OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 41. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-08-01 to 2025-08-01.)

Article	Citations
Table of Contents	137
Editorial 2020 Electron Devices Society George E. Smith Award	135
IEEE Electron Device Letters information for authors	133
Blank Page	82
EDS Meetings Calendar	69
Front Cover	67
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure	64
RFIC 2023 Call for Papers	64
Blank Page	63
Table of Contents	60
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric	60
Small-Area Perovskite Photodiodes With High Detectivity and Stability	58
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	56
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment	55
A Voltage-Controlled Gain Cell Magnetic Memory	55
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	52
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer	52
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film	51
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	51
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices	50
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration	49
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for V_T Prediction Using Lateral Carrier Density Profiling Technique	49
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	49
Flexible Organic Optoelectronic Devices for Neuromorphic Computing	48
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr₃ Perovskite Nanocrystals	47

Influence of Annealing Temperature on ZrO₂ Nanoparticles for Improved Photodetection	47
Changes to the Editorial Board	46
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode	45
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS	45
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption	45
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics	45
Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory	44
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion	44
3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls	43
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning	43
Au- and Ag-Containing Contacts to GaSb-Photovoltaic Converters	43
Table of Contents	43
Table of Contents	42
IEEE Electron Device Letters Publication Information	42
Blank Page	42
On the Dynamic R_ON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers	41
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices	41
Front Cover	41
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier	41