IEEE Electron Device Letters

Papers
(The TQCC of IEEE Electron Device Letters is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
Blank Page150
Table of Contents95
Table of Contents77
IEEE Electron Device Letters Publication Information72
Table of Contents67
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure63
Front Cover63
Blank Page62
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric60
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias58
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment57
Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate54
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer54
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film54
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration53
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices53
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode52
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence52
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS52
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion52
Changes to the Editorial Board52
3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls51
Au- and Ag-Containing Contacts to GaSb-Photovoltaic Converters51
RFIC 2023 Call for Papers49
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning49
Table of Contents48
EDS Meetings Calendar47
IEEE Electron Device Letters information for authors46
Blank Page46
IEEE Electron Device Letters Information for Authors46
Front Cover45
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier44
IEEE Electron Device Letters Information for Authors43
Table of Contents42
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications42
EDS Meetings Calendar41
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors41
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching41
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection41
La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2Pr~43.4 μ C/cm2) at 1.5 MV/Cm With 1010 Cycles Endurance40
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application40
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics40
Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation39
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption38
Demonstration of a Scalable Magnetron Array Through Extracavity Coupling37
In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance37
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film37
Laser-Driven White Light Source With High Luminescence Saturation Through Reflective Color Converter37
Terahertz Electronic Metadevices: Principles Behind the Ultra-High Cutoff Frequency37
A Fully Printed ZnO Memristor Synaptic Array for Neuromorphic Computing Application37
Advanced Surface Acoustic Wave Resonators on LiTaO₃/SiO₂/Sapphire Substrate37
Toward the Measurement of Microwave Electric Field Using Cesium Vapor MEMS Cell37
Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress36
BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit36
β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters35
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes35
High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization35
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric35
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique34
Thermal Characterization and Design of AlN/GaN/AlN HEMTs on Foreign Substrates34
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr3 Perovskite Nanocrystals34
3D-Stacked 2T0C-DRAM Cells Using Al2O3/TiO2-Based 2DEG FETs34
Characteristics of Hybrid Structured Organic Light-Emitting Diodes Display: Coupled Rigidity With Flexibility34
Guar Gum-WTe2 Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity34
Electrostatic Vibration Energy Harvester With a Self-Rechargeable Electret34
Front Cover33
Design and Experimental Research of a Compact Ku-Band Triaxial Klystron Amplifier With Low Seed Injection Power33
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM33
Hollow Cylindrical Micro-LEDs: Enabling High-Brightness Quantum Dots-Based Color Conversion for Full-Color Displays33
Modeling of a Multi-Gigawatt Ka-Band Superradiant Source With a Slow Traveling Wave33
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation33
A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology33
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors32
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices32
The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy32
Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection32
Localized Thermal Effect Enhanced NBTI in Multifin pFinFETs Under Low Drain Bias32
A Single-Chip Wafer-Level Packaged SR-Crossbar RF MEMS Switch Matrix32
Flexible Organic Optoelectronic Devices for Neuromorphic Computing32
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors31
Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction31
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs31
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs31
Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory30
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers30
Reproducible High-Performance Deep-UV Photovoltaic Photodetectors Based on Solution-Processed Ga 2 O 3 30
Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors30
High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel30
A New Device Structure Yttria-Stabilized Zirconia-Based Mixed Potential Gas Sensor for Volatile Organic Compounds Gas Classification29
Highly-Sensitive, Flexible, and Self-Powered UV Photodetectors Based on Perovskites Cs₃Cu₂I₅/ PEDOT: PSS Heterostructure29
High Performance UV-A Detector Using Axial n-ZnO/p-CuO p-n Junction Heterostructure Nanowire Arrays29
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Lay29
Linear VFB Modulation and Interface Improvement in La2O3 Dipole-first Gate Stack via TMA Pre-Treatment Without EOT Deterioration29
