Semiconductor Science and Technology

Papers
(The H4-Index of Semiconductor Science and Technology is 22. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Lasing emission from hybrid silver nanowires and zinc oxide61
Materials for 1550nm-pumped THz photoconductive emitters58
A high rectification efficiency Dual Fin Si0.7Ge0.3/Si/Si0.7Ge0.3 quantum well channel structure FinFET for 2.45 GHz micropower microwave wireless energy ha57
First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications44
Tunnel hole injection in unipolar HgCdTe-based laser diode42
Monte Carlo evaluation of GaN THz Gunn diodes33
Research on hybrid processing of silicon carbide based on laser cutting30
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe29
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor29
Comparative analysis of Y2O3 and Al2O3 interfacial layers in modulating the electrical properties of ZrO2 and HfO2 on Ge29
Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography28
Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure28
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics27
Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application27
Study on the fundamental factors of the property evolution of a 300 mm polycrystalline trap-rich layer26
MISHEMT intrinsic voltage gain under multiple channel output characteristics25
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer25
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study23
Effect of silver doping on electrical characteristics of aluminum/HfO2/p-silicon metal-oxide-semiconductor devices23
Demonstration of a lateral p-NiO/n-GaN JFET fabricated by selective-area regrowth22
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance22
Process optimization of 4H-SiC chemical mechanical polishing based on grey relational analysis22
Transient analysis of graphene-based on-chip interconnects using closed-form MRA model22
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