell junctionless FETs5
Deep learning-based I-V Global Parameter Extraction for BSIM-CMG5
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]5
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact5
Analysis of the mobility behavior of MOS2 2D FETs5
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier5
An atomistic modeling framework for valence change memory cells5
Improvement of power consumption and linearity of integrate/fire characteristics using diffusive memristors with defective graphene for artificial neuron application5
A simulation physics-guided neural network for predicting semiconductor structure with few experimental data5
Si nanowire-based micro-capacitors fabricated with metal assisted chemical etching for integrated energy storage applications5
A physics-based compact model of thermal resistance in RRAMs5
A planar core-shell junctionless transistor compatible with FD-SOI Technology5
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current5
Analytical model based estimation of line edge roughness induced V<4
Impact of JFET width on conduction characteristic for p-channel SiC IGBT4
GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates4
Investigation on MOS shunt LVTSCR for ESD application4
Effect of SOI substrate on silicon nitride resistance switching using MIS structure4
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures4
Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm4
Room temperature asymmetric negative differential resistance characteristics of AlGaN/GaN resonant tunneling diodes grown by metal-organic chemical vapor deposition4
Metal-organic framework (MOF)/reduced graphene oxide (rGO) composite for high performance CO sensor4
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions4
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon4
Piezoelectric microsensor for selective detection of low concentrations of ammonia4
Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures4
Comparative analysis of NBTI modeling frameworks BAT and Comphy4
Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors4
Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire4
Technology and design study of 3D physics-based inductor on FDSOI in GHz-range4
Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition4
Analog performance of GaN/AlGaN high-electron-mobility transistors4
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor4
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices4
Fabrication of transparent ZnO/Cu-Mg(OH)2 heterojunction diodes by electrochemical deposition4
DFT-based layered dielectric model of few-layer MoS24
Simulation and experimental Demonstration on A retrograde drift LDMOS4
Editorial Board4
Exploitation of OTFTs variability for PUFs implementation and impact of aging4
A unified explicit charge-based capacitance model for metal oxide thin-film transistors4
Fabrication and modelling of MInM diodes with low turn-on voltage4
Si bilayer tunnel field-effect transistor structure realized using tilted ion-implantation technique4
Ab initio study of electron mobility in V24
Efficient atomistic simulations of lateral heterostructure devices with metal contacts4
High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications4
An estimation of 2DEG density for GaN HEMT using analytical equation considering the charge conservation low4
Efficient planar mixed-cation perovskite photovoltaics with low-temperature-processed indium sulfide as electron transport material4
Automatic grid refinement for thin material layer etching in process TCAD simulations4
C-V characterization of the trap-rich layer in a novel Double-BOX structure4
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications4
An ultra low power spiking neural encoder of microwave signals4
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors4
Design of RRAM with high storage capacity and high reliability for IoT applications4
Transfer modeling of 1T1R crossbar arrays with line resistances based on matrix algebra method4
Design of auto-store circuit for nvSRAM with SONOS access transistor4
Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs4
Revealing switching statistics and artificial synaptic properties of Bi2S3 memristor4
Impact of substrate resistivity on spiral inductors at mm-wave frequencies4
A silicon controlled rectifier with an anode Schottky contact4
Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure4
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices4
An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges4
Coupling a phase field model with an electro-thermal solver to simulate PCM intermediate resistance states for neuromorphic computing4
Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K4
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS4
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM4
Comprehensive evaluation of torques in ultra-scaled MRAM devices4
Ultrafast self-powered phototransistor based on Te-WSe2 van der Waals heterojunction4
Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes4
Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime4
DTCO flow for air spacer generation and its impact on power and performance at N74
Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology4
Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection4
Improved responsivity and detectivity of LPE HgCdTe short-wavelength infrared photodetector by tuning the composition gradient4
Hierarchical simulation of nanosheet field effect transistor: NESS flow3
Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint3
Preconditioning of Ohmic p-GaN power HEMT for reproducible V measurements3
A multi-energy level agnostic simulation approach to defect generation3
Novel Y-function methodology parameter estimation from weak to strong inversion operation3
Editorial Board3
Detailed comparison of threshold voltage extraction methods in FD-SOI MOSFETs3
Shallow electron traps in high-k insulating oxides3
Cycle-to-cycle variability analysis of Ti/Al2O3-based memristors3
Synthesis of α-Fe2O3 nanorod for sensitive and selective detection of the n-butanol3
Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC3
A unified core model of double-gate and surrounding-gate MOSFETs for circuit simulation3
Editorial Board3
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs3
A novel substrate Voltage-assisted RESURF technique in SOI LDMOS with a heavily doped drift region3
Synaptic transistors based on transparent oxide for neural image recognition3
Temperature-dependent performance of Schottky-Barrier FET ultra-low-power diode3
A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination3
Analysis and modeling of anomalous flicker noise in long channel halo MOSFETs3
Strong quantization of current-carrying electron states in δ-layer s3
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients3
Dispersed and spherically assembled porous NiO nanosheets for low concentration ammonia gas sensing applications3
The Study of Hot Carrier Effects on Double SOI NMOSFETs3
A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode3
Characterization of the defect density states in MoOx for c-Si solar cell applications3
Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology3
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films3
ANN-based framework for modeling process induced variation using BSIM-CMG unified model3
Barrier height tuning in Ti/4H-SiC Schottky diodes3
Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height3
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing3
Enhanced resistive switching performance in TiN/AlO /Pt RRAM by high-temperature I-V cycling3
Editorial Board3
Gold nanoparticles in P3HT: PCBM active layer: A simulation of new organic solar cell designs3
Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers3
Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement3
Editorial Board3
Schottky barrier diode consisting of van der Waals heterojunction of MoS2 film and PtCoO2 contact3
Study of gate current in advanced MOS architectures3
Forward leakage currents in GaN p-i-n diodes3
Proposed package type for evaluating reliability of HBM Memory3
3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors3
A novel methodology for neural compact modeling based on knowledge transfer3
Editorial Board3
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures3
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