IEEE Transactions on Device and Materials Reliability

Papers
(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
From Mega to nano: Beyond one Century of Vacuum Electronics53
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers50
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters35
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via29
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module24
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability23
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization23
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability23
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators23
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data22
IEEE Transactions on Device and Materials Reliability Publication Information18
IEEE Transactions on Device and Materials Reliability Publication Information18
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI17
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology17
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode16
Reliability of Advanced Nodes16
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition15
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes15
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs14
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs14
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects14
Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter13
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies13
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs13
IEEE Transactions on Device and Materials Reliability Publication Information13
Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface13
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm13
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method12
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging12
Introducing IEEE Collabratec12
Member Get-A-Member (MGM) Program12
Table of Contents12
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness12
TechRxiv: Share Your Preprint Research with the World!12
Non-Traditional Operational Mechanisms of NbOx-Based Threshold Switching Devices Used on on-Chip ESD Protection11
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors11
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability11
IEEE Transactions on Device and Materials Reliability Publication Information10
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process10
From Mega to nano: Beyond one Century of Vacuum Electronics10
IEEE Transactions on Device and Materials Reliability Information for Authors10
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning10
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects10
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions10
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process10
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications9
An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory9
Open Model Interface Assisted NBTI-Aware Design With Dual-Vth Logic Synthesis Strategy for Reliability Improvement9
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design9
TechRxiv: Share Your Preprint Research with the World!9
Blank Page9
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation9
Erratum to “Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool”9
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability9
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor9
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography9
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric8
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits8
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems8
Table of Contents8
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter8
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs8
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress8
Development of Accelerated Life Testing Apparatus for Light-Emitting Diode Therapy8
[Blank page]8
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
TechRxiv: Share Your Preprint Research with the World!7
Blank Page7
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs7
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance7
Influence of Critical Working Conditions on Stability of Varistor Characteristics7
Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications7
IEEE Transactions on Device and MaterialsReliability publication information7
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters7
Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling6
An Efficient Modeling Approach for Electrothermal Migration Analysis of On-Chip Interconnects6
Lifetime Prediction Method for IGBT Modules Under Combined Power Cycling–Vibration Conditions6
IEEE Transactions on Device and Materials Reliability Publication Information6
Introducing IEEE Collabratec6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges6
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity6
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET6
Error-Corrected RRAM-Based Compute-in-Memory Accelerator Using Voltage-Clamp Current Mirror6
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing6
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field6
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators5
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method5
Call for Nominations for Editor-in-Chief5
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects5
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability5
Wide Band Gap Semiconductors for Automotive Applications5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Analysis of Multicrystalline Si Solar Cell Degradation Due To Reverse Bias and High Temperature Aging5
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array5
IEEE Transactions on Device and Materials Reliability Information for Authors5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
IEEE Transactions on Device and Materials Reliability information for authors4
Metallization Reliability of GaN-Based High-Voltage Light-Emitting Diodes4
A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
Soft-Error-Aware SRAM for Terrestrial Applications4
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"4
Reliability of Advanced Nodes4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Modules4
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique4
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs4
Front Cover4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications4
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 234
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
IEEE Transactions on Device and Materials Reliability Information for Authors4
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN4
Table of Contents4
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
IEEE Transactions on Device and MaterialsReliability publication information4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy4
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