Solid-State Electronics

Article	Citations
Low power consumption of non-volatile memory device by tunneling process engineering	55
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function	44
An enzymatic glucose biosensor using the BESOI MOSFET	26
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier	22
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length	21
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact	20
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation	20
Non-local transport effects in semiconductors under low-field conditions	19
Si nanowire-based micro-capacitors fabricated with metal assisted chemical etching for integrated energy storage applications	19
Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering	18
Tailoring the optoelectronic properties of PZT through the modulation of the thin film	18
Smart-CX – Method of extraction of parasitic capacitances in ICs	18
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors	18
Editorial Board	18
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content	16
Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer	16
Editorial Board	16
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier	15
Analog behavior of V-FET operating in forward and reverse mode	15
Compact I-V model for back-gated and double-gated TMD FETs	14
Experimental study of thermal coupling effects in FD-SOI MOSFET	14
Robustness of using degree of match in performing analog multiplication with spin-torque oscillators	13
Editorial Board	13
Novel Y-function methodology parameter estimation from weak to strong inversion operation	12
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors	12

Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing	12
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS12
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor	12
Analysis of a Hall-Corbino disk plate having a point current source at the center	12
Analytical model based estimation of line edge roughness induced V<	12
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures	12
Impact of substrate resistivity on spiral inductors at mm-wave frequencies	11
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients	11
An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges	11
An ultra low power spiking neural encoder of microwave signals	11
Ab initio study of electron mobility in V2	11
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach	11
Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations	10
28 nm FD-SOI MEOL parasitic capacitance segmentation using electrical testing and semiconductor process modeling	10
Editorial Board	10
Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model	10
Pragmatic OxRAM compact model ready to use for design studies	10
TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET	10
Editorial Board	10
Detailed low frequency noise assessment on GAA NW n-channel FETs	10
A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime	10
Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices	9
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET	9
Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures	9
Simplified electrical modeling for dye sensitized solar cells: Influences of the blocking layer and chenodeoxycholic acid additive	9
The core-shell junctionless MOSFET	9
Editorial Board	9
Editorial Board	9
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs	9
Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors	9
Double Reference Layer STT-MRAM Structures with Improved Performance	9
3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors	9
Compact modeling of photonic devices in Verilog-A for integrated circuit design	9
In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets	9
Impact of the leakage current of an AND-type synapse array on spiking neural networks	9
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model	9
On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform	8
Design of a NMOS-triggered SCR for dual-direction low-voltage ESD protection	8
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation	8
Suppression of de-trapping by remanent polarization in dual-mechanism flash memory	8
Analysis of reverse voltage distribution of high-voltage diode stack considering effect of temperature	8
Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study	8
Self-similar reconfigurable low-pass MEMS filters using coplanar waveguide based on silicon	8
TCAD-based design and verification of the components of a 200 V GaN-IC platform	8
Equivalence of proton-induced displacement damage in InP-based HEMT	8
The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study	8
Impacts of trench angle on the performance of trench super-junction vertical double-diffused metal-oxide-semiconductor	8
C-V measurement and modeling of double-BOX Trap-Rich SOI substrate	8
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements	8
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K	8

On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise	8
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs	8
Corrigendum to “In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets” [Solid-State Electron. 201(2023) 10859]	8
Stability and Vmin<	8
Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach	8
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing	7
Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s	7
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate	7
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K	7
Effects of electrode materials on solution-processed polyvinylidene fluoride-based piezoelectric nanogenerators: Do they matter?	7
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations	7
Understanding negative capacitance physical mechanism in organic ferroelectric capacitor	7
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules	7
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors	7
Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses	7
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage	7
Sensing performance of Ti/TiO2 nanosheets/Au capacitive device: Implication of resonant frequency	7
Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer	7
Switching limits of top-gated carbon nanotube field-effect transistors	7
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content	7
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs	7
A multi-energy level agnostic approach for defect generation during TDDB stress	7
Sensitivity implications for programmable transistor based 1T-DRAM	7
A wireless stimulator system-on-chip with an optically writable ID for addressable cortical microimplants	7
Editorial Board	7
Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance	7
Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation	7
TCAD numerical modeling of negative capacitance ferroelectric devices for radiation detection applications	7
An eco-friendly bandgap engineering of semiconductor graphene oxide	7
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices	6
In-situ fluorine-doped ZnSnO thin film and thin-film transistor	6
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications	6
Sub micro-accelerometer based on spintronic technology: A design optimization	6
Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures	6
Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor	6
Building robust machine learning force fields by composite Gaussian approximation potentials	6
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection	6
Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure	6
Surrogate models for device design using sample-efficient Deep Learning	6
Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression	6
Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate	6
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures	6
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer	6
Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence	6
Unified RTN and BTI statistical compact modeling from a defect-centric perspective	6
Editorial to Letters from SISPAD-2022	6
Express method of electro-physical parameters extraction for power Schottky diodes	6
A compact physical expression for the static drain current in heterojunction barrier CNTFETs	6
Editorial Board	6
Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model	6
Editorial Board	6
A simulation methodology for superconducting qubit readout fidelity	6
Synaptic array using multi-level AND flash memory cells for hardware-based neural networks	6
Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs	6
Investigation of the anomalous effect of the AC-signal frequency on flat-band voltage of Al/HfO2/SiO2/Si structures	6
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region	5
Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method	5
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing	5
Enhancing the temporal response of modified porous silicon-based CO gas sensor	5
Improved self-heating extraction with RF technique at cryogenic temperatures	5
Analysis on effect of hot-carrier-induced degradation of NPT-IGBT	5
Editorial Board	5
Modeling electrical resistivity of CrSi thin films	5
Improving cell current in 3D NAND flash memory with fixed oxide charge	5
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor	5
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications	5
Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors	5
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon	5
A simple method for the photometric characterization of organic light-emitting diodes	5
Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell	5
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance	5
A simulation physics-guided neural network for predicting semiconductor structure with few experimental data	5
Interface effects in ultra-scaled MRAM cells	5
Negative capacitance enables GAA scaling VDD to 0.5 V	5
Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model	5
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs	5
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors	5
Editorial. Special issue. EUROSOI-ULIS 2023	5
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]	5
Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs	5

Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application	5
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging	5
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects	5
Determination of source series resistances for InP HEMT under normal bias condition	5
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests	5
About electron transport and spin control in semiconductor devices	5
A differential OTP memory based highly unique and reliable PUF at 180 nm technology node	5
Modeling current and voltage peaks generation in complementary resistive switching devices	5
Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions	5
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge	5
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation	5
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices	5
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs	5
1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications	5
Editorial Board	4
Electron and spin transport in semiconductor and magnetoresistive devices	4
Hierarchical simulation of nanosheet field effect transistor: NESS flow	4
Silicon nitride resistance switching MIS cells doped with silicon atoms	4
Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric	4
Influence of gate-source/drain overlap on FeFETs	4
Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology	4
Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs	4
Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors	4
Analog resistive switching behavior in BiCoO3 thin film	4
Role of temperature, MTJ size and pulse-width on STT-MRAM bit-error rate and backhopping	4
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET	4
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures	4
A composite model of memristors based on barrier and dopant drift mechanisms	4
GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates	4
A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode	4
Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm	4
Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications	4
Efficient atomistic simulations of lateral heterostructure devices with metal contacts	4
A novel method used to prepare PN junction by plasmon generated under pulsed laser irradiation on silicon chip	4
Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides	4
Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation	4
Editorial Board	4
Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application	4
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability	4
Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint	4
A novel methodology for neural compact modeling based on knowledge transfer	4
Reliable parameter extraction method applied to an enhanced GaN HEMT small-signal model	4
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films	4
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon	4
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors	4
Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion	4
Influence of temperature inhomogeneity and trap charge on current imbalance of SiC MOSFETs	4
SPICE simulation of the time-dependent clustering model for dielectric breakdown	4
Perovskite-based optoelectronic artificial synaptic thin-film transistor	4
Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices	4
Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables	4
Comprehensive evaluation of torques in ultra-scaled MRAM devices	4
A dynamic current hysteresis model for IGZO-TFT	4
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions	4
Retention failure recovery technique for 3D TLC NAND flash memory via wordline (WL) interference	4
Strong quantization of current-carrying electron states in δ-layer s	4
High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation	4
Methodology for parameters extraction with undoped junctionless EZ-FETs	4
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures	4
Si/Ge1−x	4
Design of auto-store circuit for nvSRAM with SONOS access transistor	4
Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters	4
Analysis and modeling of anomalous flicker noise in long channel halo MOSFETs	4
Improved inter-device variability in graphene liquid gate sensors by laser treatment	4
Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime	4
Compact charge model for Si gate-all-around nMOSCAPs with cylindrical cross-sections considering the density-gradient equation	4
Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations	4
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance	4
Deep spiking neural networks with integrate and fire neuron using steep switching device	4
Editorial Board	4
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices	4
Pseudo-MOSFET transient behavior: Experiments, model, substrate and temperature effect	4
Effect of SOI substrate on silicon nitride resistance switching using MIS structure	4
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach	4
Fabrication and modelling of MInM diodes with low turn-on voltage	4
Device and circuit-level evaluation of a zero-cost transistor architecture developed via process optimization	4
An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs	4
The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors	3
Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination	3
GatedNN: An accurate deep learning-based parameter extraction for BSIM-CMG	3
A current model for FOI FinFETs with back-gate bias modulation	3
Time-dependent spin injection	3
Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology	3
Implantation-free SiC thyristor with single-mask 3D termination near 10 kV	3
Performance optimization of epitaxial-layer based Si/SiGe hetero-junction area scaled tunnel FET label-free biosensors considering steric hindrance	3
Ruthenium doped Ge2Sb2Te5 nanomaterial as fast speed phase-change materials with good thermal stability	3
Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs	3
Temperature influence on experimental analog behavior of MISHEMTs	3
Analogies for Dirac fermions physics in graphene	3
Well-balanced 4H-SiC JBSFET: Integrating JBS diode and VDMOSFET characteristics for reliable 1700V applications	3
Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications	3
Improvement of inverted planar heterojunction solar cells efficiency by using KI/Alq3 hybrid exciton blocking layer	3
Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade	3
Influence of gate work function variations on characteristics of fin-shaped silicon quantum dot device with multi-gate under existence of gate electrostatic coupling	3
Editorial Board	3