IEEE Electron Device Letters

Article	Citations
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage	159
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles	125
60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology	117
High-k Oxide Field-Plated Vertical (001) β-Ga2O3Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2	93
Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons	91
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm	91
All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology	80
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate	79
Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure	78
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC	76
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz	69
Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder	69
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination	68
Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing	66
2D MoS2-Based Threshold Switching Memristor for Artificial Neuron	65
Low-Power Artificial Neurons Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing	62
10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes	62
Large Coupling Acoustic Wave Resonators Based on LiNbO₃/SiO₂/Si Functional Substrate	59
p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability	58
Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films	58
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm	55
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy	55
Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs	53
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²	52
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers	51

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching	50
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity	49
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz	49
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V	49
High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays	49
2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension	48
CW Operation of a W-Band High-Gain Helical-Waveguide Gyrotron Traveling-Wave Tube	47
360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications	46
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band	46
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT	45
Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction	45
Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes	44
High Figure-of-Merit Lamb Wave Resonators Based on Al0.7Sc0.3N Thin Film	43
Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs	42
Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier	42
A G-Band Traveling Wave Tube With 20 W Continuous Wave Output Power	41
Artificial Nociceptor Using 2D MoS2 Threshold Switching Memristor	41
High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection	41
Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination	40
A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power	40
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors	40
Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC	40
High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination	40
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process	40
Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors	40
Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States	39
Highly Sensitive and Flexible Piezoresistive Pressure Sensors Based on 3D Reduced Graphene Oxide Aerogel	39
Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory	38
One-Volt, Solution-Processed InZnO Thin-Film Transistors	38
High On-State Current in Chemical Vapor Deposited Monolayer MoS2nFETs With Sn Ohmic Contacts	37
Gate-Controllable Electronic Trap Detection in Dielectrics	37
Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET	37
Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current	37
345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond	37
Demonstration of a Pulsed G-Band 50-W Traveling Wave Tube	37
Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability	36
Deep-Learning-Assisted Physics-Driven MOSFET Current-Voltage Modeling	36
Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application	35
Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing	35
Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques	35
Thin-Film Photodetector Optimization for High-Performance Short-Wavelength Infrared Imaging	35
High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process	35
Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire	34
Logic Compatible High-Performance Ferroelectric Transistor Memory	34
Uncovering the Anisotropic Electronic Structure of 2D Group VA-VA Monolayers for Quantum Transport	34
Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs	34
606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%	34
Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs	34
Pixel Circuit With P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation	34
AND Flash Array Based on Charge Trap Flash for Implementation of Convolutional Neural Networks	34

Technological Design of 3D NAND-Based Compute-in-Memory Architecture for GB-Scale Deep Neural Network	33
Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters	33
Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application	33
HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability	33
Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency	33
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band	32
Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET	32
Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess	32
Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching	31
Demonstration of a Selective Oversized Cavity in a Terahertz Second-Harmonic Gyrotron	31
High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics	31
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors	31
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density	31
A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators	31
Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing	30
