IEEE Transactions on Device and Materials Reliability

Papers
(The median citation count of IEEE Transactions on Device and Materials Reliability is 0. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
[Front cover]48
TechRxiv: Share Your Preprint Research with the World!40
Blank Page36
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers26
Member Get-A-Member (MGM) Program22
IEEE Transactions on Device and Materials Reliability Publication Information21
2022 Index IEEE Transactions on Device and Materials Reliability Vol. 2220
IEEE Robert Bosch Micro and Nano Electro Mechanical Systems Award20
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Call for papers: Special issue on Solid-State Image Sensors18
2021 IEEE EDS Early Career Award17
IEEE Transactions on Device and Materials Reliability information for authors17
IEEE Transactions on Device and Materials Reliability Information for Authors16
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design16
From Mega to nano: Beyond one Century of Vacuum Electronics16
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"14
The Characteristics and Reliability With Channel Length Dependent on the Deposited Sequence of SiO₂ and Si₃N₄ as PV in LTPS TFTs13
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via12
IEEE Transactions on Device and Materials Reliability Publication Information12
Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool12
Front Cover12
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET’s11
ESD Stress Effect on Failure Mechanisms in GaN-on-Si Power Device11
Simulation Study of High-Speed Ge Photodetector Dark and Light Current Degradation11
High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors11
A Novel DTSCR With Embedded MOS and Island Diodes for ESD Protection of High-Speed ICs10
Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density10
Characterization of LDO Induced Increment of SEE Sensitivity for 22-nm FDSOI SRAM10
Numerical Simulation of Trapped Hole Lateral Migration and Induced Threshold Voltage Retention Loss in a SONOS Flash Memory10
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module10
H2C-TM: A Hybrid High Coverage Test Method for Improving the Detection of HtD Faults in STT-MRAMs10
Improvement of Encapsulation Technique of Organic Photovoltaics by UV-Curable Adhesive10
Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM9
Detection and Analysis of Stress Wave in MOSFET Under Gate-Source Overvoltage Failure9
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs9
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance9
HEMT Inspired GaN Optical Waveguides: Analysis Under Thermal Stress and Prospects9
Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications9
Systematic Unsupervised Recycled Field-Programmable Gate Array Detection9
Extracting Total Ionizing Dose Threshold Voltage Shifts From Ring Oscillator Circuit Response8
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by Means of Impedance Spectroscopy8
Side-Channel Attack Resilient RHBD 12T SRAM Cell for Secure Nuclear Environment8
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations8
Analysis of Multicrystalline Si Solar Cell Improvement Using Laser-Beam-Induced Current Technique8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems8
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data8
Qualitative and Quantitative Diagnostic Device for Detecting Defects in Crystalline Silicon PV Cells8
Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs8
PEAR: Unbalanced Inter-Page Errors Aware Read Scheme for Latency-Efficient 3-D NAND Flash8
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators8
An Empirical Study on Fault Detection and Root Cause Analysis of Indium Tin Oxide Electrodes by Processing S-Parameter Patterns8
Design of Compact Reliable Energy Efficient Read Disturb Free 17T CNFET Ternary S-RAM Cell8
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO₂ and HfO₂ Stacks8
Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage7
In-Field Testing of Functionally-Possible Transition Faults With High Activation Frequencies7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
Total Ionizing Dose (TID) Impact on Basic Amplifier Stages7
High Sensitivity Temperature Measurements to Track and Compensate Aging Effects on CMOS Amplifiers7
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization7
CMOS Reliability From Past to Future: A Survey of Requirements, Trends, and Prediction Methods7
Optimization of 3-D IC Routing Based on Thermal Equalization Analysis7
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Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress6
Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits6
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits6
IEEE Transactions on Device and Materials Reliability Publication Information6
From Ground to Orbit: A Robust and Efficient Test Methodology for RISC-V Soft-Cores6
A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors6
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs6
TechRxiv: Share Your Preprint Research with the World!6
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters6
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric6
IEEE Transactions on Device and Materials Reliability Publication Information5
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TechRxiv: Share Your Preprint Research with the World!5
A Thermal Circuit Representing Frequency Dependent Dynamic Heating Between Electron and Lattice in SOI-FinFET5
Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers5
Table of contents5
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IEEE Transactions on Semiconductor Manufacturing CALL FOR PAPERS for Special Issue on Process-Level Machine Learning Applications in Semiconductor Manufacturing5
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Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays5
Eight-Level/Cell Storage by Tuning the Spatial Distribution of Dielectrics in a Tri-Layer ReRAM Cell: Electrical Characteristics and Reliability5
Table of contents5
