OOIR: Observatory of International Research

Papers

(The TQCC of IEEE Electron Device Letters is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)

Article	Citations
Table of Contents	115
Table of Contents	83
IEEE Electron Device Letters Publication Information	83
Front Cover	77
Blank Page	75
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	74
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	74
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	70
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion	67
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning	66
RFIC 2023 Call for Papers	65
Table of Contents	64
EDS Meetings Calendar	62
Blank Page	61
IEEE Electron Device Letters Information for Authors	59
Front Cover	59
IEEE Electron Device Letters Information for Authors	56
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications	56
Table of Contents	56
EDS Meetings Calendar	55
Guar Gum-WTe₂ Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity	55
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier	55
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption	54
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection	54
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film	53

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes	52
Demonstration of a Scalable Magnetron Array Through Extracavity Coupling	51
New Insights Into Low-Temperature Thermal Stability and PBTI in Back-Gated IGZO/HfO ₂ Transistors Related to Oxygen Migration	50
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs	50
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application	50
Front Cover	50
Terahertz Electronic Metadevices: Principles Behind the Ultra-High Cutoff Frequency	49
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure	49
Axisymmetric Transformer in Glass IPD Technology and Its Application to Miniaturized On-Chip Bandpass Filters	48
Localized Thermal Effect Enhanced NBTI in Multifin pFinFETs Under Low Drain Bias	47
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for V_T Prediction Using Lateral Carrier Density Profiling Technique	45
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics	45
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment	45
Characteristics of Hybrid Structured Organic Light-Emitting Diodes Display: Coupled Rigidity With Flexibility	44
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching	44
High-Voltage β-Ga₂O₃ RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel	44
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors	44
A Low-Capacitance Long-Strip Electrode Design for Fast-Switching Vertical SiC PCSS	43
Symmetric Phase-Engineered Hf _1-x Zr _x O ₂ Enab	43
A Paper-Based Iontronic Capacitive Pressure Sensor for Human Muscle Motion Monitoring	42
P-Type SnO Thin-Film Transistor With Ultra-Thin Channel and Extremely High ON/OFF Current Ratio	42
3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls	41
Formation of 2–3 MeV, 100-ps High-Current Electron Bunches With Peak Power Above 40 GW Using an All-Solid-State Driver	41
The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy	40
EDS Meetings Calendar	40
Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction	39
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices	39
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS	39
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric Hf_xZr_1-xO₂ FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Lay	39
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode	39
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric	39
BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit	38
β-Ga₂O₃-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters	38
Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform	37
High Responsivity Optically-Triggered Vertical GaN Heterojunction Power Switches With kHz Operation	37
Monolithic 3-D Integration of IAZO/Si-Based 2T0C DRAM With RRAM for Monte Carlo Dropconnect Neural Networks	37
A Single-Chip Wafer-Level Packaged SR-Crossbar RF MEMS Switch Matrix	37
Flexible Organic Optoelectronic Devices for Neuromorphic Computing	36
Multi-Fin β -Ga ₂ O ₃ Vertical FinFET With Interfin	36
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM	36
High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel	36
Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress	36
Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection	36
3D-Stacked 2T0C-DRAM Cells Using Al₂O₃/TiO₂-Based 2DEG FETs	36
Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System	35
High-Reliability HfO₂/ZrO₂ Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization	35
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer	35
