IEEE Journal of the Electron Devices Society

Papers
(The median citation count of IEEE Journal of the Electron Devices Society is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Trap Analysis of Normally-Off Ga₂O₃ MOSFET Enabled by Charge Trapping Layer: Photon Stimulated Characterization and TDDB40
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination31
A New 13T4C LTPO MicroLED Pixel Circuit Producing Highly Stable Driving Current by Minimizing Effect of Parasitic Capacitors and Stabilizing Capacitor Nodes31
Piston-Mode pMUT With Mass Load29
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism26
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction26
Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices22
Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si20
Special Section on ESSDERC 202118
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs18
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology16
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss16
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs15
The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs15
Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger14
Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform14
A Retina-Inspired Image Sensor Array Based on Randomly-Accessible Active Pixel Sensor14
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs14
Hybrid Soldering 2.3D Assembly With High Reliability and Low Cost13
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Co13
Performance Enhancement of Asymmetrical Double Gate Junctionless CMOS Inverter With 3-nm Critical Feature Size Using Charge Sheet13
Guest Editorial Special Section on EDTM 202213
Bit Depth of Drivers for Micro-LED Displays Adopting Low-Temperature Polysilicon Oxide Thin-Film Transistors11
Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs11
A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding11
Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks11
Study on Flake Graphite Cathode Surface Microstructure in Relativistic Magnetrons11
Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors11
Ultrafast ID VG Technique for Reliable Cryogenic Device Characterization11
Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides10
Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions10
High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs10
Small-Signal and Large-Signal RF Characterization and Modeling of Low and High Voltage FinFETs for 14/16 nm Technology Node SoCs10
Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing10
Combining Intelligence With Rules for Device Modeling: Approximating the Behavior of AlGaN/GaN HEMTs Using a Hybrid Neural Network and Fuzzy Logic Inference System9
Tungsten Trioxide Nanoparticles Modified Cuprous Oxide Film Non-Enzymatic Dopamine Sensor9
Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector9
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs9
Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors9
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module9
Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models9
Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS2 Films9
Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress9
Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment9
Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology9
Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection8
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode8
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor8
Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs8
Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability8
High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications8
Foreword Special Issue on the 5th Latin American Electron Device Conference8
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs8
Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer8
Enhancing Resistive Switching Characteristics of MoS2-based Memristor through O2 Plasma Irradiation-Induced Defects8
Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension8
Capacitively Coupled Near-Threshold Biasing: Low-Power Design Based on Metal Oxide TFTs for IoT Applications7
Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors7
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes7
IEEE ELECTRON DEVICES SOCIETY7
Effect of Layout on TDDB in 45-nm PDSOI N-Channel FETs Under DC and AC Stress7
2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface7
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs7
Experimental Verification of PCH-EM Algorithm for Characterizing DSERN Image Sensors7
Low-Power a-IGZO TFT Emission Driver With Shoot-Through Current-Free QB Control Block7
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM7
Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs7
An On-Chip Filter Using Near-End Cross-Coupling With Jigsaw Puzzle Shaped Resonators7
Scaling Properties of Ru, Rh, and Ir for Future Generation Metallization7
Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications7
Golden List of Reviewers for 20227
Machine Learning-Assisted Device Modeling With Process Variations for Advanced Technology6
A Compact Amorphous In-Ga-Zn-Oxide Thin Film Transistor Pixel Circuit With Two Capacitors for Active Matrix Micro Light-Emitting Diode Displays6
AI-Assisted Design of Drain-Extended FinFET With Stepped Field Plate for Multi-Purpose Applications6
High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates6
Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)6
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile6
Advanced Microfluidic Biofuel Cells Using Gold and Silver Leaf on Paper and PDMS Substrates: Toward Implantable Energy Solution6
Enhancement of Near-Infrared Sensitivity in Silicon-Based Image Sensors to Oblique Chief Rays via Quasi-Surface Plasmon Resonance6
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures6
The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors6
Self-Aligned Staggered Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Ultra-Low Contact Resistance for High-Speed Circuits Application6
Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate6
