IEEE Transactions on Device and Materials Reliability

Papers
(The median citation count of IEEE Transactions on Device and Materials Reliability is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)
ArticleCitations
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers62
Editorial38
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability36
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data33
On the Response Time Constant of Interface Defects in Accumulation33
Design and Reliability Assessment of a Reconfigurable Tunneling Device for Ultra Low-Power Applications27
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators24
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module22
Package-Level Electro-Thermal Simulation With Transient Thermal Resistance Model for Surge Stress Failure Analysis of SiC MOSFET22
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability22
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters20
IEEE Transactions on Device and Materials Reliability Publication Information19
IEEE Transactions on Device and Materials Reliability Publication Information19
Reliability of Advanced Nodes19
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition16
Research of Single-Event Burnout in P-NiO/n-Ga 2 O 3 Heterojunction Diode16
Stability in Electroluminescence From Ag-NSi Schottky Junction LED: Role of Ambient Oxidation16
Table of Contents16
Influence of Gate Insulator Modulation on the Electrical and Material Properties of Dual-Gate InGaZnO Thin-Film Transistors16
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI16
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology15
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs14
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs14
IEEE Transactions on Device and Materials Reliability Publication Information14
Research on the degradation mechanism of Stacked Aluminum Polymer Capacitors in Humid Environments13
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm13
IEEE Transactions on Device and Materials Reliability Publication Information13
Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface13
Effects of Electrolyte Volume on Electrochemical Migration of Tin in Water Drop Test13
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging12
Impact of Substrate Connection on Dynamic-R ON Drift of 650 V Normally-Off Monolithic Bidirectional AlGaN/GaN HEMT12
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects12
Table of Contents12
A Page–Sector Joint Degradation-Reliability Error Analysis Model for High-Density NAND Flash12
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness11
TechRxiv: Share Your Preprint Research with the World!11
IEEE Transactions on Device and Materials Reliability Publication Information11
Introducing IEEE Collabratec11
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability11
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors11
Non-Traditional Operational Mechanisms of NbO x -Based Threshold Switching Devices Used on On-Chip ESD Protection11
Member Get-A-Member (MGM) Program11
Electrical Switching Safe Operation Area on GaN Bidirectional Switches Under Hard-Switching Conditions by Multiple Pulse Test11
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method11
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions10
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning10
Avalanche Failure Mechanisms of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes With Various Epilayer Defects10
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET10
Reliability Analysis of IGZO Thin-Film Transistor for Wearable Biosensing Applications10
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design10
IEEE Transactions on Device and Materials Reliability Information for Authors10
TechRxiv: Share Your Preprint Research with the World!10
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability10
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography9
Open Model Interface Assisted NBTI-Aware Design With Dual-V th Logic Synthesis Strategy for Reliability Improvement9
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation9
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Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter9
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications9
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects9
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor9
NAVIgator under Fire: Characterizing Voltage Limits and Soft Error Resilience of AMD NAVI GPUs9
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits8
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems8
Table of Contents8
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs8
TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N + -PolySi/SiC Heterojunction Diode for Improved Third-Quadrant and High-Temperature8
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles8
SiC MOSFET Gate-Oxide and SiC/SiO 2 Interface Defect Charge Movement Based on the Hi-Lo C ISS8
Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications8
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress7
Semi-Empirical Modeling of Hot Carrier Degradation in 12-nm FinFET LDMOS Devices7
Degradation Mechanism of 4H-SiC MOSFET under 10 MeV Proton Irradiation7
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators7
Mitigating the Process Variations in Negative Capacitance Junctionless Device and Circuit7
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Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric7
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
Influence of Critical Working Conditions on Stability of Varistor Characteristics6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing6
An Efficient Modeling Approach for Electrothermal Migration Analysis of On-Chip Interconnects6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Lifetime Prediction Method for IGBT Modules Under Combined Power Cycling–Vibration Conditions6
Analysis and Structural Mitigation of Trapping-State-Trap Induced Drain Leakage Current in Buried-Channel-Array Transistor6
Key Factors Affecting Dynamic Reliability in GaN HEMTs and How Can They Be Mitigated?6
