OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 40. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)

Article	Citations
Blank Page	150
Table of Contents	95
Table of Contents	77
IEEE Electron Device Letters Publication Information	72
Table of Contents	67
Front Cover	63
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure	63
Blank Page	62
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric	60
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	58
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment	57
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	54
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	54
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer	54
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices	53
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration	53
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion	52
Changes to the Editorial Board	52
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode	52
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	52
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS	52
3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls	51
Au- and Ag-Containing Contacts to GaSb-Photovoltaic Converters	51
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning	49
RFIC 2023 Call for Papers	49

Table of Contents	48
EDS Meetings Calendar	47
IEEE Electron Device Letters information for authors	46
Blank Page	46
IEEE Electron Device Letters Information for Authors	46
Front Cover	45
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier	44
IEEE Electron Device Letters Information for Authors	43
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications	42
Table of Contents	42
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection	41
EDS Meetings Calendar	41
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors	41
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching	41
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics	40
La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2P_r~43.4 μ C/cm²) at 1.5 MV/Cm With 10¹⁰ Cycles Endurance	40
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application	40