OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Journal of the Electron Devices Society is 17. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)

Article	Citations
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes	50
Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization	39
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module	37
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs	37
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications	35
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode	34
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe₂/MoS₂ Heterojunction Diode at Cryogenic Temperatures	31
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates	27
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM	26
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing	21
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile	21
Enhanced Low-Damage Quantitative Hybrid Cyclic Etching for AlGaN/GaN Heteroepitaxy: Process Optimization and Device Performance Improvement	18
A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation	18
Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge	18
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application	17
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga₂O₃/Si Schottky Barrier Diodes	17
A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models	17
Investigation of DC and Low-Frequency Noise Performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K–420 K	17