Semiconductor Science and Technology

Papers
(The median citation count of Semiconductor Science and Technology is 2. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-09-01 to 2025-09-01.)
ArticleCitations
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL82
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements68
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace66
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 1250149
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach39
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer39
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate35
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications33
Germanium thin film manufacturing using covalent bonding process33
Tunnel hole injection in unipolar HgCdTe-based laser diode31
Printed in-plane electrolyte-gated transistor based on zinc oxide31
Electrical transport properties of highly doped N-type GaN materials30
Design and implementation of an inverter and its application in ring oscillator circuits using an organic-thin-film-transistor based on an FTM-derived channel28
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors28
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET27
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices27
MISHEMT intrinsic voltage gain under multiple channel output characteristics26
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing26
The ab initio study of n-type nitrogen and gallium co-doped diamond26
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance24
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems23
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD23
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity23
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor22
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique21
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe20
Enhanced photodetector performance of SnO2/NiO heterojunction via Au incorporation19
The impact of composite defects Vi O(Ga) on the electrical properties of β-Ga2O3/AlN heterojunctions19
Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells19
In2O3 decorated TiO2 for broadband photosensing applications18
A novel V-grooved vertical GaN-based HEMT on silicon utilizing 2DEG for enhanced performance18
Investigation of Maximum Gain Amplifier using a Split Stacked Recessed Gate design on β-Ga2O3 MOSFET for S - band Applications18
Enhancing multi-functionality of reconfigurable transistors by implementing high retention capacitorless dynamic memory16
Straightforward synthesis and mechanism insight of TiO2/α′-AgVO3 heterostructure with enhanced photocatalytic activity16
Low-resistive gate module for RF GaN-HFETs by electroplating16
Indirect stress and air-cavity displacement measurement of MEMS tunable VCSELs via micro-Raman and micro-photoluminescence spectroscopy16
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET15
Enhancing light trapping for improved efficiency of perovskite solar cells: design and analysis15
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs15
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon14
Study of Ge-on-Si avalanche photodiodes for short-wave infrared applications14
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors14
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films14
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells14
Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity13
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance13
Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications13
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices13
Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery12
Increasing the scope and precision of the steady-state photocarrier grating technique by measuring the photocurrents at several voltages12
Dual-mode dendritic devices enhanced neural network based on electrolyte gated transistors12
Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs12
Design and optimization of DTSCR for high-speed I/O ESD protection of on-chip ICs12
Nanoscale wafer patterning using SPM induced local anodic oxidation in InP substrates12
Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs12
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric12
Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors12
The effect of selenium ion concentration on zinc selenide thin films prepared by a photo-assisted chemical bath deposition method11
Photoluminescence of an InSb layer on a germanium substrate11
Insights into the growth of hexagonal Si crystals using Al-based nano absorber11
Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes11
Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance10
Recent advances and optoelectronic applications of Cu–Ag–Bi–I quaternary lead-free perovskites10
Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission10
STDP implementation using multi-state spin−orbit torque synapse10
Structural and optical evolution of compressively strained Ge0.965Sn0.035 films on silicon undergoing microwave annealing10
The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs10
Shallow donor states and interlevel transitions in gapped graphene bilayers10
Multi-stage infrared detectors10
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *10
Optimizing photocurrent intensity in layered SiGe heterostructures10
A high-speed avalanche photodiode with large coupling tolerance10
Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers10
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications10
Pre-metal dielectric PE TEOS oxide pitting in 3D NAND: mechanism and solutions9
Survey, taxonomy, and methods of QCA-based design techniques—part I: digital circuits9
Unveiling the potential of photonic crystal surface emitting lasers: a concise review9
Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockl9
Thermal conductivity and phonon scattering of AlGaN nanofilms by elastic theory and Boltzmann transport equation9
A review of quantum transport in field-effect transistors9
Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT9
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes9
Optimization of tin-based inverted perovskite solar cell with MoS2 interlayer by one-dimensional simulation9
Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy9
Applications of time-resolved photoluminescence for characterizing silicon photovoltaic materials9
Resistor-to-Schottky barrier analytical model for ohmic contact test structures9
Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities9
Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect9
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias9
Hydroxylation-induced defect states and formation of a bidentate acetate adstructure of TiO2 catalysts with acetic acid variation for catalytic application8
Annealing-dependent changes in the structural and electrical properties of NiO epitaxial films8
The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon8
Fermi energy-level shift of p-type AgBiSe2 single crystal featuring semiconductor-to-metal transition at cryogenics8
Study on the series resistance of betavoltaic batteries8
Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric8
Broadband photodetectors based on PbS quantum dots synthesized using the multiple injection growth method8
A BP-Smith combined temperature control method for thin film preparation processing8
Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors8
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin8
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures8
Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers8
Estimation of performance degradation due to interface traps in the gate and spacer stack of NC-FinFET8
Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer8
Inverter design with positive feedback field-effect transistors8
A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing8
Computational investigation on the photovoltaic performance of an efficient GeSe-based dual-heterojunction thin film solar cell8
Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography8
Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers8
The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers8
Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures8
Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode8
Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation8
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy8
Composition-graded quantum barriers improve performance in InGaN-based laser diodes8
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures8
Investigation of LVTSCR ESD protection devices with RC-INV triggering circuits8
The conductivity and electrophysical characteristics of Janus-like TaSi2/Si nanoparticles8
Transport and performance study of double-walled black phosphorus nanotube transistors8
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization8
A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converter8
Row hammer-induced D0 failure improvement in sub-20 nm DRAM using an air gap8
Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation8
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs8
A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition8
Recent progress in III-nitride nanosheets: properties, materials and applications7
High-performance narrow spectrum green phosphorescent top-emitting organic light-emitting devices with external quantum efficiency up to 38%7
Retraction: Potential application of AlP nanosheet semiconductor in the detection of toxic phosgene, thiophosgene, and formaldehyde gases (2022 Semicond. Sci. Technol. 37 095015)7
Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire7
Broadband plasmonic absorption enhancement of perovskite solar cells with embedded Au@SiO2@graphene core–shell nanoparticles7
Ti supersaturated Si by microwave annealing processes7
Advanced trench junction barrier Schottky integrated SiC trench MOSFET with improved switching oscillation suppression7
A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses7
Investigation of breakdown voltage degradation in low-voltage narrow gate trench MOSFET by edge termination optimization7
The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process7
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers7
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets7
DFT study of the structural, electronic and optoelectronic properties of PDAPb(I1−x Br x )4 perovskites7
On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer7
Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT7
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures7
High performance solar-blind photodetectors based on MOCVD grown β7
Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor7
Photosensitive Schottky diodes based on nanostructured thin films of graphitized carbon formed on Cd1− x Zn 7
Design and simulation of a III-Nitride light emitting transistor7
The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects7
Characterization of PECVD Si3N4 thin film in multiple oxide–nitride stack for 3D-NAND flash memory7
Study on memory characteristics of fin-shaped feedback field effect transistor7
Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs7
Highly efficient stable blue organic light-emitting diodes based on a novel anthracene[2,3-b]benzofuran framework7
Electronic transport properties of WS2 using ensemble Monte Carlo method7
The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs7
A critique of length and bias dependent constraints for 1T-DRAM operation through RFET7
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations7
Calculation of discrete and resonant states of Coulomb acceptor in HgCdTe alloys7
A facile method of deriving solar selective nickel-cobalt oxide thin films via spraying process7
Multi functional ionic Ru(bpy)3(PF6)2 assisted preparation of perovskite solar cell with over 19% and superior stability7
Superjunction IGBT with split carrier storage layer6
Modeling and optimal design of silicon superjunctions considering charge imbalance6
Impact of pyrolysis temperature on physicochemical properties of carbon nitride photocatalyst6
Comparative study of III-phosphide- and III-nitride-based light-emitting diodes: understanding the factors limiting efficiency6
Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes6
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer6
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode6
Permittivity modulation in Si-based PIN diode by electron irradiation6
Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs6
CMOS compatible manufacturing of a hybrid SET-FET circuit6
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)6
High mobility Ge 2DHG based MODFETs for low-temperature applications6
Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate6
Improving the accuracy and robustness of RRAM-based in-memory computing against RRAM hardware noise and adversarial attacks6