IEEE Transactions on Device and Materials Reliabilityinformation for authors5
The Influence of Bond Wire Aging on DM EMI Noise in IGBT Converters Considering High-Frequency Ringing5
Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory5
Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices5
Destructive Testing for Reliability Analysis at High-Power Microwave in GaAs/InGaP Hetero-Junction Bipolar Transistor5
TechRxiv: Share Your Preprint Research with the World!5
Electromigration Performance Improvement of Metal Heaters for Si Photonic Ring Modulators4
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach4
Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs4
Accelerated Lifetime Testing and Analysis of Delta-Doped Silicon Test Structures4
Reliability Challenges in Advanced 3D Technologies: The Case of Through Silicon Vias and SiCN–SiCN Wafer-to-Wafer Hybrid-Bonding Technologies4
Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric4
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending4
Nondestructive and Quantitative Evaluation of a GaAs Epitaxial Layer Covered With a Silicon Nitride Insulating Thin Film After a Highly Accelerated Temperature and Humidity Stress With the Use of Phot4
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI4
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022)4
Negative-Bias Temperature Instability of p-GaN Gate GaN-on-Si Power Devices4
Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices4
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests4
Guest Editorial TDMR IIRW Special Section4
Elimination of Thermo-Mechanically Driven Circumferential Crack Formation in Copper Through-Glass via Substrate4
Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment4
Highly Reproducible and Reliable Methanol Sensor Based on Hydrothermally Grown TiO2 Nanoparticles4
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET4
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology4
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes4
Influence of Critical Working Conditions on Stability of Varistor Characteristics4
Analysis of Hump Effect Induced by Positive Bias Temperature Instability in the Local Oxidation of Silicon n-MOSFETs3
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity3
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode3
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition3
IEEE Transactions on Device and Materials Reliability Information for Authors3
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Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events3
Machine Learning Approach for Prediction of Point Defect Effect in FinFET3
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges3
Suppression of Total Dose Effects on the Performance of InAlGaN/GaN MIS-HEMT via Field Plate Implementation3
IEEE Transactions on Device and MaterialsReliability publication information3
TechRxiv: Share Your Preprint Research with the World!3
A SiC Trench Schottky Diode With Accelerated Hole Extraction and Recombination Structure for Enhancing Single-Event Burnout Tolerance3
Reliability and Process Scalability of TiO2/Porous Silicon-Based Broadband Photodetectors3
Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs3
Introducing IEEE Collabratec3
Table of Contents3
Influence of Hot Carrier Degradation on Total Ionizing Dose in Bulk I/O-FinFETs3
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers3
Table of Contents3
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs3
Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective3
Table of Contents2
Table of Contents2
Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions2
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices2
IEEE Transactions on Device and Materials Reliability Publication Information2
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TechRxiv: Share Your Preprint Research with the World!2
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Dielectrics for 2D electronics2
Member Get-A-Member (MGM) Program2
Degradation and Reliability Modeling of EM Robustness of Voltage Regulators Based on ADT: An Approach and a Case Study2
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI2
IEEE Transactions on Device and Materials Reliability Information for Authors2
2024 Index IEEE Transactions on Device and Materials Reliability Vol. 242
Call for Nominations for Editor-in-Chief2
Dielectrics for 2D electronics2
Effect of Hydrogen Molecule Release on NBTI by Low-Temperature Pre-Treatment in P-Channel Power VDMOS Transistors2
Table of Contents2
Reliability and Optimization Simulation Study of Zero-Temperature-Delay Point in Digital Circuits for Advanced Technology2
Electro-Mechanical Properties of Molybdenum Thin Film on Polyethylene Terephthalate Subjected to Tensile Stress2
Effect of Vapor Phase Infiltration on Metal-Polymer Adhesion for Ultra-Low-k Dielectric Materials2
Thermal Runaway in Thin Film PV: temperature profile modeling2
IEEE Transactions on Device and Materials Reliability Information for Authors2
Introducing IEEE Collabratec2
IEEE Transactions on Device and Materials Reliability Publication Information2
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators1
High Precision IGBT Health Evaluation Method: Extreme Learning Machine Optimized by Improved Krill Herd Algorithm1
Mitigation Technique for Single Event Transient via Pulse Quenching1
Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature1
Editorial Kudos to Our Reviewers1
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging1
Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed With Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study1
Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells1
Metallic Ratio Equivalent-Time Sampling and Application to TDC Linearity Calibration1
Bound-Constrained Expectation Maximization for Weibull Competing-Risks Device Reliability1
A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications1
Metallization Reliability of GaN-Based High-Voltage Light-Emitting Diodes1
Novel ESD Compact Modeling Methodology Using Machine Learning Techniques for Snapback and Non-Snapback ESD Devices1
