Journal of Semiconductor Technology and Science

Papers
(The TQCC of Journal of Semiconductor Technology and Science is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-06-01 to 2025-06-01.)
ArticleCitations
Design and Analysis of DC/DC Boost Converter Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire20
Implementation and Performance Analysis of Elliptic Curve Cryptography using an Efficient Multiplier10
An 80 dB Second-order Noise Shaping SAR ADC using Differential Integral Capacitors and Comparator with Voltage Gain Calibration6
A New Coupling Spring Design for MEMS Tuning Fork Structures Demonstrating Robustness to Fabrication Errors and Linear Accelerations6
A 262 MHz Narrow Band RF Transceiver for Korean M-Bus Smart Metering Service5
Periodic Ground Structure for C-PHY Signaling in Mobile Applications5
2 Lanes × 2.65-6.4 Gb/s Scalable IO Transceiver with Delay Compensation Technique in 65 nm CMOS Process5
A 97.7-dB DR 12.3-μW 1-kHz Bandwidth 2<SUP>nd</SUP> Order Delta-sigma Modulator with a Fully Differential Class-AB Op-Amp using Floating Class-AB Control4
Scalable Fabrication of Flexible Large-area Inverted Organic Photovoltaic Cells3
Empirical Analysis of Disaggregated Cloud Memory on Memory Intensive Applications3
Chemoresistive Gas Sensors for Food Quality Monitoring3
Analysis of Cell Current with Abnormal Channel Profile in 3D NAND Flash Memory3
Design of an Approximate Adder based on Modified Full Adder and Nonzero Truncation for Machine Learning3
Prediction Methodology for Next-generation Device Characteristics using Machine Learning3
Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current3
Design of ZnO with Reduced Direct Bandgap using First-principles Calculation: Electronic, Band Structure, and Optical Properties3
Analysis of the Switching Mechanism of Hafnium Oxide Layer with Nanoporous Structure by RF Sputtering2
High-performance Sum Operation with Charge Saving and Sharing Circuit for MRAM-based In-memory Computing2
A 16 GHz 1-511 Broadband Programmable Frequency Divider2
Fault-tolerant Algebraic Interleaver Architecture for IDMA Systems in Harsh Environments2
Efficient Partially-parallel NTT Processor for Lattice-based Post-quantum Cryptography2
Synaptic Device based on Resistive Switching Memory using Single-walled Carbon Nanotubes2
Study on the Circuit Performance of Various Interconnect Metal Materials in the Latest Process Nodes2
D-RDMALib: InfiniBand-based RDMA Library for Distributed Cluster Applications2
Investigation of Mechanical Stability during Electro-thermal Annealing in a 3D NAND Flash Memory String2
Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si2
BTI Tolerant Clock Tree Synthesis using LP-based Supply Voltage Alignment2
A 20-Gb/s PAM-4 Receiver with Dual-mode Threshold Voltage Adaptation using a Time-based LSB Decoder2
Lossless LUT Compressions for Image Enhancement2
Design of Various Dipolar Source for Improvement of Electrostatic Discharge Protection Performance of 0.18 μm_30 V DDDNMOS Transistor for High Voltage Application2
A Second-order Delta-sigma Modulator for Battery Management System DC Measurement2
All-directional Electrostatic-discharge Protection Circuit with High Area-efficiency2
CMOS Nonmagnetic Circulator and Band-Selection Balun-Low Noise Amplifier with RF Self-Interference Cancellation for Advanced In-Band Full-Duplex Transceiver2
Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM1
Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL1
Radiation Tolerant by Design 12-transistor Static Random Access Memory1
A 39.8% Locking Range Injection-locked Quadrature Voltage-controlled Oscillator using Fourth-order Resonator1
Analysis of High Temperature Characteristics of Double Gate Feedback Field Effect Transistor1
Surface Stoichiometry Dependence of Ambipolar SiGe Tunnel Field-effect Transistors and Its Effect on the Transient Performance Improvement1
Sub-6 GHz Noise-cancelling Balun-LNTA with Dual-band Q-enhanced LC Notch Filter for 5G New Radio Cellular Applications1