High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory	30
31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors	29
Novel S-Band Metamaterial Extended Interaction Klystron	29
High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process	28
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2	28
A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance	28
GaN-Based High-Response Frequency and High-Optical Power Matrix Micro-LED for Visible Light Communication	28
Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET	28
Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging	28
Self-Heating and Electrothermal Properties of Advanced Sub-5-nm Node Nanoplate FET	28
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs	28
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts	27
A High-Performance Mode-Localized Accelerometer Employing a Quasi-Rigid Coupler	27
Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)	27
A Sub-1-V, Microwatt Power-Consumption Iontronic Pressure Sensor Based on Organic Electrochemical Transistors	27
Giant Piezoelectricity of Janus M₂SeX (M = Ge, Sn; X = S, Te) Monolayers	26
Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel	26
ZrN-Based Flexible Resistive Switching Memory	26
Fast-Response Amorphous Ga₂O₃ Solar-Blind Ultraviolet Photodetectors Tuned by a Polar AlN Template	26
High-Overtone Thin Film Ferroelectric AlScN-on-Silicon Composite Resonators	26
Stable Operation of a Repetitively Pulsed X-Band Relativistic Backward Wave Oscillator	25
Self-Aligned E-Mode GaN p-Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷	25
Frequency-Enabled Decouplable Dual-Modal Flexible Pressure and Temperature Sensor	25
High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage	25
Intrinsically Switchable Ferroelectric Scandium Aluminum Nitride Lamb-Mode Resonators	25
C-Plane Blue Micro-LED With 1.53 GHz Bandwidth for High-Speed Visible Light Communication	25
Solid-State Synthesized BiFeO3 Perovskite-Based Fast-Response White-Light Photodetector	25
Lifetime Prediction of Ultraviolet Light-Emitting Diodes Using a Long Short-Term Memory Recurrent Neural Network	25
Piezoelectric Micromachined Ultrasonic Transducer With Superior Acoustic Outputs for Pulse-Echo Imaging Application	24
Principal Enhancement of THz-Range Gyrotron Parameters Using Injection Locking	24
On-Chip Millimeter-Wave Integrated Absorptive Bandstop Filter in (Bi)-CMOS Technology	24
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs	24
70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency	24
Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal	24
Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing	24
Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer	24
Engineering Hf0.5Zr0.5O2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constant	24
Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film	24
Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications	23
A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbOₓ/Pt Memristor	23
Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality	23
Demonstration of a High-Power and Wide-Bandwidth G-Band Traveling Wave Tube With Cascade Amplification	23
Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications	23
A Rate-Integrating Honeycomb Disk Resonator Gyroscope With 0.038°/h Bias Instability and °7000°/s Measurement Range	23
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer	23
High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination	23
A 0.19e- rms Read Noise 16.7Mpixel Stacked Quanta Image Sensor With 1.1 μm-Pitch Backside Illuminated Pixels	23
An Optoelectronic Reservoir Computing for Temporal Information Processing	23
RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure	23
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors	22
LiF/Al₂O₃ as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond	22
Capacitor-Based Synaptic Devices for Hardware Spiking Neural Networks	22
High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm	22
Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage	22
Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices	22
Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si	22
Sensing Performance of SO₂, SO₃ and NO₂ Gas Molecules on 2D Pentagonal PdSe₂: A First-Principle Study	22
A Single Transistor Neuron With Independently Accessed Double-Gate for Excitatory-Inhibitory Function and Tunable Firing Threshold Voltage	22
A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film	22
V₂C-Based Memristor for Applications of Low Power Electronic Synapse	22
Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure	22
Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping	21
Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array	21
Blue Molecular Emitter-Free and Doping-Free White Organic Light-Emitting Diodes With High Color Rendering	21
High Average Power Test of a W-Band Broadband Gyrotron Traveling Wave Tube	21

Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures	21
Pr0.7Ca0.3MnO3-Based Three-Terminal Synapse for Neuromorphic Computing	21
Improved DC and RF Performance of Novel MIS p-GaN-Gated HEMTs by Gate-All-Around Structure	21
Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing	21
Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating	21
1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination	21
A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode With a Spherically Uniform Electric Field Peak	21
High-Efficiency Phase-Locking of Millimeter-Wave Magnetron for High-Power Array Applications	21
Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design	21
3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure	21
Proof-of-Principle Experiment of a 20-kW-Average-Power Ka-Band Gyro-Traveling Wave Tube With a Cut-Off Waveguide Section	21
Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor	21
Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment	20
145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer	20
Antimonene: A Promising Candidate for SF₆ Decomposition Gas Sensors With High Sensitivity and High Stability	20