Recent progress in red light-emitting diodes by III-nitride materials6
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method6
A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoring6
Surface defects in 4H-SiC: properties, characterizations and passivation schemes6
Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study6
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor6
First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications6
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*6
Helical liquids in semiconductors6
Influence of substrate biasing on structural, chemical and electrical properties of Al2O3 thin films deposited by PEALD6
Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes6
Optimizing deposition parameters for CBD-grown CdS thin films: insights into morphology, optical, and electrical properties for optoelectronic applications6
Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric6
Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications6
Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials6
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study6
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout6
Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode6
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics6
Zinc oxide-based sensor prepared by modified sol–gel route for detection of low concentrations of ethanol, methanol, acetone, and formaldehyde6
GaAs nanocone array-based hybrid solar cells with excellent light-trapping capabilities and enhanced photogeneration rate6
OxRAM + OTS optimization for binarized neural network hardware implementation6
Study of traps in low-temperature polysilicon thin film transistors using a current transient method6
Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer6
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same6
A junctionless dual-gate MOSFET-based programmable inverter for secured hardware applications using nitride charge trapping5
Investigation of 4,4′-bis[(N- carbazole) styryl] biphenyl (BSB4) for a pure blue fluorescent OLED with enhanced efficiency nearing the theoretical limit5
A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures5
Effect of gas pre-decomposition device on the growth of GaN epitaxial layer5
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A5
TCAD Analysis of SiC Trench MOSFET Structures with Improved Frequency Figure of Merit5
Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon5
A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect5
On the photoresponse regulations by deep-level traps in CsPbBr3 single crystal photodetectors5
The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films5
Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique5
Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge35
A hybrid random laser using dye with self-organized GaN nanorods5
Design and performance analysis of GaN vertical JFETs with ion-implanted gates5
Proteretic device: modelling and implementation in electronics and optical domain5
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications5
Analytic electrostatic model of amorphous-crystalline Ge2Sb2Te5 heterojunction5
Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers5
Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer5
High-responsivity silicon p–i–n mesa-photodiode5
Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition5
Exploiting the electrothermal timescale in PrMnO3 RRAM for a compact, clock-less neuron exhibiting biological spiking patterns5
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation5
Gated silicon nanowire for thermo-electric power generation and temperature sensing5
A SiC sidewall enhanced trench JBS diode with improved forward performance5
High-performance and stable perovskite photodetector with mixed 2D/3D perovskite surface passivation layer5
A 16 nm FinFET circuit with triple function as digital multiplexer, active-high and active-low output decoder for high-performance SRAM architecture5
Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs5
Room temperature RF-sputtered Cu2O thin films: a promising hole transport layer for antimony chalcogenide solar cells5
Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off5
Atmospheric neutron-induced single event burnout characterization of 4.5 kV Si IGBTs with spallation neutron irradiation5
Efficiency enhancement of triple absorber layer perovskite solar cells with the best materials for electron and hole transport layers: numerical study5
The effect of series stacking on fast interruption for drift step recovery diode5
Study on low-temperature evaporation of Ag2O-based Ag electrode and electron injection layer and their application in OLEDs5
Non-ideal program-time conservation in charge trap flash for deep learning5
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric5
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis5
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs5
Room temperature interband cascade lasers near 7.7 µm and dependence on structural quality5
Modified photodiode equivalent circuit model considering coplanar waveguide electrodes5
Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices5
High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation4
Quantification of losses in bent waveguides within DBR-RW laser diodes emitting at 785 nm4
Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing4
Synergetic engineering of oxidizable, redox, and inert metal decorated copper oxide for non-volatile memory and neuromorphic computing applications4
Realization of a 2H–Si microneedle with an ultrafast growth rate of 6.7 × 104 Å·s−14
Effect of two-dimensional non-local screening on characteristics of transition metal dichalcogenide monolayers4
Analysis of the buffer trap-induced kink effect in AlGaN/GaN HEMT on SiC substrate4
Cascode Configuration of GaN Static Induction Transistor for MHz Power Switch Applications4
THz polarization-dependent response of antenna-coupled HgCdTe photoconductors under an external constant electric field4
Investigation of resistive switching in lead-free bismuth–silver halide double perovskite4
Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor4
Role of magnetic doping in topological HgTe and application of the Gram–Schmidt method for computing impurity states in quantum wells4
Source material valuation of charge plasma based DG-TFET for RFIC applications4
Effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around MOSFETs4
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