IEEE Transactions on Device and Materials Reliability

Papers
(The median citation count of IEEE Transactions on Device and Materials Reliability is 0. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
From Mega to nano: Beyond one Century of Vacuum Electronics55
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers53
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability40
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data31
On the Response Time constant of Interface Defects in Accumulation26
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators25
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via24
Editorial20
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters19
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module19
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability19
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization18
Reliability of Advanced Nodes16
IEEE Transactions on Device and Materials Reliability Publication Information16
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology16
IEEE Transactions on Device and Materials Reliability Publication Information16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI15
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode15
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes14
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects14
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies14
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs14
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs14
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition14
IEEE Transactions on Device and Materials Reliability Publication Information14
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm14
Effects of Electrolyte Volume on Electrochemical Migration of Tin in Water Drop Test13
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging13
Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface13
TechRxiv: Share Your Preprint Research with the World!12
Table of Contents12
Member Get-A-Member (MGM) Program12
Introducing IEEE Collabratec12
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability11
Electrical Switching Safe Operation Area on GaN Bidirectional Switches Under Hard-Switching Conditions by Multiple Pulse Test11
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method11
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors11
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness11
IEEE Transactions on Device and Materials Reliability Information for Authors10
Non-Traditional Operational Mechanisms of NbO x -Based Threshold Switching Devices Used on On-Chip ESD Protection10
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process10
IEEE Transactions on Device and Materials Reliability Publication Information10
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning10
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions10
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design9
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects9
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications9
From Mega to nano: Beyond one Century of Vacuum Electronics9
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability8
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems8
Table of Contents8
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators8
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation8
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography8
Open Model Interface Assisted NBTI-Aware Design With Dual-Vth Logic Synthesis Strategy for Reliability Improvement8
[Blank page]8
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter8
TechRxiv: Share Your Preprint Research with the World!8
Blank Page8
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles8
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits8
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance8
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs7
Blank Page7
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs7
Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications7
IEEE Transactions on Device and MaterialsReliability publication information7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N + -PolySi/SiC HeteroJunction Diode for Improved Third Quadrant and High Temperature7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric7
TechRxiv: Share Your Preprint Research with the World!6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET6
An Efficient Modeling Approach for Electrothermal Migration Analysis of On-Chip Interconnects6
High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment6
Influence of Critical Working Conditions on Stability of Varistor Characteristics6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Analytical Model for Cu Interconnect Lifetimes Under Combined Thermomigration and Electromigration Stress6
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters6
Lifetime Prediction Method for IGBT Modules Under Combined Power Cycling–Vibration Conditions6
Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling6
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing5
IEEE Transactions on Device and Materials Reliability Publication Information5
Wide Band Gap Semiconductors for Automotive Applications5
Call for Nominations for Editor-in-Chief5
A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications5
Error-Corrected RRAM-Based Compute-in-Memory Accelerator Using Voltage-Clamp Current Mirror5
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
IEEE Transactions on Device and Materials Reliability Information for Authors5
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges5
