IEEE Electron Device Letters

Papers
(The TQCC of IEEE Electron Device Letters is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
Blank Page159
Table of Contents99
IEEE Electron Device Letters Publication Information78
Table of Contents78
Table of Contents71
Front Cover69
Blank Page65
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film64
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias64
Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate63
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices59
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration59
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence59
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS58
Changes to the Editorial Board58
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion56
Au- and Ag-Containing Contacts to GaSb-Photovoltaic Converters56
RFIC 2023 Call for Papers55
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning55
EDS Meetings Calendar54
Table of Contents54
Blank Page53
Table of Contents52
IEEE Electron Device Letters Information for Authors52
Front Cover52
IEEE Electron Device Letters Information for Authors52
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications50
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers48
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching48
Influence of Annealing Temperature on ZrO2 Nanoparticles for Improved Photodetection47
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Lay47
EDS Meetings Calendar46
La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2Pr~43.4 μ C/cm2) at 1.5 MV/Cm With 1010 Cycles Endurance45
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors45
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection45
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes43
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption43
BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit43
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film43
Modeling of a Multi-Gigawatt Ka-Band Superradiant Source With a Slow Traveling Wave41
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr3 Perovskite Nanocrystals41
Guar Gum-WTe2 Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity41
High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel40
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation40
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier40
Hollow Cylindrical Micro-LEDs: Enabling High-Brightness Quantum Dots-Based Color Conversion for Full-Color Displays40
Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System40
Axisymmetric Transformer in Glass IPD Technology and Its Application to Miniaturized On-Chip Bandpass Filters39
Lateral rutile GeO 2 MOSFET devices on single-crystal r-GeO 2 substrates39
The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy38
Front Cover38
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors38
Linear V FB Modulation and Interface Improvement in La 2 O 3 38
Flexible Organic Optoelectronic Devices for Neuromorphic Computing38
A Single-Chip Wafer-Level Packaged SR-Crossbar RF MEMS Switch Matrix38
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors37
Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory37
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices37
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer36
Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors36
Advanced Surface Acoustic Wave Resonators on LiTaO₃/SiO₂/Sapphire Substrate36
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique36
A Paper-Based Iontronic Capacitive Pressure Sensor for Human Muscle Motion Monitoring35
Demonstration of a Scalable Magnetron Array Through Extracavity Coupling35
A Fully Printed ZnO Memristor Synaptic Array for Neuromorphic Computing Application35
High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel35
Reproducible High-Performance Deep-UV Photovoltaic Photodetectors Based on Solution-Processed Ga 2 O 3 34
β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters34
3D-Stacked 2T0C-DRAM Cells Using Al2O3/TiO2-Based 2DEG FETs34
Thermal Characterization and Design of AlN/GaN/AlN HEMTs on Foreign Substrates34
In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance34
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode34
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs33
CMOS-Compatible Artificial Optoelectronic Synapse for Neuromorphic Computing33
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs33
Multi-fin β-Ga 2 O 3 Vertical FinFET with Interfin Field Oxide Exhibiting a Breakdown Voltage of 133
High Performance UV-A Detector Using Axial n-ZnO/p-CuO p-n Junction Heterostructure Nanowire Arrays33
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure33
Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection33
3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls32
Spurious-Free S₁ Mode AlN/ScAlN-Based Lamb Wave Resonator With Trapezoidal Electrodes32
Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation32
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM32
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment32
Design and Experimental Research of a Compact Ku-Band Triaxial Klystron Amplifier With Low Seed Injection Power32
A New Device Structure Yttria-Stabilized Zirconia-Based Mixed Potential Gas Sensor for Volatile Organic Compounds Gas Classification32
Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress32
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application32
Localized Thermal Effect Enhanced NBTI in Multifin pFinFETs Under Low Drain Bias31
Highly-Sensitive, Flexible, and Self-Powered UV Photodetectors Based on Perovskites Cs₃Cu₂I₅/ PEDOT: PSS Heterostructure31
A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology31
Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform31
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics31
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric31
