OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)

Article	Citations
Table of Contents	115
IEEE Electron Device Letters Publication Information	83
Table of Contents	83
Front Cover	77
Blank Page	75
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	74
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	74
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	70
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion	67
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning	66
RFIC 2023 Call for Papers	65
Table of Contents	64
EDS Meetings Calendar	62
Blank Page	61
Front Cover	59
IEEE Electron Device Letters Information for Authors	59
IEEE Electron Device Letters Information for Authors	56
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications	56
Table of Contents	56
EDS Meetings Calendar	55
Guar Gum-WTe₂ Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity	55
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier	55
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption	54
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection	54
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film	53

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes	52
Demonstration of a Scalable Magnetron Array Through Extracavity Coupling	51
New Insights Into Low-Temperature Thermal Stability and PBTI in Back-Gated IGZO/HfO ₂ Transistors Related to Oxygen Migration	50
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs	50
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application	50
Front Cover	50
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure	49
Terahertz Electronic Metadevices: Principles Behind the Ultra-High Cutoff Frequency	49
Axisymmetric Transformer in Glass IPD Technology and Its Application to Miniaturized On-Chip Bandpass Filters	48
Localized Thermal Effect Enhanced NBTI in Multifin pFinFETs Under Low Drain Bias	47
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics	45
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment	45
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for V_T Prediction Using Lateral Carrier Density Profiling Technique	45
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching	44
High-Voltage β-Ga₂O₃ RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel	44
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors	44
Characteristics of Hybrid Structured Organic Light-Emitting Diodes Display: Coupled Rigidity With Flexibility	44
Symmetric Phase-Engineered Hf _1-x Zr _x O ₂ Enab	43
A Low-Capacitance Long-Strip Electrode Design for Fast-Switching Vertical SiC PCSS	43