OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 42. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)

Article	Citations
Table of Contents	107
IEEE Electron Device Letters Publication Information	94
Table of Contents	77
Front Cover	76
Blank Page	70
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	69
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	68
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	66
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices	66
Changes to the Editorial Board	65
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion	64
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning	63
RFIC 2023 Call for Papers	61
EDS Meetings Calendar	60
Table of Contents	60
Blank Page	58
IEEE Electron Device Letters Information for Authors	57
IEEE Electron Device Letters Information for Authors	57
Front Cover	57
Table of Contents	56
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications	54
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiN_x Passivation	52
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier	52
Guar Gum-WTe₂ Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity	52
Self-Powered a-SnO_x/c-Ga₂O₃ Pn Heterojunction Solar-Blind Photodetector With High Responsivity and Swift Response Speed	50

Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	50
Hollow Cylindrical Micro-LEDs: Enabling High-Brightness Quantum Dots-Based Color Conversion for Full-Color Displays	49
EDS Meetings Calendar	48
Influence of Annealing Temperature on ZrO₂ Nanoparticles for Improved Photodetection	48
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection	47
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film	46
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption	46
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes	46
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer	45
Demonstration of a Scalable Magnetron Array Through Extracavity Coupling	45
Front Cover	44
In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance	44
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs	44
La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2P_r~43.4 μ C/cm²) at 1.5 MV/Cm With 10¹⁰ Cycles Endurance	43
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application	43
Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors	43
A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology	42
New Insights Into Low-Temperature Thermal Stability and PBTI in Back-Gated IGZO/HfO ₂ Transistors Related to Oxygen Migration	42