IEEE Transactions on Device and Materials Reliability

Papers
(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
From Mega to nano: Beyond one Century of Vacuum Electronics59
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers55
Editorial34
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators31
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability30
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data28
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability28
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization26
Package-Level Electro-Thermal Simulation With Transient Thermal Resistance Model for Surge Stress Failure Analysis of SiC MOSFET23
On the Response Time Constant of Interface Defects in Accumulation22
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module21
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters21
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via20
IEEE Transactions on Device and Materials Reliability Publication Information19
Reliability of Advanced Nodes18
IEEE Transactions on Device and Materials Reliability Publication Information18
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology17
Table of Contents16
Stability in Electroluminescence from Ag-NSi Schottky Junction LED: Role of Ambient Oxidation16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI16
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes15
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition15
IEEE Transactions on Device and Materials Reliability Publication Information15
Research of Single-Event Burnout in P-NiO/n-Ga 2 O 3 Heterojunction Diode15
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects15
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs14
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging14
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm13
Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface13
Effects of Electrolyte Volume on Electrochemical Migration of Tin in Water Drop Test13
Impact of Substrate connection on Dynamic-R ON drift of 650V normally-off Monolithic Bidirectional AlGaN/GaN HEMT12
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs12
Table of Contents12
IEEE Transactions on Device and Materials Reliability Publication Information12
Introducing IEEE Collabratec11
Electrical Switching Safe Operation Area on GaN Bidirectional Switches Under Hard-Switching Conditions by Multiple Pulse Test11
Member Get-A-Member (MGM) Program11
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors11
TechRxiv: Share Your Preprint Research with the World!11
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness11
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method10
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning10
Avalanche Failure Mechanisms of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes with Various Epilayer Defects10
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability10
IEEE Transactions on Device and Materials Reliability Information for Authors10
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process10
Non-Traditional Operational Mechanisms of NbO x -Based Threshold Switching Devices Used on On-Chip ESD Protection10
IEEE Transactions on Device and Materials Reliability Publication Information10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions10
Reliability Analysis of IGZO Thin Film Transistor for Wearable Biosensing Applications10
TechRxiv: Share Your Preprint Research with the World!9
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography9
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications9
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET9
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability9
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects9
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor9
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design9
Blank Page9
Open Model Interface Assisted NBTI-Aware Design With Dual-V th Logic Synthesis Strategy for Reliability Improvement9
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits8
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs8
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance8
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles8
Table of Contents8
Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications8
NAVIgator under Fire: Characterizing Voltage Limits and Soft Error Resilience of AMD NAVI GPUs8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter8
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs8
Mitigating the Process Variations in Negative Capacitance Junctionless Device and Circuit8
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation8
SiC MOSFET Gate-Oxide and SiC/SiO 2 Interface Defect Charge Movement Based on the Hi-Lo C ISS7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric7
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress7
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters7
TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N + -PolySi/SiC Heterojunction Diode for Improved Third-Quadrant and High-Temperature7
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems7
Blank Page7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
Semi-empirical Modeling of Hot Carrier Degradation in 12 nm FinFET LDMOS devices7
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators7
TechRxiv: Share Your Preprint Research with the World!7
Analytical Model for Cu Interconnect Lifetimes Under Combined Thermomigration and Electromigration Stress6
Influence of Critical Working Conditions on Stability of Varistor Characteristics6
High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment6
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field6
An Efficient Modeling Approach for Electrothermal Migration Analysis of On-Chip Interconnects6
Error-Corrected RRAM-Based Compute-in-Memory Accelerator Using Voltage-Clamp Current Mirror6
IEEE Transactions on Device and Materials Reliability Publication Information6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET6
Key Factors Affecting Dynamic Reliability in GaN HEMTs and How Can They Be Mitigated?6
Lifetime Prediction Method for IGBT Modules Under Combined Power Cycling–Vibration Conditions6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Analysis and Structural Mitigation of Trapping-State-Trap Induced Drain Leakage Current in Buried-Channel-Array-Transistor6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing6
Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling6
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method5
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects5
IEEE Transactions on Device and Materials Reliability Information for Authors5
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing5
A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
Call for Nominations for Editor-in-Chief5
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique5
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices5
Wide Band Gap Semiconductors for Automotive Applications5
IEEE Transactions on Device and Materials Reliability Information for Authors4
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array4
Digital Probing of Activation Energy for Evaluating Reliability in 2-D and 3-D NAND Flash Memory4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors4
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin4
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications4
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN4
Table of Contents4
Comparison of Different Input Data for the Prediction of LED Solder Joints Using Artificial Neural Networks4
Reliability of Advanced Nodes4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Modules4
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"4
Fast Heater‑Based NBTI Resolves the Reverse Antenna Effect in PID‑Degraded High‑k and SiO 2 pMOSFETs4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators4
Analysis of Multicrystalline Si Solar Cell Degradation Due to Reverse Bias and High Temperature Aging4
SafeHDC: Concurrent Uncertainty and Fault Detection in Hyperdimensional Computing4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy4
Front Cover4
IEEE Transactions on Device and MaterialsReliability publication information4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
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