OOIR: Observatory of International Research

Papers

(The H4-Index of Semiconductor Science and Technology is 23. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-09-01 to 2025-09-01.)

Article	Citations
Low-power double-gate MoS₂ negative capacitance transistors with near-zero DIBL	82
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements	68
The surface tension of Ga₂O₃ melt measured by a drop-weight method in an optical floating-zone furnace	66
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 12501	49
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer	39
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach	39
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate	35
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications	33
Germanium thin film manufacturing using covalent bonding process	33
Tunnel hole injection in unipolar HgCdTe-based laser diode	31
Printed in-plane electrolyte-gated transistor based on zinc oxide	31
Electrical transport properties of highly doped N-type GaN materials	30
Design and implementation of an inverter and its application in ring oscillator circuits using an organic-thin-film-transistor based on an FTM-derived channel	28
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors	28
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices	27
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET	27
The ab initio study of n-type nitrogen and gallium co-doped diamond	26
MISHEMT intrinsic voltage gain under multiple channel output characteristics	26
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing	26
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance	24
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity	23
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems	23
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD	23