Failure Analysis and Performance Improvement of Phase Change Memory Based on Ge2Sb2Te51
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection1
Modeling of Threshold Voltage Degradation of 22nm FD-SOI nMOSFETs Under Dynamic Voltage Scaling1
High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation1
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices1
Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs1
Analyzing Total-Ionizing-Dose Induced Memory Window Degradation in Ferroelectric FinFET1
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN1
Comparative Analysis of SGTMOS Degradation Under Repeated Off-State Avalanche and Short Circuit Current Pulses1
Cylindrical Indentation to Selectively Stress Nanoscale CMOS Transistors1
The Impact of Gold Plating Process for Bonding Pads on Interconnection Quality1
SafeDE: A Low-Cost Hardware Solution to Enforce Diverse Redundancy in Multicores1
Degradation Physics of Silicone Under UV-A Irradiation1
Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter1
Developing Cost-Effective Ultrathin Reliable High Power White LED Emitters1
Investigation of Deuterium De-Passivation by Repetitive Thermal Stress in CMOS Fabrication1
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies1
Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width1
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate1
Frequency Dependent Degradation and Failure of Flexible a-InGaZnO Thin-Film Transistors Under Dynamic Stretch Stress1
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET1
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method1
A Nonvolatile Multilevel Data Storage Memory Based on Two-Dimensional Materials for Aerospace Applications1
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing1
LCHC-DFT: A Low-Cost High-Coverage Design-for-Testability Technique to Detect Hard-to-Detect Faults in STT-MRAMs in the Presence of Process Variations1
A 16nm All-Digital Hardware Monitor for Evaluating Electromigration Effects in Signal Interconnects Through Bit-Error-Rate Tracking1
Reliability Analysis of Storage Systems With Partially Repairable Devices0
IEEE Transactions on Device and Materials Reliability Information for Authors0
Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements0
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs0
A New Scheme of the Low-Cost Multiple-Node-Upset-Tolerant Latch0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications"0
Mechanism Analysis and Thermal Damage Prediction of High-Power Microwave Radiated CMOS Circuits0
IEEE Transactions on Device and MaterialsReliability publication information0
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications0
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 230
Microstructural Evolution of Gate Oxide in SiC power MOSFETs under Heavy-Ion Irradiation0
TDMR December 2024 Editorial0
IEEE Transactions on Device and MaterialsReliability publication information0
Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips0
The Failure Mechanism of Internal Circuit During ESD Striking a Power to Another Power0
EXT-TAURUM P2T: An Extended Secure CAN-FD Architecture for Road Vehicles0
IEEE Transactions on Device and Materials Reliabilityinformation for authors0
IEEE Transactions on Device and Materials Reliability Publication Information0
Study on Lifetime Modeling of IGBT Modules Considering Electric Frequency Influence Mechanism0
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability0
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs0
TechRxiv: Share Your Preprint Research with the World!0
Development of Accelerated Life Testing Apparatus for Light-Emitting Diode Therapy0
Table of Contents0
Reliability Characterization and Failure Prediction of 3D TLC SSDs in Large-Scale Storage Systems0
J. J. Ebers Award0
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications0
Front Cover0
An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory0
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory0
IEEE Transactions on Device and Materials Reliabilityinformation for authors0
Review of Double-Sided Cooling Power Modules for Driving Electric Vehicles0
Impact of Layout Parameter Mismatches on Short Circuit Reliability of Parallel-Connected Planar, Trench, and Double-Trench SiC MOSFETs0
Modeling of Temperature Rises at Focal-Plane-Array and Their Impact on the Performance of a CCD-Based Spaceborne Earth-Observing Imaging System0
Mechanism and Quantitative Modeling of the SRAM Soft Error Induced by Space Electrostatic Discharge0
Table of Contents0
Low-Temperature Deuterium Annealing for the Recovery of Ionizing Radiation-Induced Damage in MOSFETs0
IEEE Transactions on Device and Materials Reliability Information for Authors0
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate0
IEEE Transactions on Device and Materials Reliability Publication Information0
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors0
IEEE Transactions on Device and Materials Reliability Information for Authors0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications"0
Cryogenic Total Ionizing Dose Effects and Annealing Behaviors of SiGe HBTs0
Strain—Engineered Asymmetrical Si/Si1–xGex IR-Photo-Detector: Theoretical Reliability and Experimental Feasibility Studies0
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"0
Investigation of Self-Heating Effect in Tree-FETs by Interbridging Stacked Nanosheets: A Reliability Perspective0
Investigation of the Long-Term Reliability of a Velostat-Based Flexible Pressure Sensor Array for 210 Days0
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Lightweight Read Reference Voltage Calibration Strategy for Improving 3-D TLC NAND Flash Memory Reliability0
Single-Event Burnout Effects of Complementary LDMOS Devices in High-Voltage Integrated Circuits0
A Low-Area Overhead and Low-Delay Triple-Node-Upset Self-Recoverable Design Based on Stacked Transistors0
TDDB Lifetime Reduction From Charging Damage in a 3D Vertical NAND Memory Technology0
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