Solid-State Electronics

Article	Citations
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function	65
An enzymatic glucose biosensor using the BESOI MOSFET	49
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier	26
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length	24
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation	23
Si nanowire-based micro-capacitors fabricated with metal assisted chemical etching for integrated energy storage applications	22
Non-local transport effects in semiconductors under low-field conditions	21
Smart-CX – Method of extraction of parasitic capacitances in ICs	20
Low power consumption of non-volatile memory device by tunneling process engineering	19
Editorial Board	19
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors	19
Tailoring the optoelectronic properties of PZT through the modulation of the thin film	19
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content	18
Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer	18
Editorial Board	18
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact	17
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier	16
Analog behavior of V-FET operating in forward and reverse mode	16
Experimental study of thermal coupling effects in FD-SOI MOSFET	14
Compact I-V model for back-gated and double-gated TMD FETs	14
Robustness of using degree of match in performing analog multiplication with spin-torque oscillators	13
Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering	13
Editorial Board	13
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS12
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor	12

Analysis of a Hall-Corbino disk plate having a point current source at the center	12
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors	12
Analytical model based estimation of line edge roughness induced V<	12
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures	12
An ultra low power spiking neural encoder of microwave signals	12
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing	12
Novel Y-function methodology parameter estimation from weak to strong inversion operation	12
An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges	11
Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations	11
Ab initio study of electron mobility in V2	11
Impact of substrate resistivity on spiral inductors at mm-wave frequencies	11
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients	11
Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model	11
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach	11
Spatially resolved ionization current measurements using an active-matrix transimpedance amplifier array	11
Detailed low frequency noise assessment on GAA NW n-channel FETs	11
28 nm FD-SOI MEOL parasitic capacitance segmentation using electrical testing and semiconductor process modeling	10
Pragmatic OxRAM compact model ready to use for design studies	10
Editorial Board	10
3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors	10
A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime	10
TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET	10
Editorial Board	10
C-V measurement and modeling of double-BOX Trap-Rich SOI substrate	10
In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets	10
Editorial Board	10
Editorial Board	10
Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices	10
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs	10
Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures	10
TCAD-based design and verification of the components of a 200 V GaN-IC platform	9
Design of a NMOS-triggered SCR for dual-direction low-voltage ESD protection	9
Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach	9
Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors	9
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements	9
Impact of the leakage current of an AND-type synapse array on spiking neural networks	9
Equivalence of proton-induced displacement damage in InP-based HEMT	9
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K	9
Double Reference Layer STT-MRAM Structures with Improved Performance	9
On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform	9
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation	9
Compact modeling of photonic devices in Verilog-A for integrated circuit design	9
Self-similar reconfigurable low-pass MEMS filters using coplanar waveguide based on silicon	9
Stability and Vmin<	8
Reactive sputtering deposited α-MoO3 thin films for forming-free resistive random-access memory	8
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs	8
Impacts of trench angle on the performance of trench super-junction vertical double-diffused metal-oxide-semiconductor	8
Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer	8
Sensitivity implications for programmable transistor based 1T-DRAM	8
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise	8

The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study	8
Thermal coupling between FD-SOI FETs at cryogenic temperatures	8
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET	8
Editorial Board	8
Effects of electrode materials on solution-processed polyvinylidene fluoride-based piezoelectric nanogenerators: Do they matter?	8
A wireless stimulator system-on-chip with an optically writable ID for addressable cortical microimplants	8
Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study	8
The core-shell junctionless MOSFET	8
Editorial Board	8
Suppression of de-trapping by remanent polarization in dual-mechanism flash memory	8
Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation	8
Understanding negative capacitance physical mechanism in organic ferroelectric capacitor	8
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model	8
Corrigendum to “In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets” [Solid-State Electron. 201(2023) 10859]	8
Switching limits of top-gated carbon nanotube field-effect transistors	7
Sensing performance of Ti/TiO2 nanosheets/Au capacitive device: Implication of resonant frequency	7
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content	7
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices	7
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs	7
An eco-friendly bandgap engineering of semiconductor graphene oxide	7
Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure	7
A compact physical expression for the static drain current in heterojunction barrier CNTFETs	7
TCAD numerical modeling of negative capacitance ferroelectric devices for radiation detection applications	7
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules	7
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage	7
Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s	7
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations	7
Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications	7
Editorial to Letters from SISPAD-2022	7
A multi-energy level agnostic approach for defect generation during TDDB stress	7
Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance	7
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing	7
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors	7
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K	7
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate	7
Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses	7
Express method of electro-physical parameters extraction for power Schottky diodes	7
Investigation of the anomalous effect of the AC-signal frequency on flat-band voltage of Al/HfO2/SiO2/Si structures	7
Editorial Board	6
Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor	6
Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression	6
Building robust machine learning force fields by composite Gaussian approximation potentials	6
A simulation methodology for superconducting qubit readout fidelity	6
In-situ fluorine-doped ZnSnO thin film and thin-film transistor	6
Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application	6
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon	6
Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate	6
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging	6
Editorial Board	6
Surrogate models for device design using sample-efficient Deep Learning	6
Unified RTN and BTI statistical compact modeling from a defect-centric perspective	6
Synaptic array using multi-level AND flash memory cells for hardware-based neural networks	6
Sub micro-accelerometer based on spintronic technology: A design optimization	6
1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications	6
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs	6
Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model	6
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures	6
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications	6
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection	6
Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs	6
Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures	6
Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors	6
Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs	6
Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence	6
Perovskite-based optoelectronic artificial synaptic thin-film transistor	5
Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions	5
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures	5
Modeling electrical resistivity of CrSi thin films	5
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices	5
Editorial. Special issue. EUROSOI-ULIS 2023	5
A differential OTP memory based highly unique and reliable PUF at 180 nm technology node	5
Effect of SOI substrate on silicon nitride resistance switching using MIS structure	5
Editorial Board	5
Fabrication and modelling of MInM diodes with low turn-on voltage	5
Interface effects in ultra-scaled MRAM cells	5
Comprehensive evaluation of torques in ultra-scaled MRAM devices	5
Enhancing the temporal response of modified porous silicon-based CO gas sensor	5
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region	5
Analysis and modeling of anomalous flicker noise in long channel halo MOSFETs	5
Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime	5

