Journal of Vacuum Science & Technology A

Papers
(The H4-Index of Journal of Vacuum Science & Technology A is 20. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-08-01 to 2025-08-01.)
ArticleCitations
Extreme atomic-scale surface roughening: Amino acids on Ag on Au(111)91
Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O376
Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions49
Applications and mechanisms of anisotropic two-step Si3N4 etching with hydrogen plasma conditioning47
Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage43
Role of nanoscale surface defects on Sn adsorption and diffusion behavior on oxidized Nb(100)43
Study of synthesis strategies to improve the electrical properties of magnetron sputtered copper oxide thin films42
Comparing sputter rates, depth resolution, and ion yields for different gas cluster ion beams (GCIB): A practical guide to choosing the best GCIB for every application40
Erratum: “Microscopic origins of radiative performance losses in thin-film solar cells at the example of (Ag,Cu)(In,Ga)Se2 devices” [J. Vac. Sci. Technol. A 42, 022803 (2024)]37
Effects of duty cycle and nitrogen flow rate on the mechanical properties of (V,Mo)N coatings deposited by high-power pulsed magnetron sputtering31
Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface30
Nitrogen-incorporated tetrahedral amorphous carbon optically transparent thin film electrode28
Plasma enhanced atomic layer etching of high-k layers on WS228
Core-shell metallic nanotube arrays for highly sensitive surface-enhanced Raman scattering (SERS) detection27
Self-powered solar blind ultraviolet photodetector based on amorphous (In0.23Ga0.77)2O3/bixbyite (In0.67Ga0.33)2O3 heterojunction25
Using auxiliary electrochemical working electrodes as probe during contact glow discharge electrolysis: A proof of concept study25
Peak intensities in Auger electron spectroscopy for quantification: Relationship between differentiated spectral intensities and direct peak areas25
Use of in situ electrical conductance measurements to understand the chemical mechanisms and chamber wall effects during vapor phase infiltration doping of poly(aniline) with TiCl4 + H2O24
Erratum: “MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy” [J. Vac. Sci. Technol. A 42, 050401 (2024)]21
Transport and trap states in proton irradiated ultra-thick κ-Ga2O320
High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching20
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