IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 14. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Trap Analysis of Normally-Off Ga₂O₃ MOSFET Enabled by Charge Trapping Layer: Photon Stimulated Characterization and TDDB40
A New 13T4C LTPO MicroLED Pixel Circuit Producing Highly Stable Driving Current by Minimizing Effect of Parasitic Capacitors and Stabilizing Capacitor Nodes31
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination31
Piston-Mode pMUT With Mass Load29
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction26
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism26
Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices22
Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si20
Special Section on ESSDERC 202118
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs18
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss16
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology16
The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs15
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs15
A Retina-Inspired Image Sensor Array Based on Randomly-Accessible Active Pixel Sensor14
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs14
Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger14
Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform14
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