A simulation physics-guided neural network for predicting semiconductor structure with few experimental data	5
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance	5
Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method	5
Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell	5
Improving cell current in 3D NAND flash memory with fixed oxide charge	5
Analog resistive switching behavior in BiCoO3 thin film	5
Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model	5
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices	5
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation	5
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing	5
Modeling current and voltage peaks generation in complementary resistive switching devices	5
Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm	5
Improved self-heating extraction with RF technique at cryogenic temperatures	5
Determination of source series resistances for InP HEMT under normal bias condition	5
Hierarchical simulation of nanosheet field effect transistor: NESS flow	5
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge	5
Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint	5
Editorial Board	5
Influence of temperature inhomogeneity and trap charge on current imbalance of SiC MOSFETs	5
Negative capacitance enables GAA scaling VDD to 0.5 V	5
Investigating random discrete dopant-induced variability in cryogenic gate-all-around nanosheet FETs: A quantum transport simulation study	5
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor	5
A simple method for the photometric characterization of organic light-emitting diodes	5
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications	5
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests	5
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors	5
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance	5
Analysis on effect of hot-carrier-induced degradation of NPT-IGBT	5
Efficient atomistic simulations of lateral heterostructure devices with metal contacts	5
About electron transport and spin control in semiconductor devices	5
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]	5
Design of auto-store circuit for nvSRAM with SONOS access transistor	5
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs	5
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon	5
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects	5
An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs	4
Methodology for parameters extraction with undoped junctionless EZ-FETs	4
GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates	4
Retention failure recovery technique for 3D TLC NAND flash memory via wordline (WL) interference	4
Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides	4
Comparison of impact of channel length- and width-directional taper angle in nanosheet and forksheet FETs for 2 nm node and beyond	4
Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices	4
The study on influence factors of contact properties of metal-MoS2 interfaces	4
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability	4
Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO	4
Investigation of effects of lateral boundary conditions on current filament movements in Trench-Gate IGBTs	4
A novel methodology for neural compact modeling based on knowledge transfer	4
Performance of FDSOI double-gate dual-doped reconfigurable FETs	4
Stress management in freestanding membranes obtained by ion implantation induced delamination	4
Electron and spin transport in semiconductor and magnetoresistive devices	4
Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications	4
Influence of gate-source/drain overlap on FeFETs	4
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications	4
Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables	4
Pseudo-MOSFET transient behavior: Experiments, model, substrate and temperature effect	4
Strong quantization of current-carrying electron states in δ-layer s	4
Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology	4
Editorial Board	4
Reliable parameter extraction method applied to an enhanced GaN HEMT small-signal model	4
Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters	4
Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application	4
A computational study of AlScN-based ferroelectric tunnel junction	4
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions	4
Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors	4
Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations	4
A composite model of memristors based on barrier and dopant drift mechanisms	4
Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs	4
Silicon nitride resistance switching MIS cells doped with silicon atoms	4
A dynamic current hysteresis model for IGZO-TFT	4
Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors	4
Pinning voltage model of vertical pinned photodiode for Dual-Pixel image sensor	4
Improved inter-device variability in graphene liquid gate sensors by laser treatment	4
Structural distortion in ferroelectric HfO2 – The factor that determines electric field-induced phase transformation	4
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures	4
Analysis of 1/f and G–R noise in Phosphorene FETs	4
One-step variation included compact modeling with conditional variational autoencoder	4
A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode	4
Device and circuit-level evaluation of a zero-cost transistor architecture developed via process optimization	4
Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric	4
A novel method used to prepare PN junction by plasmon generated under pulsed laser irradiation on silicon chip	4
Editorial Board	4
Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications	4
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films	4
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach	4
Analog characteristics of n-type vertically stacked nanowires	4
An efficient temperature dependent compact model for nanosheet FET for neuromorphic computing circuit	4
Multi-state tunnel field effect transistor based on face tunneling with gate-source overlap	4
Impact of work function metal stacks on the performance and reliability of multi-V RMG CMOS technology	4
Si/Ge1−x	4
Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic	4
Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs	4
Interconnect effects on thermal resistance of CMOS-SOI transistors in microwave power integrated circuits	4
Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation	4
Editorial Board	4
High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation	4