IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 20. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
Golden List of Reviewers for 202263
Special Section on ESSDERC 202151
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes45
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications41
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates36
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs34
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module34
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs33
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM29
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode27
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile27
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures26
Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization24
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter 24
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism24
Investigation of DC and Low-Frequency Noise Performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K–420 K23
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing22
Enhancing Interpretability of Neural Compact Models: Toward Reliable Device Modeling22
A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation21
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes20
Ga 2 O 3 -Graphene Hybrid Structure for Near-Infrared Metasurface Absorber20
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