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates6
Graphene–Silicon Diode for 2-D Heterostructure Electrical Failure Protection6
A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance6
Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications6
Ga2O3-Graphene Hybrid Structure for Near-Infrared Metasurface Absorber6
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter 6
Semiconductor Device Modeling for Circuit and System Design5
Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory5
Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs5
Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging5
Investigation of DC and Low-Frequency Noise performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K to 420 K5
The Implementation of a High-Performance Glucose Biosensor Based on Differential EGFET and Chopper Amplifier5
Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz5
An a-IGZO TFT-Based AMOLED Pixel Circuit Employing Stable Mobility Compensation Suppressing Degradation of Detected VTH5
Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications5
A Highly Robust Integrated Gate Driver Based on Organic TFTs for Active-Matrix Displays5
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability5
Special Issue on Bridging the Data Gap in Photovoltaics with Synthetic Data Generation5
One-Time Programmable Memory for Ultra-Low Power ANN Inference Accelerator With Security Against Thermal Fault Injection5
Electrical and 850 nm Optical Characterization of Back-Gate Controlled 22 nm FDSOI PIN-Diodes Without Front-Gate5
Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors5
Expediting Manufacturing Launch Using Integrated Data With AI/ML Analytic Solutions5
Study of Enhanced Ferromagnetic Behavior of Mn-Doped 2D Janus Cr2S2I2 Monolayer5
Golden List of Reviewers for 20245
Charge-Based Compact Modeling of OECTs for Neuromorphic Applications5
Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges4
BEOL Process Effects on ePCM Reliability4
Table of Contents4
Analog Read Noise and Quantizer Threshold Estimation From Quanta Image Sensor Bit Density4
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators4
Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications4
Achieving High-Performance Solution-Processed Thin-Film Transistors by Doping Strong Reducibility Element Into Indium-Zinc-Oxide4
Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric 4
InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications4
Area-Efficient Power-Rail ESD Clamp Circuit With False-Trigger Immunity in 28nm CMOS Process4
Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga2O34
Editorial4
Scaling Design Effects on Surface Buffer IGBT Characteristics4
A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET4
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application4
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode4
O2 and H2O Barrier-Based High Reliability and Stability Using Polytetrafluoroethylene Passivation Layer for Solution Processed Indium Oxide Thin Film Transistors4
Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements4
Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells4
Flash Memory and Its Manufacturing Technology for Sustainable World4
Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias4
Multilayer Crossbar Array of Amorphous Metal-Oxide Semiconductor Thin Films for Neuromorphic Systems4
Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT4
Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing4
Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs3
Investigation of the DC Performance and Linearity of InAlN/GaN HFETs via Studying the Impact of the Scaling of LGS and LG on the Source Access Resistance3
Generating Predictive Models for Emerging Semiconductor Devices3
Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering3
Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs3
Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off3
Design and Fabrication of PDMS Microfluidic Device Combined With Urea Biosensor for Dynamic and Static Measurements3
Investigating the Role of PM6:Y7 Layer Thickness on Optimizing Non-Fullerene Organic Solar Cells Performance Through Impedance Spectroscopy Analysis3
Design and Thermal Analysis of 2.5D and 3-D Integrated System of a CMOS Image Sensor and a Sparsity-Aware Accelerator for Autonomous Driving3
Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks3
Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays3
Explicit Function Model of Electromagnetic Reliability for CMOS Inverters Under HPM Coupling Based on Physical Mechanism Analysis and Neural Network Algorithm3
Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm23
A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation3
Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge3
Highly Efficient Reconfigurable Stateful Logic Operations Based on CuI Memristor-Only Arrays Prepared With a Solution-Based Process3
Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer3
Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications3
Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes3
Impact of the Scaling of LGS and LG on the On-State Breakdown Voltage of InAlN/GaN HFETs With Localized Fin Under the Gate Electrode3
Machine Learning-Based Compact Model Design for Reconfigurable FETs3
Enhancing Interpretability of Neural Compact Models: Toward Reliable Device Modeling3
Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage3
Foreword Special Issue on the 4th Latin American Electron Device Conference3
Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors3
The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT3
Application of e-Beam Voltage Contrast Technique for Overlay Improvement and Process Window Control in Multi-Patterning Interconnect Scheme3
A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter3
A 65nm Cryogenic CMOS Design and Performance at 4.2K for Quantum State Controller Application3
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes2
Oxide Phototransistor Array With Multiply-and-Accumulation Functions for In-Sensor Image Processing2
Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors2
Role of Solar Cells in Global Energy Transformation2
A Novel Multi-Scale Method for Thermo-Mechanical Simulation of Power Integrated Circuits2
Dielectrics for 2D electronics2
Wide Band Gap Semiconductors for Automotive Applications2
Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology2
Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory2
Balanced Performance Merit on Wind and Solar Energy Contact With Clean Environment Enrichment2
Logic-Compatible Asymmetrical FET for Gain Cell eDRAM With Long Retention and Fast Access Speed2
Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach2
An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs2
Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications2
Table of Contents2
2023 Index IEEE Journal of the Electron Devices Society Vol. 112
Low-Resistive Source/Drain Formation Using Nitrogen Plasma Treatment in Self-Aligned In-Ga-Zn-Sn-O Thin-Film Transistors2
IEEE ELECTRON DEVICES SOCIETY2
Investigating Differences in Performances of top and Bottom Illuminated Organic Solar Cells2
Performance and Scalability of Strain Engineered 2D MoTe2 Phase-Change Memristors2
Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors2
Proposal and Simulation of β-Ga2O3 Hetero-Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage2
A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors2
A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models2
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing2
Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design2
Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques2
2022 Index IEEE Journal of the Electron Devices Society Vol. 102
Field-Effect Passivation of GaN-Based Blue Micro-Light-Emitting Diodes2
From Mega to nano: Beyond one Century of Vacuum Electronics2
Table of Contents2
Semiconductor Device Modeling for Circuit and System Design2
Design for EMI/ESD Immunity for Flexible and Wearable Electronics2
Potentiometric MgO Film pH Sensor Measurement Analysis and Integrated Flexible Printed Circuit Board2
Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs2
High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film2
Utilizing Symmetric BSIM-SOI SPICE Model for Dynamically Depleted RF SOI T/R Switches and Logic Circuits2
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers2
GaN-Based GAA Vertical CMOS Inverter1
Simulation and Optimization of IGZO-Based Neuromorphic System for Spiking Neural Networks1
A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band1
Non Quasi-Static Model of DG Junctionless FETs1
Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection1
Fully Integrated GaN-on-Silicon Power-Rail ESD Clamp Circuit Without Transient Leakage Current During Normal Power-on Operation1
High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications1
Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications1
Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes1
Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations1
High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging1
A Temperature-Dependent SPICE Model of SiC Power Trench MOSFET Switching Behavior Considering Parasitic Parameters1
Spike-Timing Dependent Learning Dynamics in Silicon-Doped Hafnium-Oxide Based Ferroelectric Field Effect Transistors1
Investigation of Photosensitive Polyimide With Low Coefficient of Thermal Expansion and Excellent Adhesion Strength for Advanced Packaging Applications1
Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device1
Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory1
Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors1
Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications1
Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer1
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation1
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices1
High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics1
Cryogenic CMOS RF Device Modeling for Scalable Quantum Computer Design1
Device and System Co-Design of Summing Network With Floating Gate-Based Stochastic Neurons1
Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack1
A Comprehensive Study of Threshold Voltage Extraction Techniques from Room to Cryogenic Temperatures1
Editorial for the J-EDS Special Issue for ESSERC 20241
System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity1
Characterization and Modeling of MOSFET Series Resistance Down to 4 K1
Lithium-ion-Based Resistive Devices of LiCoO2/LiPON/Cu With Ultrathin Interlayers of Titanium Oxide for Neuromorphic Computing1
Study on Amorphous InGaZnO Thin-Film Transistor Modeling Method Based on Artificial Neural Network1
Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated p-GaN HEMTs Circuit Using ASM-GaN Model1
A High-Performance and Low HCI Degradation LDMOS Device With a Hybrid Field Plate1
Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window1
High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method1
A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory1
High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping1
Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation1
Experimental Comparison of HfO2/X-Based ReRAM Devices Switching Properties by the MIM Capacitance1
Optimization of Low-Voltage-Operating Conditions for MG-MOSFETs1
Demonstration of Gate-Related Trap Characterization in 4H-SiC MOSFETs Using Gate Stress Leakage Current1
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors1
Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles1
An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement1
Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid1
A Kinetic Pathway to Orthorhombic HfZrO 1
A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology1
Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing1
Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs1
Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model1
Energy-Efficient Annealing Process of Ferroelectric Hf0.5Zr0.5O2 Capacitor Using Ultraviolet-LED for Green Manufacturing1
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