OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 41. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)

Article	Citations
Blank Page	159
Table of Contents	99
Table of Contents	78
IEEE Electron Device Letters Publication Information	78
Table of Contents	71
Front Cover	69
Blank Page	65
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	64
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	64
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	63
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration	59
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	59
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices	59
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS	58
Changes to the Editorial Board	58
Au- and Ag-Containing Contacts to GaSb-Photovoltaic Converters	56
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion	56
RFIC 2023 Call for Papers	55
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning	55
Table of Contents	54
EDS Meetings Calendar	54
Blank Page	53
Front Cover	52
IEEE Electron Device Letters Information for Authors	52
Table of Contents	52

IEEE Electron Device Letters Information for Authors	52
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications	50
On the Dynamic R_ON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers	48
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching	48
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric Hf_xZr_1-xO₂ FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Lay	47
Influence of Annealing Temperature on ZrO₂ Nanoparticles for Improved Photodetection	47
EDS Meetings Calendar	46
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors	45
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection	45
La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2P_r~43.4 μ C/cm²) at 1.5 MV/Cm With 10¹⁰ Cycles Endurance	45
BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit	43
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film	43
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes	43
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption	43
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr₃ Perovskite Nanocrystals	41
Guar Gum-WTe₂ Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity	41
Modeling of a Multi-Gigawatt Ka-Band Superradiant Source With a Slow Traveling Wave	41