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer30
High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization30
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric30
Characteristics of Hybrid Structured Organic Light-Emitting Diodes Display: Coupled Rigidity With Flexibility30
Terahertz Electronic Metadevices: Principles Behind the Ultra-High Cutoff Frequency30
Toward the Measurement of Microwave Electric Field Using Cesium Vapor MEMS Cell30
IEEE Electron Device Letters Information for Authors29
Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction29
Laser-Driven White Light Source With High Luminescence Saturation Through Reflective Color Converter29
Tunable Synaptic Transistor With Volatile and Non-Volatile Switching Capabilities for Hierarchical Data Processing29
Table of Contents29
Electrostatic Vibration Energy Harvester With a Self-Rechargeable Electret29
IEEE Transactions on Electron Devices Table of Contents29
Blank Page29
RF Performance of Stacked Si Nanosheets/Nanowires29
Self-Powered a-SnOx/c-Ga2O3 Pn Heterojunction Solar-Blind Photodetector With High Responsivity and Swift Response Speed29
Front Cover29
ICTMS-The Measurement Conference29
EDS Meetings Calendar28
Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits28
Blank Page28
A Novel Approach for Large-Scale Fabrication of Nanoscale Vacuum Electronic Devices With High Compatibility and Controllability28
Perovskite/InGaZnO-Based Reconfigurable Optoelectronic Device28
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices28
Low-Power CMOS Inverter Using Homogeneous Monolayer WSe₂ Channel With Polarity Control28
SnS/PEDOT:PSS Heterostructure-Based High Performance UV-Visible Photodetectors28
Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode28
High-Voltage, CMOS-Enabled, and Silicon Wire Array Decorated Photovoltaic Module for Driving Smart Dimming Glasses28
Experiments of Sub-Micron Superjunction Devices With Ultra-Low Specific On-Resistance28
Bilayer Metal Oxide Channel Thin Film Transistor With Flat Interface Based on Smooth Transparent Nanopaper Substrate28
Call for Papers for Special Issue on Production-Level Artificial Intelligence Applications in Semiconductor Manufacturing28
Manufacturing-Friendly SOT-MTJ Device With High Reliability and Switching Efficiency28
Novel Adjustable Self-Compensation Flipped Voltage Follower of ZnO TFTs for Transparent Pixel Circuits28
Intelligent Dual-Mode Photodetector Based on Relaxor Ferroelectric PMN-PT Single Crystal28
High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes27
Mitigate IR-Drop Effect by Modulating Neuron Activation Functions for Implementing Neural Networks on Memristor Crossbar Arrays27
GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics27
High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter27
High-Temperature Operation of Al0.5Ga0.5N/AlN Solar-Blind Phototransistor With Built-In Polarization Photogate27
Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure27
Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10627
High Quality Factor and Low Motional Impedance Aluminum Nitride Tuning Fork Resonators Vibrating in In-Plane Flexural Mode27
Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function27
Assessing Copper High Density-TSVs for Reliable Performance in Cryogenic Systems27
VFB Tuning and Dit Modulation Using LaFMD and Al2O3 Dual Dipoles in PMOS Stacked Nanowire Transistors27
Study of Vₜₕ Instability During Recovery After Off-State Stress in p-GaN HEMT26
Anisotropic Two-Dimensional Perovskite Single Crystal for Improved X-Ray Detection Performance26
Operation of AlGaN channel HEMTs at 850°C with ON/OFF ratio >10 426
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue26
Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm2 UV Detection26
Exploration of Analog Signal Modulation With Complementary Field-Effect Transistor (CFET)26
Bimodal Bioinspired Sensory Neuron With Tactile and Visual Perceptual Capabilities26
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes26
A Flexible Organic Electrochemical Synaptic Transistor With Dopamine-Mediated Plasticity26
Miniaturized ScAlN bimorph MEMS Microphone with Windmill Structure Achieving 61.2 dB SNR26
IEEE Transactions on Electron Devices Table of Contents26
Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor25
Novel Bulk Homogenization Field Devices With Reducing Process Difficulty25
Extended Single-Sided Row Hammer in DRAM: Concept and Physical Mechanism Analysis25
High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion25
Study on Improving Efficiency of Perovskite Solar Cells Through Controlling Humidity Conditions and Nickel Oxide Composition25
Development of Low Cost Glass-Based Deep Trench Capacitor for 3D Packaging25
A High-Speed True Random Number Generator Based on Unified Selector-RRAM25
Semitransparent Perovskite Solar Cells With Dielectric-Metal-Dielectric Electrode Passivated by Antioxidant Dibutylhydroxytoluene25
High-Temperature Deep Ultraviolet Photodetector Based on a Crystalline Ga₂O₃-Diamond Heterostructure25
Effect of Optical Pulsewidth on Transition From Linear to Nonlinear Mode of GaAs PCSS24
Table of Contents24
Development of Compact Millimeter-Wave Antenna by Stacking of Five Glass Wafers With Through Glass Vias24
Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs With Pre-Strained Structure at Positive Bias24
3326-V Modulation-Doped Diamond MOSFETs24
High Selectivity Millimeter-Wave On-Chip Band-Pass Filter With Semi-Lumped Dual-Mode Resonator by Using GaAs Technology24
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers24
A Low-Loss Wideband SAW Filter With Low Drift Using Multilayered Structure24
HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications24
Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy24
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability24
Table of Contents24
The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors24