Flexible and Stretchable Ultrasonic Transducer Array Conformed to Complex Surfaces	20
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage	20
The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design	20
Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer	20
AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser	20
Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory	20
Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor	20
V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization	20
Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition	20
An Efficient Vircator With High Output Power and Less Drifting Electron Loss by Forming Multivirtual Cathodes	20
On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges	20
Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics	20
AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut	20
Continuous Wave Operation of a Ka-Band Broadband High-Power Sheet Beam Traveling-Wave Tube	19
Voltage-Controlled Spintronic Stochastic Neuron for Restricted Boltzmann Machine With Weight Sparsity	19
Multiterminal Ionic Synaptic Transistor With Artificial Blink Reflex Function	19
Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm	19
High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing	19
An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage	19
Minimum Contact Resistance in Monoelemental 2D Material Nanodevices With Edge-Contacts	19
β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters	19
Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact	19
Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices	19
High-Quality Film Bulk Acoustic Resonators Fabricated on AlN Films Grown by a New Two-Step Method	19
Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing	19
Unveiling the Apparent “Negative Capacitance” Effects Resulting From Pulse Measurements of Ferroelectric-Dielectric Bilayer Capacitors	19
High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High I ON/I OFF and High Threshold Voltage	19
Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors	19
Enhanced Responsivity of Diamond UV Detector Based on Regrown Lens Structure	19
Multilayered PdTe₂/GaN Heterostructures for Visible-Blind Deep-Ultraviolet Photodetection	19
A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide	18
Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing	18
Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses	18
AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz	18
A 250-Watts, 0.5-THz Continuous-Wave Second-Harmonic Gyrotron	18
Experimental Demonstration of NAND-Like Spin-Torque Memory Unit	18
Dual Buffer Layers for Developing Electrochemical Metallization Memory With Low Current and High Endurance	18
Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer	18
Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes	18
Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach	18
Acoustoelectric Non-Reciprocity in Lithium Niobate-on-Silicon Delay Lines	18
High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers	18
High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice	18
Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices	18
Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application	18
A Worst-Case Analysis of Trap-Assisted Tunneling Leakage in DRAM Using a Machine Learning Approach	18
Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs	18
16 × 16 Solar-Blind UV Detector Based on β-Ga2O3 Sensors	18
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse	18
Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi₂Te₃ Thermoelectric Interfacial Layer	18
Low Temperature Copper-Copper Bonding of Non-Planarized Copper Pillar With Passivation	18
A Monolayer Composite of h-BN Doped by a Nano Graphene Domain: As Sensitive Material for SO2 Gas Detection	18
10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C	17
Improved Endurance of Hf₀.₅Zr₀.₅O2-Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode	17
A Temperature-Stable and Low Impedance Piezoelectric MEMS Resonator for Drop-in Replacement of Quartz Crystals	17
Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing	17
Shield Gate Trench MOSFET With Narrow Gate Architecture and Low-k Dielectric Layer	17
Development of Compact Millimeter-Wave Antenna by Stacking of Five Glass Wafers With Through Glass Vias	17
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching	17
Single Silicon Neuron Device Enabling Neuronal Oscillation and Stochastic Dynamics	17
Millimeter-Wave Dual-Band Bandpass Filter With Large Bandwidth Ratio Using GaAs-Based Integrated Passive Device Technology	17
Automatic Selection of Structure Parameters of Silicon on Insulator Lateral Power Device Using Bayesian Optimization	17
Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process	17
A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current	17
Laterally Coupled 2D MoS2 Synaptic Transistor With Ion Gating	17
High-Performance, Vacuum-Free, and Self-Powered CsPbIBr2 Photodetectors Boosted by Ultra-Wide-Bandgap Ga2O3 Interlayer	17
Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation	17
GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage	17
Fully Solution-Processed ZnO Nanorod Array/PEDOT:PSS Heterojunction Photodetector for Ultraviolet Light	17
An Enhanced Tilted-Angle Acoustofluidic Chip for Cancer Cell Manipulation	17
Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer	17
Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function	16
Field Effect-Controlled Space-Charge Limited Emission Triode With Nanogap Channels	16
3D AND-Type Ferroelectric Transistors for Compute-in-Memory and the Variability Analysis	16
Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications	16
Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation	16
HfZrOₓ-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering	16
Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N2O Annealing	16
A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al0.72Sc0.28N	16
Low-Power Resistive Memory Integrated on III–V Vertical Nanowire MOSFETs on Silicon	16