La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2P_r~43.4 μ C/cm²) at 1.5 MV/Cm With 10¹⁰ Cycles Endurance	35
Linear V _FB Modulation and Interface Improvement in La ₂ O ₃	35
Experimental Demonstration of Grid-Gate LDMOS With Ultra-Low R _on,sp and High HCI Robustness on 55-nm BCD Platform	35

Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors	34
Spurious-Free S₁ Mode AlN/ScAlN-Based Lamb Wave Resonator With Trapezoidal Electrodes	34
CMOS-Compatible Artificial Optoelectronic Synapse for Neuromorphic Computing	34
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric	34
Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation	33
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration	33
Modeling of a Multi-Gigawatt Ka-Band Superradiant Source With a Slow Traveling Wave	33
A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology	33
Excellent Ferroelectricity in 6 nm HZO with Sub-5 nm Nb Electrodes and Nb ₂ O ₅ Interface Engineer	33
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiN_x Passivation	33
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr₃ Perovskite Nanocrystals	33
Design and Experimental Research of a Compact Ku-Band Triaxial Klystron Amplifier With Low Seed Injection Power	33
Thermal Characterization and Design of AlN/GaN/AlN HEMTs on Foreign Substrates	33
Lateral Rutile GeO ₂ MOSFET Devices on Single-Crystal r-GeO ₂ Substrates	32
Hollow Cylindrical Micro-LEDs: Enabling High-Brightness Quantum Dots-Based Color Conversion for Full-Color Displays	32
Laser-Driven White Light Source With High Luminescence Saturation Through Reflective Color Converter	32
Advanced Surface Acoustic Wave Resonators on LiTaO₃/SiO₂/Sapphire Substrate	32
A New Device Structure Yttria-Stabilized Zirconia-Based Mixed Potential Gas Sensor for Volatile Organic Compounds Gas Classification	32
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices	32
Electrostatic Vibration Energy Harvester With a Self-Rechargeable Electret	32
2D Ambipolar Floating-Gate Optoelectronic Memories with Stable Nonvolatilely Programmable Photoresponse States	32
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	31
A Fully Printed ZnO Memristor Synaptic Array for Neuromorphic Computing Application	31
In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance	31
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors	31
On the Dynamic R_ON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers	31
Highly-Sensitive, Flexible, and Self-Powered UV Photodetectors Based on Perovskites Cs₃Cu₂I₅/ PEDOT: PSS Heterostructure	30
Blank Page	30
IEEE Electron Device Letters Information for Authors	30
Toward the Measurement of Microwave Electric Field Using Cesium Vapor MEMS Cell	30
Reproducible High-Performance Deep-UV Photovoltaic Photodetectors Based on Solution-Processed Ga ₂ O ₃	30
ICTMS-The Measurement Conference	30
Self-Powered a-SnO_x/c-Ga₂O₃ Pn Heterojunction Solar-Blind Photodetector With High Responsivity and Swift Response Speed	30
IEEE Transactions on Electron Devices Table of Contents	30
Table of Contents	30
Call for Papers for Special Issue on Production-Level Artificial Intelligence Applications in Semiconductor Manufacturing	29
E-Mode p-GaN/AlGaN/GaN HEMT With Diode-Engineered Gate Configuration for Extended Gate Voltage Swing	29
High Quality Factor and Low Motional Impedance Aluminum Nitride Tuning Fork Resonators Vibrating in In-Plane Flexural Mode	29
Exploration of Analog Signal Modulation With Complementary Field-Effect Transistor (CFET)	29
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices	29
Reverse Current Stress Induced Dynamic R_on of GaN HEMTs in Soft-Switching Mode	29
Novel Bulk Homogenization Field Devices With Reducing Process Difficulty	29
Blank Page	29
EDS Meetings Calendar	29
Table of Contents	29
Tunable Synaptic Transistor With Volatile and Non-Volatile Switching Capabilities for Hierarchical Data Processing	29
Semitransparent Perovskite Solar Cells With Dielectric-Metal-Dielectric Electrode Passivated by Antioxidant Dibutylhydroxytoluene	28
Bimodal Bioinspired Sensory Neuron With Tactile and Visual Perceptual Capabilities	28
Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10 ⁴	28
Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs With Pre-Strained Structure at Positive Bias	28
Miniaturized ScAlN Bimorph MEMS Microphone With Windmill Structure Achieving 61.2 dB SNR	28
SnS/PEDOT:PSS Heterostructure-Based High Performance UV-Visible Photodetectors	28
A High-Speed True Random Number Generator Based on Unified Selector-RRAM	28
High-Voltage, CMOS-Enabled, and Silicon Wire Array Decorated Photovoltaic Module for Driving Smart Dimming Glasses	28
GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics	28
An Ultralow R _{on, sp} Accumulation LDMOS With High	28
