IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 17. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes50
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates38
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM36
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications35
Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization33
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode31
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile28
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module27
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs26
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures20
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing19
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application18
Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge17
Enhanced Low-Damage Quantitative Hybrid Cyclic Etching for AlGaN/GaN Heteroepitaxy: Process Optimization and Device Performance Improvement17
Potentiometric MgO Film pH Sensor Measurement Analysis and Integrated Flexible Printed Circuit Board17
Improved On-Resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film17
Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory17
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