Journal of Vacuum Science & Technology A

Papers
(The H4-Index of Journal of Vacuum Science & Technology A is 24. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
Self-powered solar blind ultraviolet photodetector based on amorphous (In0.23Ga0.77)2O3/bixbyite (In0.67Ga0.33)2O3 heterojunction101
Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions68
Implementation of an artificial spiking neuron with photoreceptor functionality using gas discharge tubes65
Enhancing chemical vapor deposition growth and fabrication techniques to maximize hole conduction in tungsten diselenide for monolithic CMOS integration61
Friction and wear behavior of C implanted copper via ion beam-assisted bombardment56
In situ metal organic chemical vapor deposition of ultrathin sp2-bonded boron nitride dielectric on gallium nitride52
Peak intensities in Auger electron spectroscopy for quantification: Relationship between differentiated spectral intensities and direct peak areas51
Nitrogen-incorporated tetrahedral amorphous carbon optically transparent thin film electrode45
Analysis of pulsed direct current reactive magnetron sputtering on a silicon target40
Erratum: “MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy” [J. Vac. Sci. Technol. A 42, 050401 (2024)]36
Novel principal component analysis tool based on python for analysis of complex spectra of time-of-flight secondary ion mass spectrometry34
Study on the modification of TC11 titanium alloy microarc oxidized film layer by ZrO2 particles32
Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage32
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD29
GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth29
Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O327
Testing commonly used background removal procedures for XPS quantitation of homogeneous material: Fe2O3, a transition metal oxide example26
Tailoring structure, morphology, and tribo-mechanical properties of HiPIMS-deposited CrxNy coatings for enhanced performance in wear and corrosion protection26
Hardness, adhesion, and wear behavior of magnetron cosputtered Ti:Zr-O-N thin films25
Structural, electronic, and thermodynamic properties of Li3X (X = N, P, As) compounds for solid-state lithium-ion batteries25
Effects of duty cycle and nitrogen flow rate on the mechanical properties of (V,Mo)N coatings deposited by high-power pulsed magnetron sputtering25
High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching25
Plasma enhanced atomic layer etching of high-k layers on WS224
Cathodoluminescence of β-Ga2O3:Fe (2¯01) irradiated with boron ions24
0.089993953704834