HLS-based HW/SW Co-design and Hybrid HLS-RTL Design for Post-Quantum Cryptosystem1
Inductorless Broadband Transimpedance Amplifier for 25-Gb/s NRZ and 50-Gb/s PAM-4 Operations in a 90-nm CMOS Technology1
A Wideband Sub-㎓ Receiver Front-end Supporting High Sensitivity and Selectivity Mode1
A 99.93% Peak Current Efficiency Digital-LDO using Single VCO With Dual Frequency Gain Control1
A Self-aligned Process for Simultaneous Fabrication of Short Channel and Spacer in Semiconductor Devices1
FPGA-based SPI Module System Implementation for Various DPS Evaluations in ATE1
Electrostatic Force Simulation Comparison of Tilted Plate Actuator and Conventional Actuator1
Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array1
CMOS Diodes under Cryogenic Temperature and High Magnetic Field Environment1
Analysis and Prediction of Nanowire TFET’s Work Function Variation1
Optimization of FinFET’s Fin Width and Height with Self-heating Effect1
2.4 GHz Low-power Receiver Front-end Employing I/Q Mixer with Current-reused Quadrature Transconductor for Bluetooth Low Energy Applications1
A 4.5-to-14 GHz PLL-based Clock Driver with Wide-range 3-shaped LC-VCOs for GDDR6 DRAM Test1
Charge Trap Flash structure with Feedback Field Effect Transistor for Processing in Memory1
Deep Learning Segmentation Modeling for SiN, SiO<SUB>2</SUB> Film Deposition Process Defect of High Bandwidth Memory1
A Compact 6-bit Phase Shifter in 65 nm RF CMOS Technology for ISM Band1
A 32.2 GHz Full Adder Designed with TLE Method in a InP DHBT Technology1
A 0.13 μm CMOS UWB Radar Receiver Front-end with Differential Error-correction and Feedback Gain via Back-to-back Regeneration and Bandwidth Staggering1
A Sound Activity Monitor with 96.3 μs Wake-up Time and 2.5 μW Power Consumption1
Reliable Oscillatory Neural Network Utilizing a Thermally Stable Single Transistor-based Oscillator1
A 10 Gb/s MIPI D-PHY Receiver with Auto-skew Calibration Circuit using Random Data1
A Low-power Incremental Delta-sigma ADC with Adaptive Biasing for CMOS Image Sensors1
An 11-bit 160-MS/s Non-binary C-based SAR ADC with a Partially Monotonic Switching Scheme1
Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure1
Vertical Double-gate SiC/Si/SiC Quantum-well 1T DRAM and Its High-temperature Performances1
A Spread Spectrum Clock Generator with Dual-tone Hershey-Kiss Modulation Profile1
A Comprehensive Review on High-efficiency RF-DC Converter for Energy Harvesting Applications1
A 0.1-3 GHz Wide Bandwidth Ring VCO Fractional-N PLL with Phase Interpolator in 8 nm FinFET CMOS1
Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure1
A Secure Scan Design based on Scan Scrambling by Pseudorandom Values and Circuit Itself1
Research of Quantized Current Effect with Work Function Variation in Tunnel-field Effect Transistor1
Effects of Oxygen Injection Rates on a-IGZO Thin-film Transistors with Oxygen Plasma Treatment1
Time-interleaved Noise-shaping SAR ADC based on CIFF Architecture with Redundancy Error Correction Technique1
Phonons and Valence-band Splitting in Strained GaAs<SUB>1-x</SUB>N<SUB>x</SUB>/GaAs Epilayers1
Three-dimensional Modeling for the Transmittance of ITO/Mesh-Ag/ITO Multilayers using FDTD1
Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor1
High-PSRR Low-dropout Regulator with Fast Transient Response Time and Low Output Peak Voltage1
An Extensive PUF of Bistable Rings Feed-forward Chains with Lightweight Secure Architecture for Enhanced ML Attack Resistance1
A 28 Gb/s Receiver Front-end Capable of Receiving Wide Range Current Signal in 65 nm CMOS1
Research on Sensor Functionality of Next-generation Intelligent Semiconductor Devices using Ga₂O₃-based UV-C Detector Under Commercial Conditions1
A Digital FLL-based Sub-harmonically Injection-locked PLL with Resolution-multiplied TDC for Frequency Offset Cancellation1
Quantitative Analysis of Channel Width Effects on Electrical Performance Degradation of Top-gate Self-aligned Coplanar IGZO Thin-film Transistors under Self-heating Stresses1
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