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field6
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters6
High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment6
Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges6
IEEE Transactions on Device and Materials Reliability Publication Information6
TechRxiv: Share Your Preprint Research with the World!6
Analytical Model for Cu Interconnect Lifetimes Under Combined Thermomigration and Electromigration Stress6
Error-Corrected RRAM-Based Compute-in-Memory Accelerator Using Voltage-Clamp Current Mirror6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET6
IEEE Transactions on Device and Materials Reliability Information for Authors5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects5
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices5
SafeHDC: Concurrent Uncertainty and Fault Detection in Hyperdimensional Computing5
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique5
Call for Nominations for Editor-in-Chief5
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array5
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN5
Digital Probing of Activation Energy for Evaluating Reliability in 2-D and 3-D NAND Flash Memory5
A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications5
Wide Band Gap Semiconductors for Automotive Applications5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing5
Comparison of Different Input Data for the Prediction of LED Solder Joints Using Artificial Neural Networks5
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin4
Reliability of Advanced Nodes4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Modules4
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method4
IEEE Transactions on Device and Materials Reliability Information for Authors4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy4
Analysis of Multicrystalline Si Solar Cell Degradation Due to Reverse Bias and High Temperature Aging4
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
Fast Heater‑Based NBTI Resolves the Reverse Antenna Effect in PID‑Degraded High‑k and SiO 2 pMOSFETs4
Experimental Study on Failure Mechanism of 4H-SiC MOSFETs Under Unclamped Inductive Switching (UIS) Stress Conditions4
Table of Contents4
Modeling and Evaluation of Single Event Effects on Hafnia-Based FeRAM4
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications"3
Table of Contents3
Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density3
Study on Electromagnetic Pulse Damage of 22nm FDSOI in Radiation Environment3
Reliability Analysis of GaAs-PIN Limiter Under Ultra-Wideband Pulse Radiation3
Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs3
Impact of EP-CG Interlayer Dielectric on Performance of L-Shaped Split-Gate Flash Memory3
3D NAND Scaling Performance Enhancement using 2D MoS 2 Channel3
Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria3
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"3
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications3
Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method3
Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs3
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"3
Sensitivity of Logic Cells to Laser Fault Injections: An Overview of Experimental Results for IHP Technologies3
An Efficient Dynamic Threshold Voltage Detection Scheme for Improving 3-D NAND Flash Reliability3
All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves3
Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation3
QRAM4Space: Dual-Node Radiation-Tolerant Quadruple SRAM for Space Systems3
Weak Snapback Silicon Controlled Rectifier ESD Device With Double Snapback Characteristics3
Impact of Temperature on Amplifier Circuits in 4H-SiC CMOS Technology3
Reliability-Aware structural and spacer optimization of E-shaped CombFET for advanced CMOS nodes3
Exploring Non-TAP Interfaces for Efficient and Secure Access to IJTAG Network3
A Low Cost Triple-Node-Upset Self-Recoverable Latch Design for Nanoscale CMOS3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design3
On-Silicon Characterization of CDM-Like Stress in Long Interconnects Using vf-TLP in Nanometric ICs3
Total-Ionizing-Dose Radiation Effect on Current Gain for Bipolar Junction Transistor Based 18 V BCD Technology3
Microstructural Evolution of Gate Oxide in SiC Power MOSFETs Under Heavy-Ion Irradiation3
Resistance Degradation of Unintentionally Doped Single Crystal BaTiO 33
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory3
Analysis of Electrical Performance Degradation of 4H-SiC Junction Barrier Schottky Diodes Induced by Neutron Irradiation3
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 233
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2024 Index IEEE Transactions on Device and Materials Reliability Vol. 242
IEEE Transactions on Device and Materials Reliability Information for Authors2
A Novel Lifetime Estimation Method and Structural Optimization Design for Film Capacitors in EVs Considering Material Aging and Power Losses2
On the Reliability of Complementary Field Effect Transistor: Unveiling the Role of Grain Granularities and Random Fluctuations2
Research on the Mechanism of Electrical Erosion Accelerating Failure in High-Current Pulse Thyristor-Based Switches2
A Comprehensive Modeling Framework for Charge-Sharing and Bias-Dependent Single Event Transient Prediction in FinFETs2
Comparative Analysis of SGTMOS Degradation Under Repeated Off-State Avalanche and Short Circuit Current Pulses2
Performance-Limiting Trapping Effects in n-Type Ga 2 O 3 Schottky Barrier Diodes2
SiC Damage Induced by Heavy Ion Irradiation and Post-Gate Stress in SiC MOSFETs2
Table of Contents2
Comparative Study on the Performance of Digital Low-Light EBAPS Devices Based on Different Multi-Alkali Photocathode Materials2
Defect Profiling and Dielectric Breakdown Projections of the β-Ga 2 O 3 /HfO <2
Thermal Runaway in Thin Film PV: temperature profile modeling2
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices2
Deep Learning-Driven Ensemble Learning for Solar PV Faults Detection Under Low Irradiance Condition2
Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature2
