OOIR: Observatory of International Research

Papers

(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)

Article	Citations
From Mega to nano: Beyond one Century of Vacuum Electronics	55
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers	53
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability	40
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data	31
On the Response Time constant of Interface Defects in Accumulation	26
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators	25
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via	24
Editorial	20
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module	19
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability	19
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters	19
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization	18
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology	16
IEEE Transactions on Device and Materials Reliability Publication Information	16
Reliability of Advanced Nodes	16
IEEE Transactions on Device and Materials Reliability Publication Information	16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI	15
Research of Single-Event Burnout in P-NiO/n-Ga₂O₃ Heterojunction Diode	15
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs	14
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs	14
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition	14
IEEE Transactions on Device and Materials Reliability Publication Information	14
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm	14
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes	14
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects	14

Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies	14
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging	13
Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface	13
Effects of Electrolyte Volume on Electrochemical Migration of Tin in Water Drop Test	13
Table of Contents	12
Member Get-A-Member (MGM) Program	12
Introducing IEEE Collabratec	12
TechRxiv: Share Your Preprint Research with the World!	12
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability	11
Electrical Switching Safe Operation Area on GaN Bidirectional Switches Under Hard-Switching Conditions by Multiple Pulse Test	11
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method	11
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂Transistors	11
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness	11
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process	10
IEEE Transactions on Device and Materials Reliability Publication Information	10
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning	10
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET	10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions	10
IEEE Transactions on Device and Materials Reliability Information for Authors	10
Non-Traditional Operational Mechanisms of NbO _x -Based Threshold Switching Devices Used on On-Chip ESD Protection	10
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects	9
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications	9
From Mega to nano: Beyond one Century of Vacuum Electronics	9
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design	9
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation	8
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography	8
Open Model Interface Assisted NBTI-Aware Design With Dual-V_th Logic Synthesis Strategy for Reliability Improvement	8
[Blank page]	8
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress	8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter	8
TechRxiv: Share Your Preprint Research with the World!	8
Blank Page	8
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles	8
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits	8
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance	8
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability	8
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor	8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems	8
Table of Contents	8
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators	8
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs	7
Blank Page	7
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs	7
Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications	7
IEEE Transactions on Device and MaterialsReliability publication information	7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks	7
TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N ⁺ -PolySi/SiC HeteroJunction Diode for Improved Third Quadrant and High Temperature	7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y₂O₃ Gate Dielectric	7
Influence of Critical Working Conditions on Stability of Varistor Characteristics	6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET	6

Analytical Model for Cu Interconnect Lifetimes Under Combined Thermomigration and Electromigration Stress	6
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters	6
Lifetime Prediction Method for IGBT Modules Under Combined Power Cycling–Vibration Conditions	6
Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling	6
TechRxiv: Share Your Preprint Research with the World!	6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET	6
An Efficient Modeling Approach for Electrothermal Migration Analysis of On-Chip Interconnects	6
High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment	6
IEEE Transactions on Device and Materials Reliability Publication Information	5
Wide Band Gap Semiconductors for Automotive Applications	5
Call for Nominations for Editor-in-Chief	5
A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications	5
Error-Corrected RRAM-Based Compute-in-Memory Accelerator Using Voltage-Clamp Current Mirror	5
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing	5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO₂/Al₂O₃ and Al₂O₃/HfO₂/Al₂O₃ Gate	5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI	5
IEEE Transactions on Device and Materials Reliability Information for Authors	5
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges	5
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field	5
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array	5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D ₂ and N ₂ Annealing	5
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators	4
Memristive Switching Behavior of MoO₃ Decorated PSi Heterostructure and Impact of Temperature on Device Reliability	4
Digital Probing of Activation Energy for Evaluating Reliability in 2D and 3D NAND Flash Memory	4
Table of Contents	4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy	4
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin	4
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs	4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests	4
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique	4
Analysis of Multicrystalline Si Solar Cell Degradation Due To Reverse Bias and High Temperature Aging	4
Comparison of Different Input Data for the Prediction of LED Solder Joints Using Artificial Neural Networks	4
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices	4
IEEE Transactions on Device and Materials Reliability information for authors	4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints	4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure	4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects	4
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN	4
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects	4
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method	4
IEEE Transactions on Device and Materials Reliability Information for Authors	4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Modules	4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications	4
Reliability of Advanced Nodes	4