IEEE Transactions on Device and Materials Reliability

Papers
(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-05-01 to 2024-05-01.)
ArticleCitations
Impact of Interface Trap Charges on Analog/RF and Linearity Performances of Dual-Material Gate-Oxide-Stack Double-Gate TFET52
Critical Insights Into Fast Charging Techniques for Lithium-Ion Batteries in Electric Vehicles43
Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications35
Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective32
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs28
EMSpice: Physics-Based Electromigration Check Using Coupled Electronic and Stress Simulation23
High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors23
Design of High-Speed Low Variation Static Noise Margin Ternary S-RAM Cells20
Exceeding Conservative Limits: A Consolidated Analysis on Modern Hardware Margins20
Reliability-Aware Design Strategies for Stateful Logic-in-Memory Architectures19
Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors18
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode18
Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement18
Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications18
LED Lifetime Prediction Under Thermal-Electrical Stress17
Short Circuit Detection and Fault Current Limiting Method for IGBTs15
Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs14
Reliability-Oriented Automated Design of Double-Sided Cooling Power Module: A Thermo-Mechanical-Coordinated and Multi-Objective-Oriented Optimization Methodology14
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks13
SRAM Radiation Hardening Through Self-Refresh Operation and Error Correction13
A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application13
Soft-Error-Aware SRAM for Terrestrial Applications13
Aging Diagnosis of Bond Wire Using On-State Drain-Source Voltage Separation for SiC MOSFET12
TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT12
Fundamental Thermal Limits on Data Retention in Low-Voltage CMOS Latches and SRAM12
ESD Protection Designs: Topical Overview and Perspective12
Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics11
Reliability Analysis of Power Components in Restructured DC/DC Converters11
Solder Joint Reliability Assessment and Pad Size Studies of FO-WLP With Glass Substrate11
Copper Trace Fatigue Life Modeling for Rigid Electronic Assemblies10
Reliability Assessment of GaAs/Al₂O₃ Junctionless FinFET in the Presence of Interfacial Layer Defects and Radiations10
Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips10
Investigation of Single Event Transient Effects in Junctionless Accumulation Mode MOSFET10
Time and Temperature Dependence of Copper Protrusion in Metallized Through-Glass Vias (TGVs) Fabricated in Fused Silica Substrate10
Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors10
A New Scheme of the Low-Cost Multiple-Node-Upset-Tolerant Latch9
A Physics-Based Single Event Transient Pulse Width Model for CMOS VLSI Circuits9
Machine Learning Approach for Prediction of Point Defect Effect in FinFET9
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization9
Accelerated Degradation of IGBTs Due to High Gate Voltage at Various Temperature Environments9
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs9
Single Event Transients in Sub-10nm SOI MuGFETs Due to Heavy-Ion Irradiation9
Reliability and Performance Analysis of Logic-in-Memory Based Binarized Neural Networks9
A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications9
Reliable and Radiation-Hardened Push-Pull pFlash Cell for Reconfigured FPGAs9
Reliability of NAND Flash Memory as a Weight Storage Device of Artificial Neural Network9
Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs8
Design of Compact Reliable Energy Efficient Read Disturb Free 17T CNFET Ternary S-RAM Cell8
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs8
Stealthy Information Leakage Through Peripheral Exploitation in Modern Embedded Systems8
CMOS Reliability From Past to Future: A Survey of Requirements, Trends, and Prediction Methods8
CMOS-Compatible Ex-Situ Incorporated Junctionless Enhancement-Mode Thin Polysilicon Film FET pH Sensor8
Investigation of Self-Heating Effect in Tree-FETs by Interbridging Stacked Nanosheets: A Reliability Perspective8
Novel ESD Compact Modeling Methodology Using Machine Learning Techniques for Snapback and Non-Snapback ESD Devices8
Automated Die Inking8
Next-Generation High-Density PCB Development by Fan-Out RDL Technology8
MOZART+: Masking Outputs With Zeros for Improved Architectural Robustness and Testing of DNN Accelerators8
Design for High Reliability of CMOS IC With Tolerance on Total Ionizing Dose Effect7
Reliability Characterization of Ring Oscillator Circuits for Advanced CMOS Technologies7
The Novel Structure to Enhancement Ion /Ioff Ratio Based on Field Effect Diode7
Energy Transformation Between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test7
A Novel DTSCR With Embedded MOS and Island Diodes for ESD Protection of High-Speed ICs7
Impact of Gamma-Ray Radiation on DC and RF Performance of 10-nm Bulk N-Channel FinFETs7
Cell-Aware Defect Diagnosis of Customer Returns Based on Supervised Learning7
Single Event Transient (SET) Mitigation Circuits With Immune Leaf Nodes7
Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices7
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach7
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs7
A Gated-Diode ESD SCR-Incorporated BJT for Reversed Floating P⁺ Junction Modulation7
Trap-Assisted and Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs7
A Soft Error Detection and Recovery Flip-Flop for Aggressive Designs With High-Performance7
Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs7
Impact of Dimensions of Memory Periphery FinFETs on Bias Temperature Instability7
The TID Characteristics of a Radiation Hardened Sense-Switch pFLASH Cell6
High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation6
Qualitative and Quantitative Diagnostic Device for Detecting Defects in Crystalline Silicon PV Cells6
Stress Analysis and Characterization of PECVD Oxide/Nitride Multi-Layered Films After Thermal Cycling6
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate6
Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments6
Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment6
Demonstration of an Equivalent Material Approach for the Strain-Induced Reliability Estimation of Stacked-Chip Packaging6
Effect of Titanium-Polymer Interactions on Adhesion of Polymer-Copper Redistribution Layers in Advanced Packaging6
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection6
Elimination of Thermo-Mechanically Driven Circumferential Crack Formation in Copper Through-Glass via Substrate6
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET’s6
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K6
Low Temperature and High Pressure Oxidized Al2O3as Gate Dielectric for AlInN/GaN MIS-HEMTs5
Hybrid Multi-Graphene/Si Avalanche Transit Time <h-ATT> Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies5
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure5
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending5
The Influence of N-Type Buried Layer on SCR ESD Protection Devices5
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs5
Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress5
LED Reliability Assessment Using a Novel Monte Carlo-Based Algorithm5
On-Chip Adaptive VDD Scaled Architecture of Reliable SRAM Cell With Improved Soft Error Tolerance5
BTI and Soft-Error Tolerant Voltage Bootstrapped Schmitt Trigger Circuit5
Investigation of Chip Temperature on Response Characteristics of the Humidity Sensor From ppm to %RH5
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process4
STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance4
A Study of the Relationship Between Endurance and Retention Reliability for a HfOₓ-Based Resistive Switching Memory4
Run-Time Protection of Multi-Core Processors From Power-Noise Denial-of-Service Attacks4
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET4
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI4
Design and Analysis of Leakage-Induced False Error Tolerant Error Detecting Latch for Sub/Near-Threshold Applications4
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via4
Reliability Characterization and Failure Prediction of 3D TLC SSDs in Large-Scale Storage Systems4
Online Research on Reliability of Thermal-Vibration Coupling for PLC Optical Splitters4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs4
Effect of Different PBO-Based RDL Structures on Chip-Package Interaction Reliability of Wafer Level Package4
Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs4
Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays4
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations4
Review of Double-Sided Cooling Power Modules for Driving Electric Vehicles4
Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)4
Low-Leakage and Variable V HOLD Power Clamp for Wide Stress Time Range From ESD to Surge Test4
Metallic Ratio Equivalent-Time Sampling and Application to TDC Linearity Calibration4
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors4
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022)4
Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs4
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs4
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles4
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