IEEE Transactions on Device and Materials Reliability

Papers
(The H4-Index of IEEE Transactions on Device and Materials Reliability is 15. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-09-01 to 2025-09-01.)
ArticleCitations
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers50
From Mega to nano: Beyond one Century of Vacuum Electronics48
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations34
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via27
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters25
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization24
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators22
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data22
Sintered Silver Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability22
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module21
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes20
IEEE Transactions on Device and Materials Reliability Publication Information20
Reliability of Advanced Nodes18
IEEE Transactions on Device and Materials Reliability Publication Information17
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition16
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology15
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI15
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode15
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