OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 41. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-06-01 to 2025-06-01.)

Article	Citations
Table of Contents	165
Editorial 2020 Electron Devices Society George E. Smith Award	133
IEEE Electron Device Letters information for authors	132
Blank Page	124
EDS Meetings Calendar	85
Front Cover	80
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure	68
RFIC 2023 Call for Papers	68
Blank Page	66
Table of Contents	61
Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors	61
Small-Area Perovskite Photodiodes With High Detectivity and Stability	60
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric	60
A Voltage-Controlled Gain Cell Magnetic Memory	58
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	58
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment	56
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	54
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer	53
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching	51
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	50
Toward the Measurement of Microwave Electric Field Using Cesium Vapor MEMS Cell	50
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film	48
Guar Gum-WTe₂ Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity	48
Design and Experimental Research of a Compact Ku-Band Triaxial Klystron Amplifier With Low Seed Injection Power	48
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices	47

Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration	47
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for V_T Prediction Using Lateral Carrier Density Profiling Technique	46
The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy	46
High-Reliability HfO₂/ZrO₂ Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization	46
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	46
Influence of Annealing Temperature on ZrO₂ Nanoparticles for Improved Photodetection	45
Flexible Organic Optoelectronic Devices for Neuromorphic Computing	45
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr₃ Perovskite Nanocrystals	45
Changes to the Editorial Board	44
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS	43
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics	43
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors	42
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode	42
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption	42
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices	42
Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System	41
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion	41