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field5
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method4
IEEE Transactions on Device and Materials Reliability Information for Authors4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Modules4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications4
Reliability of Advanced Nodes4
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators4
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability4
Digital Probing of Activation Energy for Evaluating Reliability in 2D and 3D NAND Flash Memory4
Table of Contents4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy4
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin4
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique4
Analysis of Multicrystalline Si Solar Cell Degradation Due To Reverse Bias and High Temperature Aging4
Comparison of Different Input Data for the Prediction of LED Solder Joints Using Artificial Neural Networks4
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices4
IEEE Transactions on Device and Materials Reliability information for authors4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN4
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects4
Front Cover3
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 233
Characterization and Analysis of Hot Carrier Degradation Under DC and Large-Signal RF Stress in a PDSOI Floating-Body NFET-Based Power Amplifier Cell Under WiFi Operating Conditions3
QRAM4Space: Dual-Node Radiation-Tolerant Quadruple SRAM for Space Systems3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications"3
Study on Electromagnetic Pulse Damage of 22nm FDSOI in Radiation Environment3
Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs3
Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method3
IEEE Transactions on Device and MaterialsReliability publication information3
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory3
Weak Snapback Silicon Controlled Rectifier ESD Device With Double Snapback Characteristics3
Microstructural Evolution of Gate Oxide in SiC Power MOSFETs Under Heavy-Ion Irradiation3
Table of Contents3
Reliability Analysis of GaAs-PIN Limiter Under Ultra-Wideband Pulse Radiation3
On-Silicon Characterization of CDM-Like Stress in Long Interconnects Using vf-TLP in Nanometric ICs3
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors3
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"3
Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria3
Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation3
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability3
Exploring Non-TAP Interfaces for Efficient and Secure Access to IJTAG Network3
An Efficient Dynamic Threshold Voltage Detection Scheme for Improving 3-D NAND Flash Reliability3
Resistance Degradation of Unintentionally Doped Single Crystal BaTiO33
SiC Damage Induced by Heavy Ion Irradiation and Post-Gate Stress in SiC MOSFETs2
Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs2
Sensitivity of Logic Cells to Laser Fault Injections: An Overview of Experimental Results for IHP Technologies2
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design2
EXT-TAURUM P2T: An Extended Secure CAN-FD Architecture for Road Vehicles2
Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density2
Blank Page2
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending2
Table of Contents2
Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs2
Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM2
A Low Cost Triple-Node-Upset Self-Recoverable Latch Design for Nanoscale CMOS2
Improvement of Encapsulation Technique of Organic Photovoltaics by UV-Curable Adhesive2
Comparative Study on the Performance of Digital Low-Light EBAPS Devices Based on Different Multi-Alkali Photocathode Materials2
Resilience via Recovery: Gamma-Irradiated Cascode GaN HEMTs Under Electron Wind Force2
Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells2
Copper Line Resistance Degradation Caused by Unidirectional and Bidirectional Pulsed Currents2
Research on the Mechanism of Electrical Erosion Accelerating Failure in High-Current Pulse Thyristor-Based Switches2
Effect of Gamma Radiation on Static DC, Reliability, and RF Performance of Submicron GaN-on-Si RF MIS-HEMTs With In Situ SiN2
Statistical Model and Transistor Size Effect of Hot Carrier Injection for Stability Reinforced SRAM Physically Unclonable Function2
Board Level-Component Solder Joints Normalized Crack Severity Index of Solid-State Drive With Different Reliability Temperature Cycle Test Profiles2
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"2
All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves2
Thermal Runaway in Thin Film PV: temperature profile modeling2
Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions2
Study on the Effect of Cu Buffer and Cu-Wire Bonds on SiC Device Performance2
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests2
Blank Page1
IEEE Transactions on Device and Materials Reliability Information for Authors1
Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model1
SafeDE: A Low-Cost Hardware Solution to Enforce Diverse Redundancy in Multicores1
Comparative Analysis of SGTMOS Degradation Under Repeated Off-State Avalanche and Short Circuit Current Pulses1
Reliability and Optimization Simulation Study of Zero-Temperature-Delay Point in Digital Circuits for Advanced Technology1
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices1
The Failure Mechanism of Internal Circuit During ESD Striking a Power to Another Power1
A Gate-Level SER Estimation Tool With Event-Driven Dynamic Timing and SET Height Consideration1