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications	28
AlGaN/GaN Sidewall Gated HEMTs	27
Experiments of Sub-Micron Superjunction Devices With Ultra-Low Specific On-Resistance	27
IEEE Transactions on Electron Devices Table of Contents	27
A Novel Approach for Large-Scale Fabrication of Nanoscale Vacuum Electronic Devices With High Compatibility and Controllability	27
An Enhanced Elliptically-Deformed Folded Waveguide for E-Band Traveling Wave Tubes With Hot-Test Validation	27
Fabricated Parasitic-Interbridge-Free TreeFETs for CMOS Low-Power Applications	27
IEEE Electron Device Letters Publication Information	27
V _FB Tuning and D _it Modulation Using LaFMD and Al ₂	26
Perovskite/InGaZnO-Based Reconfigurable Optoelectronic Device	26
A Flexible Organic Electrochemical Synaptic Transistor With Dopamine-Mediated Plasticity	26
Corrections to “Semi-Classical Monte Carlo Simulation of Quantum Confinement Effects in Si Nanosheet and Fin FETs in Industry Standard Orientation”	26
Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor	26
Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm² UV Detection	26
Intelligent Dual-Mode Photodetector Based on Relaxor Ferroelectric PMN-PT Single Crystal	26
Al_0.1Ga_0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10⁶	26
High-Temperature Operation of Al_0.5Ga_0.5N/AlN Solar-Blind Phototransistor With Built-In Polarization Photogate	26
Effect of Optical Pulsewidth on Transition From Linear to Nonlinear Mode of GaAs PCSS	26
GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)	26
HfO₂-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications	26
Study of Vₜₕ Instability During Recovery After Off-State Stress in p-GaN HEMT	26
A Data-Driven ANN-Based Model for FeCAP and FeFET: Orienting to SPICE and Circuit Design	26
Anti-Ferroelectric ZrO ₂ Capacitors With Ultra-High Capacitive Memory Window and Low Operating Voltage	26
High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter	26

Mitigate IR-Drop Effect by Modulating Neuron Activation Functions for Implementing Neural Networks on Memristor Crossbar Arrays	26
Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics	26
High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion	26
A Low-Loss Wideband SAW Filter With Low Drift Using Multilayered Structure	26
High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes	26
Quasi-300 kW P-band Photoconductive Microwave Power Device with Enhanced Lifetime via Mesh-electrode	25
Extended Single-Sided Row Hammer in DRAM: Concept and Physical Mechanism Analysis	25
High-Temperature Deep Ultraviolet Photodetector Based on a Crystalline Ga₂O₃-Diamond Heterostructure	25
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes	25
Assessing Copper High Density-TSVs for Reliable Performance in Cryogenic Systems	25
Study on Improving Efficiency of Perovskite Solar Cells Through Controlling Humidity Conditions and Nickel Oxide Composition	25
Low-Loss N79 Band SAW Filter With 16.0% FBW Based on15° Y-X LiNbO₃/SiC Structure	25
Bilayer Metal Oxide Channel Thin Film Transistor With Flat Interface Based on Smooth Transparent Nanopaper Substrate	25
Scheme for Multi-Chiplet Integration With Low Thermal Budget by Asymmetric Cu-Cu Bonding With Au Passivation Bonding Structure	25
The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors	25
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue	25
High Selectivity Millimeter-Wave On-Chip Band-Pass Filter With Semi-Lumped Dual-Mode Resonator by Using GaAs Technology	25
CNT and ITZO TFTs Integrated Complementary Inverter with a High Gain of 1005 V V ^-1	25
Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy	24
ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability	24
Table of Contents	24
Table of Contents	24
Manufacturing-Friendly SOT-MTJ Device With High Reliability and Switching Efficiency	24
3326-V Modulation-Doped Diamond MOSFETs	24
Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric Hf_xZr_1–xO₂ Bilayer Structure	24
Development of Low Cost Glass-Based Deep Trench Capacitor for 3D Packaging	24
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers	24
Anisotropic Two-Dimensional Perovskite Single Crystal for Improved X-Ray Detection Performance	24
Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits	24
Table of Contents	24
Low-Power CMOS Inverter Using Homogeneous Monolayer WSe₂ Channel With Polarity Control	24
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes	23
High-Power Diamond Photoconductive Switch With Sub-Bandgap Responsivity	23
Nonvolatile Ferroelectric LiNbO₃ Domain Wall Crossbar Memory	23
Design and Cold-Test Measurement of a Novel Metamaterial Assisted Dual-Band Slow Wave Structure	23
Double Buried Oxide Trap-Rich Substrates for High Frequency Applications	23
