OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 41. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-09-01 to 2025-09-01.)

Article	Citations
Table of Contents	139
IEEE Electron Device Letters information for authors	91
Blank Page	72
Front Cover	69
EDS Meetings Calendar	69
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure	66
RFIC 2023 Call for Papers	65
Blank Page	63
Table of Contents	62
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric	61
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	60
A Voltage-Controlled Gain Cell Magnetic Memory	58
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	57
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment	57
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	55
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer	55
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices	53
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration	53
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	51
Influence of Annealing Temperature on ZrO₂ Nanoparticles for Improved Photodetection	50
Changes to the Editorial Board	49
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS	49
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode	49
Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory	48
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion	48

A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption	48
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning	47
3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls	47
Au- and Ag-Containing Contacts to GaSb-Photovoltaic Converters	47
Table of Contents	46
Blank Page	45
IEEE Electron Device Letters Publication Information	45
Table of Contents	45
Hollow Cylindrical Micro-LEDs: Enabling High-Brightness Quantum Dots-Based Color Conversion for Full-Color Displays	44
Front Cover	44
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiN_x Passivation	44
High-Reliability HfO₂/ZrO₂ Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization	44
On the Dynamic R_ON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers	44
IEEE Electron Device Letters Information for Authors	43
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier	43
IEEE Electron Device Letters Information for Authors	41