Effect of Titanium-Polymer Interactions on Adhesion of Polymer-Copper Redistribution Layers in Advanced Packaging1
Investigation of the Mechanism of Mixed-Gas Plasma Modulation of Indium Oxide Thin-Film Transistor Performance1
On-Chip Heater Design and Control Methodology for Reliability Testing Applications Requiring Over 300°C Local Temperatures1
Moisture Dependent Degradation Rate of Silicone in LED Optical Housing Material—Ab-Initio Modelling1
Radiation Hardened Domino Logic-Based Schmitt Trigger Circuit With Improved Noise Immunity1
Impact of Total Ionizing Dose on the Electrical Performance of Silicon Carbide MOSFET1
Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature1
Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction1
Experimental Comparison of TID Hardness in MOSFETs Implemented With the Enclosed, Diamond (Hexagonal Gate), and Rectangular Layout Styles1
A Comprehensive Modeling Framework for Charge-Sharing and Bias-Dependent Single Event Transient Prediction in FinFETs1
Design and Fabrication of FS-IGBTs With Enhanced Ruggedness and the Influence of Circuit Parameters on Short-Circuit1
A Novel Lifetime Estimation Method and Structural Optimization Design for Film Capacitors in EVs Considering Material Aging and Power Losses1
The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode1
Assessing the Reliability of DRAM CMOS Periphery: Comparing AC and DC Conditions for BTI and TDDB1
AdAM: Adaptive Approximate Multiplier for Fault Tolerance in DNN Accelerators1
A Low-Area Overhead and Low-Delay Triple-Node-Upset Self-Recoverable Design Based on Stacked Transistors1
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications1
IEEE Transactions on Device and Materials Reliability Information for Authors1
Table of Contents1
Blank Page1
IEEE Transactions on Device and Materials Reliability Publication Information1
A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications1
A DICE Flip-Flop Design by Resetting Redundancy Hardening for Single Event Upset Tolerance1
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET1
2024 Index IEEE Transactions on Device and Materials Reliability Vol. 241
IEEE Transactions on Device and Materials Reliability Publication Information1
Effect of Large Amplitude Thermal Cycles on Power Assemblies Based on Ceramic Heat Sink and Multilayer Pressureless Silver Sintering1
Correction Masking: A Technique to Implement Efficient SET Tolerant Error Correction Decoders1
Multiple Phase Change Materials Integrated Into Power Module for Normal and High Current Reliability Enhancement1
Mechanism and Quantitative Modeling of the SRAM Soft Error Induced by Space Electrostatic Discharge1
IEEE Transactions on Device and Materials Reliability Publication Information1
Table of Contents1
Investigation of Switching Characteristics Degradation of GaN HEMT Under Power Cycling Aging1
Total Ionizing Dose (TID) Impact on Basic Amplifier Stages0
Impact of Electro-Thermal Transport on HCI and BTI Lifetime of Twin Nanowire FETs: Different Operational Modes0
Front Cover0
H2C-TM: A Hybrid High Coverage Test Method for Improving the Detection of HtD Faults in STT-MRAMs0
Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits0
Blank Page0
ESD Protection Designs: Topical Overview and Perspective0
A Kalman Filter Method Based on Adaptive Thermal Model for Online Junction Temperature Estimation of SiC MOSFET0
Investigation on Electrical Properties of Printed Graphene Subjected to Aging, Ambient Environment and Gamma Radiation0
Electro-Mechanical Properties of Molybdenum Thin Film on Polyethylene Terephthalate Subjected to Tensile Stress0
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate0
Robust System Design IEEE IOLTS 20210
Table of Contents0
Side-Channel Attack Resilient RHBD 12T SRAM Cell for Secure Nuclear Environment0
Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications0
IEEE Transactions on Device and Materials Reliability Publication Information0
Extracting Total Ionizing Dose Threshold Voltage Shifts From Ring Oscillator Circuit Response0
TechRxiv: Share Your Preprint Research with the World!0
A Novel Radiation-Hardened 14T SRAM Bitcell Based on 16nm FinFET0
Exponential Gain Degradation Behavior on Irradiated InP/InGaAs Double Heterojunction Bipolar Transistors0
Review of Double-Sided Cooling Power Modules for Driving Electric Vehicles0
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers0
Front Cover0
Table of Contents0
Introducing IEEE Collabratec0
The Impact of Gold Plating Process for Bonding Pads on Interconnection Quality0
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO₂ and HfO₂ Stacks0
Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage0
IEEE Transactions on Device and Materials Reliability Publication Information0
An Empirical Study on Fault Detection and Root Cause Analysis of Indium Tin Oxide Electrodes by Processing S-Parameter Patterns0
Systematic Unsupervised Recycled Field-Programmable Gate Array Detection0
Impact of Layout Parameter Mismatches on Short Circuit Reliability of Parallel-Connected Planar, Trench, and Double-Trench SiC MOSFETs0
Blank Page0
An Improved Steep-Slope Triple Metal Gate-Dual Dielectric-GaAs-Pocket-HTFET With Interface Trap Charges Analysis0
Data-Driven Stress/Warpage Analyses Based on Stoney Equation for Packaging Applications0
Investigation of Deuterium De-Passivation by Repetitive Thermal Stress in CMOS Fabrication0
Effect of Ambient on the Field Emission Induced-Damage in Dielectric-Less MEMS Capacitive Structures0
Device Reliability and Effect of Temperature on Memristors: Nanostructured V₂O₅0
IEEE Transactions on Device and Materials Reliability Information for Authors0
0.84516501426697