IEEE Transactions on Device and Materials Reliability

Papers
(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-08-01 to 2025-08-01.)
ArticleCitations
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers50
From Mega to nano: Beyond one Century of Vacuum Electronics46
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations32
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via25
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters24
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data23
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators22
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization21
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module20
IEEE Transactions on Device and Materials Reliability Publication Information19
Reliability of Advanced Nodes19
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes19
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs18
IEEE Transactions on Device and Materials Reliability Publication Information17
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode15
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition15
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging14
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI14
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm14
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology14
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects13
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs13
Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter13
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies13
Mitigation Technique for Single Event Transient via Pulse Quenching13
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection13
IEEE Transactions on Device and Materials Reliability Publication Information13
Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs13
Introducing IEEE Collabratec12
Table of Contents12
Member Get-A-Member (MGM) Program12
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs12
IEEE Transactions on Device and Materials Reliability Publication Information11
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness11
TechRxiv: Share Your Preprint Research with the World!11
IEEE Transactions on Device and Materials Reliability Information for Authors11
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability11
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method11
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors11
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process10
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET10
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning10
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process10
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects9
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs9
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications9
Blank Page9
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design9
An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory9
TechRxiv: Share Your Preprint Research with the World!9
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors9
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions9
From Mega to nano: Beyond one Century of Vacuum Electronics9
Erratum to “Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool”9
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability9
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems8
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs8
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles8
Open Model Interface Assisted NBTI-Aware Design With Dual-Vth Logic Synthesis Strategy for Reliability Improvement8
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter8
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor8
Development of Accelerated Life Testing Apparatus for Light-Emitting Diode Therapy8
[Blank page]8
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits8
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography8
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators7
Blank Page7
Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory7
IEEE Transactions on Device and MaterialsReliability publication information7
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress7
Table of Contents7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric7
Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers7
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
TechRxiv: Share Your Preprint Research with the World!7
Influence of Critical Working Conditions on Stability of Varistor Characteristics7
Introducing IEEE Collabratec6
IEEE Transactions on Device and Materials Reliability Publication Information6
IEEE Transactions on Device and Materials Reliability Information for Authors6
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters6
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges6
Wide Band Gap Semiconductors for Automotive Applications6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing6
Lifetime Prediction Method For IGBT Modules Under Combined Power Cycling–Vibration Conditions6
Call for Nominations for Editor-in-Chief5
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique5
Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed With Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study5
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability5
Metallization Reliability of GaN-Based High-Voltage Light-Emitting Diodes5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing5
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method5
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects5
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators5
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array5
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs4
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"4
Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation4
Analysis of Multicrystalline Si Solar Cell Degradation Due To Reverse Bias and High Temperature Aging4
IEEE Transactions on Device and Materials Reliability information for authors4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Module4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Front Cover4
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 234
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability4
Table of Contents4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
Soft-Error-Aware SRAM for Terrestrial Applications4
Power Durability Enhancement and Failure Analysis of TC-SAW Filter With Ti/Cu/Ti/Cu/Ti Electrodes4
IEEE Transactions on Device and MaterialsReliability publication information4
Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors4
IEEE Transactions on Device and Materials Reliability Information for Authors4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
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