Semiconductor Science and Technology

Papers
(The H4-Index of Semiconductor Science and Technology is 23. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-06-01 to 2025-06-01.)
ArticleCitations
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL65
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices61
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements61
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace45
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 1250144
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer38
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors32
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach31
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate30
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity30
Bidirectional threshold switching in Pt/Ag:Ni(OH)2/Pt structure30
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems29
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing28
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance27
Germanium thin film manufacturing using covalent bonding process27
An all-optical equalizer SWAP gate (ESG)26
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications26
Tunnel hole injection in unipolar HgCdTe-based laser diode26
Electrical transport properties of highly doped N-type GaN materials25
Design and implementation of an inverter and its application in ring oscillator circuits using an organic-thin-film-transistor based on an FTM-derived channel25
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor25
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET23
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD23
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