Blank Page	23
In-Plane Thermal Anisotropy Characterization of β-Ga ₂ O ₃ (001) Using a Dedicated Thermal Test De	23
Orthogonal-Bulk-Spin-Orbit-Torque Device for All-Electrical In-Memory Computing	23
Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation	23
Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack	23
Role of Solar Cells in Global Energy Transformation	23
Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂	23
Blank Page	23
3D SRAM Using Ultrathin Body Nanosheets and Bitline Signal Decoupling	23
An On-Chip Fractally Chipped FBAR Filter With Ba-Zn-Fe-Sc-O Thin Film in 5G-FR2 Millimeter-Wave Band	23
IIRW 2023 Call for Papers	23
RF Characterization of Ferroelectric MOS Capacitors	22
Unraveling the Discrepancy on Persistent Photoconductivity Between Organic Single-Crystal and Thin-Film Phototransistors	22
Memory Window Expansion in HfO ₂ -Based FeFETs Through Trap-to-Dipole Conversion	22
Front Cover	22
Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications	22
Demonstration of Improvement in On-Resistance Versus Breakdown Voltage Trade-Off for Top-Gate High-Voltage InGaO TFTs	22
Controllable p-Type Doping of 2D WSe ₂ pFET by Engineered Surface Charge Transfer Doping With Metal Co-Seeding	22
Hybrid CMOS Inverter With 519-V/V Gain Based on Highly Stable LTPS p-TFT and IGZO n-TFT	22
Engineering Ferroelectric Gate Dielectric to Achieve High-Performance Multilevel Organic Transistor Nonvolatile Memories With the Programming/Erasing Voltages Below 10 V	22
Current Temperature Stress Induced Threshold Degradation on Corbino a-InGaZnO Transistors	22
One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time	22
Novel Asymmetric Operation Scheme for HfO₂-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts	22
Nano-Welded Lead-Free Ag ₂ BiI ₅ Perovskite Microcrystals Enable Ultrasensitive Self-Powered Photo	21
Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier	21
Extremely Low Switching Current STT-MRAM Device With Double Spin Transfer Torque	21
Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs	21
Self-Powered Nano Pt/Amorphous Ga₂O₃/Crystalline CuCrO₂ Heterostructure Solar-Blind Photodetector With High Responsivity and Detectivity	21
Novel G-Band Slot-Loaded Folded Waveguide Traveling Wave Tube	21
Impact of CF₄/O₂ Plasma Passivation on Endurance Performance of Zr-Doped HfO₂ Ferroelectric Film	21
LO-Free Self-Driven Down-Conversion via Combination Resonance in CMOS-MEMS Resonators	21
Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET	21
Iso-Potential Guard Ring Engineered 4H-SiC Soft X-Ray Photon Counting Detector With Room-Temperature Energy Spectroscopy Capability	21
Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments	21
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell	21
Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer	21
Yttrium Doped Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Capacitor Exhibiting Fatigue Free (>10₁₂ Cycles), Long Retention, and Imprint Immune Performance at 4 K	21
Anticipative Objective Tracking With Short-Term Memristive Synapses	21
Ultrafast-Speed MoS₂/CuO Photodetector Based on Strongly Coupled Heterojunction	21
SnS₂/WSe₂ van der Waals Single-Detector Spectrometer With a Dynamically Selecting Spectral Reconstruction Strategy	21
Ultrathin Multilayer P(VDF-TrFE) Film-Based Piezoelectric Resonator for High-Quality Under-Display Fingerprint Recognition	21
Ferroelectric Transistor With Grooved Structure for Reliable Multi-Level Characteristics	21
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line	21
Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors	21
Initial Demonstration of an Inductive Vibrating Ring Gyroscope Fabricated From Fused Silica	21
A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide	21
Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer	21
MetaRGBX-Net: RGB Sensitivity and Cross-Talk Prediction in CMOS Image Sensor	21
Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction	20
Diffraction-Grating-Free Very Small-Pitch High-x InP/In_xGa_1-x as Quantum Well Infrared Photodetectors	20
CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing	20
31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiN_x Passivation	20
Low-Temperature Annealing in O₂ to Annihilate the Fixed Charges in 4H-SiC/SiO₂ Interface Induced by High-N-Density Nitridation Process	20
High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer	20
Scale-Invariant Nature of Space Charge Oscillations in Electron-Beam-Driven Diodes	20
0.53-mΩ.cm ² /592-V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination	20
Changes to the Editorial Board	20
Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)	20
5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer	20