Low-Loss N79 Band SAW Filter With 16.0% FBW Based on15° Y-X LiNbO₃/SiC Structure24
Scheme for Multi-Chiplet Integration With Low Thermal Budget by Asymmetric Cu-Cu Bonding With Au Passivation Bonding Structure24
Blank Page23
Table of Contents23
Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)23
Ultrathin Multilayer P(VDF-TrFE) Film-Based Piezoelectric Resonator for High-Quality Under-Display Fingerprint Recognition23
Current Temperature Stress Induced Threshold Degradation on Corbino a-InGaZnO Transistors23
IIRW 2023 Call for Papers23
Role of Solar Cells in Global Energy Transformation23
High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer23
Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-x as Quantum Well Infrared Photodetectors23
31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation23
Table of Contents23
Blank Page23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes23
5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer23
Initial Demonstration of an Inductive Vibrating Ring Gyroscope Fabricated From Fused Silica22
Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process22
Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications22
Backgated Graphene Varactors With Quality Factor–Frequency Product Above 300 GHz22
In-Memory Nearest Neighbor Search With Nanoelectromechanical Ternary Content-Addressable Memory22
Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier22
Iso-Potential Guard Ring Engineered 4H-SiC Soft X-Ray Photon Counting Detector With Room-Temperature Energy Spectroscopy Capability22
Scale-Invariant Nature of Space Charge Oscillations in Electron-Beam-Driven Diodes22
Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics22
Unraveling the Discrepancy on Persistent Photoconductivity Between Organic Single-Crystal and Thin-Film Phototransistors22
An On-Chip Fractally Chipped FBAR Filter With Ba-Zn-Fe-Sc-O Thin Film in 5G-FR2 Millimeter-Wave Band22
Engineering Ferroelectric Gate Dielectric to Achieve High-Performance Multilevel Organic Transistor Nonvolatile Memories With the Programming/Erasing Voltages Below 10 V22
Novel G-Band Slot-Loaded Folded Waveguide Traveling Wave Tube22
Front Cover22
Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts22
Design and Cold-Test Measurement of a Novel Metamaterial Assisted Dual-Band Slow Wave Structure22
Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments22
RF Characterization of Ferroelectric MOS Capacitors22
Ferroelectric Transistor With Grooved Structure for Reliable Multi-Level Characteristics22
Extremely Low Switching Current STT-MRAM Device With Double Spin Transfer Torque22
MetaRGBX-Net: RGB Sensitivity and Cross-Talk Prediction in CMOS Image Sensor22
Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer22
Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode21
3D SRAM Using Ultrathin Body Nanosheets and Bitline Signal Decoupling21
Double Buried Oxide Trap-Rich Substrates for High Frequency Applications21
Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation21
Self-Powered Nano Pt/Amorphous Ga₂O₃/Crystalline CuCrO₂ Heterostructure Solar-Blind Photodetector With High Responsivity and Detectivity21
Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device21
Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors21
Nonvolatile Ferroelectric LiNbO3 Domain Wall Crossbar Memory21
CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing21
SnS₂/WSe₂ van der Waals Single-Detector Spectrometer With a Dynamically Selecting Spectral Reconstruction Strategy21
Anticipative Objective Tracking With Short-Term Memristive Synapses21
A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide21
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line21
Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂21
Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET21
Enhancement-Mode GaN Monolithic Bidirectional Switch With Integrated Gate Driver for High Temperature Application21
Ultrafast-Speed MoS₂/CuO Photodetector Based on Strongly Coupled Heterojunction21
Controllable p-Type Doping of 2D WSe 2 pFET by Engineered Surface Charge Transfer Doping With Metal Co-Seeding20
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell20
Nano-welded lead-free Ag 2 BiI 5 perovskite microcrystals enable ultrasensitive self-powered photo20
Impact of CF4/O2 Plasma Passivation on Endurance Performance of Zr-Doped HfO2 Ferroelectric Film20
Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O₂20
Table of Contents20
One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time20
A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbOₓ/Pt Memristor20
Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack20
Orthogonal-Bulk-Spin-Orbit-Torque Device for All-Electrical In-Memory Computing20
Yttrium Doped Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Capacitor Exhibiting Fatigue Free (>10₁₂ Cycles), Long Retention, and Imprint Immune Performance at 4 K20
Ultra-Low Power, Emission Gate Driver With Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors20
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications"20
Experimental Demonstration of Coupled Sub-Harmonic Injection Locked Oscillation in Micro-Electro-Mechanical Relays20
Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction20
P-GaN/AlGaN/GaN Fin-HEMT With High Saturation Current and Enhanced VTH Stability20
High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer20
Radiation Damage Mechanisms in β -Ga₂O₃ MSM Solar-Blind Photodetectors: Insights From Proton, Neutron, and γ 20
Electro-Thermal Confinement Enables Improved Superlattice Phase Change Memory20
Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing20
IEEE Electron Device Letters information for authors20
Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs 20
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications"20
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