OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 40. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)

Article	Citations
Blank Page	158
TechRxiv: Share Your Preprint Research with the World!	128
IEEE Electron Device Letters Publication Information	127
Table of Contents	116
EDS Meetings Calendar	107
A Simplified Device Achieves Color-Temperature Tunable Organic Light-Emitting Diodes	102
Non-stationary wide-band operation of a high-current relativistic gyrotron	81
Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29	77
Optimizing Neutral-Axis Alignment for Improved Stability and Synaptic Performance in Flexible Transistors	66
Reduced Dark-Current, Rise-Time, and On-State Delay of Avalanche GaAs Photoconductive Semiconductor Switches by Annealing-Grinding Process	64
Hardware Estimation for the Eigenvectors of Stochastic Matrices Using Magnetic Tunnel Junctions	62
15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer	61
TCAD Study of Giant Negative Differential Resistance in Nanoscale Ferroelectric Field-Effect Transistors	61
An Al-Drain Silicon Transistor With Ultra-Steep Subthreshold Slope and Low Operating Voltage	57
Room Temperature Polymer-based Hybrid Bonding Scheme for 3D Integration and Advanced Packaging	56
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Solid-State Image Sensors"	54
Spintronics-Devices and Circuits	54
Thermal characterization and design of AlN/GaN/AlN HEMTs on foreign substrates	53
Spintronics-Devices and Circuits	53
A 4.15GHz super high frequency quartz resonator based on electron-beam lithography	52
1200-V GaN-on-Si Quasi-Vertical p-n Diodes	51
Si-Based NIR Tunneling Heterojunction Photodetector With Interfacial Engineering and 3D-Graphene Integration	50
Localized Surface Plasmon Coupling Nanorods With Graphene as a Transparent Conductive Electrode for Micro Light-Emitting Diodes	50
Fully Integrated Memristive Hodgkin-Huxley Neurons With Homeostatic Plasticity	50
Side-Input GaAs Laser Power Converters With Gradient AlGaAs Waveguide	49

Design Strategy to Improve Memory Window in Ferroelectric Transistors With Oxide Semiconductor Channel	48
Front Cover	47
Table of contents	47
Table of Contents	45
Call for Papers: Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications"	44
Call for Papers: LAEDC 2023	44
EDS Meetings Calendar	44
High-Performance Floating Gate Heterostructure With WSe₂-MoS₂ Diode Channel for Neural Synapse	43
Physically Transient Diode With Ultrathin Tunneling Layer as Selector for Bipolar One Diode-One Resistor Memory	43
Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors	43
Table of Contents	42
Wide Band Gap Semiconductors for Automotive Applications	42
Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H Bonding	42
Front Cover	42
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications	40
IEEE Electron Device Letters Information for Authors	40
Table of Contents	40