Design and Fabrication of FS-IGBTs With Enhanced Ruggedness and the Influence of Circuit Parameters on Short-Circuit2
Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells2
Impact of Post-Metallization Annealing on the Reliability of Barrierless Mo Word Lines2
Reliability and Optimization Simulation Study of Zero-Temperature-Delay Point in Digital Circuits for Advanced Technology2
Experimental Comparison of TID Hardness in MOSFETs Implemented With the Enclosed, Diamond (Hexagonal Gate), and Rectangular Layout Styles2
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending2
Effect of Gamma Radiation on Static DC, Reliability, and RF Performance of Submicron GaN-on-Si RF MIS-HEMTs With In Situ SiN2
Statistical Model and Transistor Size Effect of Hot Carrier Injection for Stability Reinforced SRAM Physically Unclonable Function2
Drain Field Plate Effects in p-GaN HEMTs During Surge Voltage Hard Switching2
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests2
Resilience via Recovery: Gamma-Irradiated Cascode GaN HEMTs Under Electron Wind Force2
2025 Index IEEE Transactions on Device and Materials Reliability Vol. 252
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET2
Reliability Assisted Electro-Physical Modelling of Radiation-Induced Resistance Fluctuation in Nanosheet FET2
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Copper Line Resistance Degradation Caused by Unidirectional and Bidirectional Pulsed Currents2
Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions2
Capacitor-Coupled Offset-Canceled DRAM Sense Amplifier With Ultralow Offset Voltage and Hidden Cancelation Time2
IEEE Transactions on Device and Materials Reliability Information for Authors2
Study on the Effect of Cu Buffer and Cu-Wire Bonds on SiC Device Performance2
Improvement of Encapsulation Technique of Organic Photovoltaics by UV-Curable Adhesive2
Board Level-Component Solder Joints Normalized Crack Severity Index of Solid-State Drive With Different Reliability Temperature Cycle Test Profiles2
Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM2
Multiple Phase Change Materials Integrated Into Power Module for Normal and High Current Reliability Enhancement1
Special Issue on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS 2023) in the IEEE Transactions on Device and Materials Reliability1
Table of Contents1
An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT1
Investigating the Arc-Shaped Kink Drain Voltage of Drain Current With Capacitance-Voltage Measurement Method in GaN HEMTs1
IEEE Transactions on Device and Materials Reliability Publication Information1
Die-Attach Influence on Thermal/Electrical Parameters of GaN RF Device1
The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode1
Characterization of Electromagnetic Susceptibility in Optocouplers Exposed to Different Interference Waveforms1
Effect of Large Amplitude Thermal Cycles on Power Assemblies Based on Ceramic Heat Sink and Multilayer Pressureless Silver Sintering1
IEEE Transactions on Device and Materials Reliability Publication Information1
Moisture Dependent Degradation Rate of Silicone in LED Optical Housing Material—Ab-Initio Modelling1
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation1
Layered Trench Gate Exhibiting Source/Drain Over-Etch Immunity Without Punch-Through Stopper1
In-Field Testing of Functionally-Possible Transition Faults With High Activation Frequencies1
Numerical Simulation of Trapped Hole Lateral Migration and Induced Threshold Voltage Retention Loss in a SONOS Flash Memory1
A Process-Robust Split-Gate eFlash Memory With Spacer-Defined Floating Gate in 55-nm Node1
A Gate-Level SER Estimation Tool With Event-Driven Dynamic Timing and SET Height Consideration1
A Low-Area Overhead and Low-Delay Triple-Node-Upset Self-Recoverable Design Based on Stacked Transistors1
Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications1
Thermal Stress Impact on Electrical Conductivity and Microstructure of Thin Aluminum Films Deposited on Polyethylene Terephthalate Substrates1
Investigation of Switching Characteristics Degradation of GaN HEMT Under Power Cycling Aging1
An Improved Thermal Network Model of Press-Pack IGBT Modules Considering Contact Surface Damage1
Assessing the Reliability of DRAM CMOS Periphery: Comparing AC and DC Conditions for BTI and TDDB1
System-Level Lifetime Extension in 3D NAND SSDs via V T -Shift-Aware Flash Signal Processing and A1
Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model1
Table of Contents1
On-Chip Heater Design and Control Methodology for Reliability Testing Applications Requiring Over 300°C Local Temperatures1
IEEE Transactions on Device and Materials Reliability Publication Information1
Investigation of Single-Event Burnout in Laterally-Diffused Metal-Oxide Semiconductor for Power Modulation Circuits1
Optimization of 3-D IC Routing Based on Thermal Equalization Analysis1
A Snapback-Free RC-LIGBT Integrated with Three-Mode Self-Adaptive nMOS for Improved Performance and Reliability1
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by Means of Impedance Spectroscopy1
The Failure Mechanism of Internal Circuit During ESD Striking a Power to Another Power1
Reliability Correlation Coefficient of Fail Bit Counts of Flash Memory1
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers1
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Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements1
Impact of Total Ionizing Dose on the Electrical Performance of Silicon Carbide MOSFET1
Electrical Behavior at Cryogenic Temperature of the Radiation-Tolerant Hourglass MOS Transistor1
Radiation Hardened Domino Logic-Based Schmitt Trigger Circuit With Improved Noise Immunity1
Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction1
AdAM: Adaptive Approximate Multiplier for Fault Tolerance in DNN Accelerators1
Detection and Analysis of Stress Wave in MOSFET Under Gate-Source Overvoltage Failure1
A Novel Si/SiC Heterojunction LDMOS With Improved Reverse Recovery and SEB Performances1
PEAR: Unbalanced Inter-Page Errors Aware Read Scheme for Latency-Efficient 3-D NAND Flash1
2022 Index IEEE Transactions on Device and Materials Reliability Vol. 221
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