A Paper-Based Iontronic Capacitive Pressure Sensor for Human Muscle Motion Monitoring29
Spurious-Free S₁ Mode AlN/ScAlN-Based Lamb Wave Resonator With Trapezoidal Electrodes29
Influence of Annealing Temperature on ZrO2 Nanoparticles for Improved Photodetection29
Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System29
Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform29
Self-Powered a-SnOx/c-Ga2O3 Pn Heterojunction Solar-Blind Photodetector With High Responsivity and Swift Response Speed29
High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel29
IEEE Electron Device Letters28
IEEE Electron Device Letters Information for Authors28
Table of Contents28
High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion28
IEEE Transactions on Electron Devices Table of Contents28
ICTMS-The Measurement Conference28
Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs With Pre-Strained Structure at Positive Bias28
Effect of Optical Pulsewidth on Transition From Linear to Nonlinear Mode of GaAs PCSS28
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer28
Front Cover28
Blank Page28
RF Performance of Stacked Si Nanosheets/Nanowires28
Experiments of Sub-Micron Superjunction Devices With Ultra-Low Specific On-Resistance27
Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function27
Low-Power CMOS Inverter Using Homogeneous Monolayer WSe₂ Channel With Polarity Control27
Tunable Synaptic Transistor With Volatile and Non-Volatile Switching Capabilities for Hierarchical Data Processing27
EDS Meetings Calendar27
Bilayer Metal Oxide Channel Thin Film Transistor With Flat Interface Based on Smooth Transparent Nanopaper Substrate27
Origin of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress27
Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm2 UV Detection27
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices27
Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits27
Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy26
Call for Papers for Special Issue on Production-Level Artificial Intelligence Applications in Semiconductor Manufacturing26
Blank Page26
Manufacturing-Friendly SOT-MTJ Device With High Reliability and Switching Efficiency26
A Low-Loss Wideband SAW Filter With Low Drift Using Multilayered Structure26
Study on Improving Efficiency of Perovskite Solar Cells Through Controlling Humidity Conditions and Nickel Oxide Composition26
Exploration of Analog Signal Modulation with Complementary Field-Effect Transistor (CFET)26
Semitransparent Perovskite Solar Cells With Dielectric-Metal-Dielectric Electrode Passivated by Antioxidant Dibutylhydroxytoluene26
A Novel Approach for Large-Scale Fabrication of Nanoscale Vacuum Electronic Devices With High Compatibility and Controllability26
SnS/PEDOT:PSS Heterostructure-Based High Performance UV-Visible Photodetectors26
Novel Bulk Homogenization Field Devices With Reducing Process Difficulty26
Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode26
GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics25
High-Voltage, CMOS-Enabled, and Silicon Wire Array Decorated Photovoltaic Module for Driving Smart Dimming Glasses25
Anisotropic Two-Dimensional Perovskite Single Crystal for Improved X-Ray Detection Performance25
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue25
A High-Speed True Random Number Generator Based on Unified Selector-RRAM25
Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure25
Novel Adjustable Self-Compensation Flipped Voltage Follower of ZnO TFTs for Transparent Pixel Circuits25
Kudos to Our Golden Reviewers25
Assessing Copper High Density-TSVs for Reliable Performance in Cryogenic Systems25
VFB Tuning and Dit Modulation Using LaFMD and Al2O3 Dual Dipoles in PMOS Stacked Nanowire Transistors25
Study of Vₜₕ Instability During Recovery After Off-State Stress in p-GaN HEMT25
Low-Loss N79 Band SAW Filter With 16.0% FBW Based on15° Y-X LiNbO₃/SiC Structure25
Perovskite/InGaZnO-Based Reconfigurable Optoelectronic Device25
Intelligent Dual-Mode Photodetector Based on Relaxor Ferroelectric PMN-PT Single Crystal25
Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor25
A Flexible Organic Electrochemical Synaptic Transistor With Dopamine-Mediated Plasticity25
Mitigate IR-Drop Effect by Modulating Neuron Activation Functions for Implementing Neural Networks on Memristor Crossbar Arrays25
High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter25
High-Temperature Operation of Al0.5Ga0.5N/AlN Solar-Blind Phototransistor With Built-In Polarization Photogate24
High Selectivity Millimeter-Wave On-Chip Band-Pass Filter With Semi-Lumped Dual-Mode Resonator by Using GaAs Technology24
Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10624
High Quality Factor and Low Motional Impedance Aluminum Nitride Tuning Fork Resonators Vibrating in In-Plane Flexural Mode24
High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes24
Extended Single-Sided Row Hammer in DRAM: Concept and Physical Mechanism Analysis24
IEEE Transactions on Electron Devices Table of Contents24
Development of Low Cost Glass-Based Deep Trench Capacitor for 3D Packaging24
Bimodal Bioinspired Sensory Neuron With Tactile and Visual Perceptual Capabilities24
3326-V Modulation-Doped Diamond MOSFETs24
The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors24
High-Temperature Deep Ultraviolet Photodetector Based on a Crystalline Ga₂O₃-Diamond Heterostructure24
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability24
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers23
Blank Page23
Table of Contents23
Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack23
Development of Compact Millimeter-Wave Antenna by Stacking of Five Glass Wafers With Through Glass Vias23
Table of Contents23
Blank Page23
IIRW 2023 Call for Papers23
HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications23
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes23
