Electronic Materials Letters

Papers
(The H4-Index of Electronic Materials Letters is 14. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-06-01 to 2025-06-01.)
ArticleCitations
Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints44
Investigation of Crystallography and Charge Transfer Dynamics of CeO2–ZnO Nanocomposites Prepared via Facial Thermal Decomposition35
Role of Liquid Metal in Flexible Electronics and Envisage with the Aid of Patent Landscape: A Conspicuous Review32
Effect of Pyrene-1 Boronic Acid Functionalization on the Electrical Characteristics of Carbon Nanotube Field-Effect Transistor25
Electronic, Thermal, and Thermoelectric Properties of Ni-Doped FeTe2 Polycrystalline Alloys25
Surface Functionalization of Indium Tin Oxide Electrodes by Self-assembled Monolayers for Direct Assembly of Pre-synthesized SnO2 Nanocrystals as Electron Transport Layers22
Microstructure, Photoluminescence and Electrical Properties of SmxGd(1−x): SrO Hybrid Nanomaterials Synthesized via Facile Coprecipitation Method22
Structural Analysis of InAs1−xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction21
Fabricating Fe3O4 and Fe3O4&Fe Flower-Like Microspheres for Electromagnetic Wave Absorbing in C and X Bands21
Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process20
Study on Silane Coupling Agent Treated Silica Nanoparticles Filled High Performance Copper Clad Laminate19
Hydrangea Macrophylla-Like CeO2 Coated by Nitrogen-Doped Carbon as Highly Efficient ORR Cathode Catalyst in a Hybrid Proton Battery19
Physical Effects of 2PACz Layers as Hole-Transport Material on the Performance of Perovskite Solar Cell17
Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers17
Flexible Strain Sensor Based on AgNWs/MXene/SEBS with High Sensitivity and Wide Strain Range14
A Simple Intermediate Approach of Sputter Deposition at Room Temperature for Improving the Stability of a-InGaZnO Thin Film Transistors14
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