Microelectronics International

Papers
(The TQCC of Microelectronics International is 2. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
A failure location technology for SiP devices based on TDR nondestructive testing method6
On the methodology of calculating volume charge density in a MIFGMOS substrate using Poisson’s equation6
Reliability evaluation on SRG with full-bridge power converter considering thermal stress6
Design of UWB MIMO antenna using lean wearable textile substrate for reduced SAR5
Design and implementation of miniaturized tri-band microwave bandpass filter5
Structural analysis of paper substrate for flexible microfluidics device application5
Model of boron diffusion in silicon used for solar cell fabrication based on boric acid solutions4
Strengthening mechanisms of Cu/SACZ/Al micro-connection joints with solid-state bonding4
Influence of copper pillar bump structure on flip chip packaging during reflow soldering: a numerical approach4
A fully matched dual stage CMOS power amplifier with integrated passive linearizer attaining 23 db gain, 40% PAE and 28 DBM OIP34
An improved parallel five-level reinjection CSC for self-commutation of thyristor converter4
Packaging design and thermal analysis for 1 mm2 high power VCSEL3
Magnetic alignment technology for wafer bonding3
Effect of alloy particle size and stencil aperture shape on solder printing quality3
Atomic structure for AlN grown on different plane orientation of sapphire via numerical study3
The preparation of anisotropic conductive paste and its application in FOB interconnection3
Defected microstrip structure-based near-end and far-end crosstalk mitigation in high-speed PCBs for mixed signals3
Preparation and characterization of doped LiZn0.92Cu0.08PO4 ceramic for microwave and millimeter-wave substrates3
Radiation-hardened flip-flop for single event upset tolerance3
Retraction notice: Packaging design and thermal analysis for 1 mm2 high power VCSEL2
Preliminary dielectrophoresis study: Manipulation of protein albumin and electrical quantification by using cyclic voltammetry technique2
A 1.8 V high-speed 8-bit hybrid DAC with integrated rail-to-rail buffer amplifier in CMOS 180 nm2
Improving the electromagnetic compatibility of electronic products by using response surface methodology and artificial neural network2
Key techniques of ultra-low-power ADC and miniaturized RF transceiver circuits for 4G/LTE applications2
CVD processed ZnO thin film as solid thermal interface material in electronic devices: thermal and optical performance of LED2
Extreme temperature thermal shock induced microstructure degradation and shear property deterioration of Sn3.0Ag0.5Cu/Cu solder joints2
Influence of different etching methods on the structural properties of porous silicon2
Real-time contact angle’s measurement of molten solder balls in laboratory conditions2
Influence of selected factors on parameters of a cooling system with a Peltier module and forced air flow2
Cylindrical conformal wideband antenna with enhancement of gain using integrated parasitic triangular shaped elements for WiMAX application2
Double-sided silicon vias (DSSVs) interconnection for large-sized interposer fabrication2
A monopole polarisation diversity antenna for high density packaging MIMO applications2
Deformation and crack growth in multilayered ceramic capacitor during thermal reflow process: numerical and experimental investigation2
Influence of Ag particle shape on mechanical and thermal properties of TIM joints2
Facile ligand-exchange strategy to promote low-temperature nano-sintering of oleylamine-capped Ag nanoparticles2
Guest editorial2
Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED2
Design of radio frequency power amplifier for 2.45 GHz IoT application using 0.18 µm CMOS technology2
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