Table of Contents23
Table of Contents23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes23
Role of Solar Cells in Global Energy Transformation23
Scheme for Multi-Chiplet Integration With Low Thermal Budget by Asymmetric Cu-Cu Bonding With Au Passivation Bonding Structure23
Anticipative Objective Tracking With Short-Term Memristive Synapses22
P-GaN/AlGaN/GaN Fin-HEMT With High Saturation Current and Enhanced VTH Stability22
Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-x as Quantum Well Infrared Photodetectors22
Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications22
Current Temperature Stress Induced Threshold Degradation on Corbino a-InGaZnO Transistors22
31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation22
5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer22
A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide22
RF Characterization of Ferroelectric MOS Capacitors22
Impact of CF4/O2 Plasma Passivation on Endurance Performance of Zr-Doped HfO2 Ferroelectric Film22
High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer22
Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)22
Ultrathin Multilayer P(VDF-TrFE) Film-Based Piezoelectric Resonator for High-Quality Under-Display Fingerprint Recognition22
Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments22
3D SRAM Using Ultrathin Body Nanosheets and Bitline Signal Decoupling22
In-Memory Nearest Neighbor Search With Nanoelectromechanical Ternary Content-Addressable Memory21
An Image Memory Logic Unit Inspired by Human Retina21
Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors21
Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics21
Iso-Potential Guard Ring Engineered 4H-SiC Soft X-Ray Photon Counting Detector with Room-Temperature Energy Spectroscopy Capability21
Novel G-Band Slot-Loaded Folded Waveguide Traveling Wave Tube21
Scale-Invariant Nature of Space Charge Oscillations in Electron-Beam-Driven Diodes21
A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbOₓ/Pt Memristor21
Nonvolatile Ferroelectric LiNbO3 Domain Wall Crossbar Memory21
An On-Chip Fractally Chipped FBAR Filter With Ba-Zn-Fe-Sc-O Thin Film in 5G-FR2 Millimeter-Wave Band21
Backgated Graphene Varactors With Quality Factor–Frequency Product Above 300 GHz21
Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode21
Design and Cold-Test Measurement of a Novel Metamaterial Assisted Dual-Band Slow Wave Structure21
Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer21
Front Cover21
Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device21
Engineering Ferroelectric Gate Dielectric to Achieve High-Performance Multilevel Organic Transistor Nonvolatile Memories With the Programming/Erasing Voltages Below 10 V21
Initial Demonstration of an Inductive Vibrating Ring Gyroscope Fabricated From Fused Silica21
Unraveling the Discrepancy on Persistent Photoconductivity Between Organic Single-Crystal and Thin-Film Phototransistors21
Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process21
Controllable p-type doping of 2D WSe2 pFET by engineered surface charge transfer doping with metal co-seeding21
Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing21
Extremely Low Switching Current STT-MRAM Device With Double Spin Transfer Torque20
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell20
Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂20
Self-Powered Nano Pt/Amorphous Ga₂O₃/Crystalline CuCrO₂ Heterostructure Solar-Blind Photodetector With High Responsivity and Detectivity20
Ultra-Low Power, Emission Gate Driver With Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors20
Yttrium Doped Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Capacitor Exhibiting Fatigue Free (>10₁₂ Cycles), Long Retention, and Imprint Immune Performance at 4 K20
MetaRGBX-Net: RGB Sensitivity and Cross-Talk Prediction in CMOS Image Sensor20
Ferroelectric Transistor With Grooved Structure for Reliable Multi-Level Characteristics20
SnS₂/WSe₂ van der Waals Single-Detector Spectrometer With a Dynamically Selecting Spectral Reconstruction Strategy20
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line20
Radiation Damage Mechanisms in β -Ga₂O₃ MSM Solar-Blind Photodetectors: Insights From Proton, Neutron, and γ 20
High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer20
Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET20
One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time20
Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs 20
Electro-Thermal Confinement Enables Improved Superlattice Phase Change Memory20
Double Buried Oxide Trap-Rich Substrates for High Frequency Applications20
Enhancement-Mode GaN Monolithic Bidirectional Switch With Integrated Gate Driver for High Temperature Application20
Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts20
Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation20
Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier20
Table of Contents19
Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O₂19
Digital Microfluidic Lab-on-a-Chip on a TFT Glass Substrate Enabling Point-of-Care Testing19
Changes to the Editorial Board19
Orthogonal-Bulk-Spin-Orbit-Torque Device for All-Electrical In-Memory Computing19
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications"19
Vertical AND-Type Flash TFT Array Capable of Accurate Vector-Matrix Multiplication Operations for Hardware Neural Networks19
Blank Page19
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications"19
Enhancing High-Voltage Stability of CsPbBr₃ Radiation Detectors Through Surface Treatment and Electrode Replacement19
Experimental Demonstration of Coupled Sub-Harmonic Injection Locked Oscillation in Micro-Electro-Mechanical Relays19
Experimental Testing of the European TH1509U 170-GHz 1-MW CW Industrial Gyrotron—Long Pulse Operation19
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