IEEE Journal of the Electron Devices Society

Papers
(The median citation count of IEEE Journal of the Electron Devices Society is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
Golden List of Reviewers for 202259
Special Section on ESSDERC 202146
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes40
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications39
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode33
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates33
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs32
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs31
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter 28
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures25
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile24
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM23
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism23
Investigation of DC and Low-Frequency Noise Performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K–420 K21
Ga2O3-Graphene Hybrid Structure for Near-Infrared Metasurface Absorber21
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module21
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing20
Enhancing Interpretability of Neural Compact Models: Toward Reliable Device Modeling20
A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation19
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode19
Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias19
Gaussian-Based Analytical Model for Temperature-Dependent I-V Characteristics of GaN HEMTs19
Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge18
A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models18
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes18
Defects Passivation and Performance Enhancement of AlGaN/GaN HEMTs by Supercritical Hydrogen Treatment18
Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology16
Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory16
Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer15
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application15
Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process15
Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs15
Balanced Performance Merit on Wind and Solar Energy Contact With Clean Environment Enrichment15
Characterization and Modeling of MOSFET Series Resistance Down to 4 K14
Investigating Differences in Performances of Top and Bottom Illuminated Organic Solar Cells14
A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory14
Potentiometric MgO Film pH Sensor Measurement Analysis and Integrated Flexible Printed Circuit Board14
Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT14
Directly Fabricated Flexible Photodetector Based on TiO₂-Doped Carbon Nanosheets Film14
Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT14
Cryogenic CMOS RF Device Modeling for Scalable Quantum Computer Design14
Enhancement of the Transient Current Behavior of MIS Tunnel Diodes With Ultra-Edge-Thickened (UET) Oxide under the Consideration of Tunnel Oxide Areas14
High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics13
a-IGZO 3T-2C Pixel Circuit-Based Active-Matrix Self-Capacitive Fingerprint Sensor Array for Full-Area Multi-Identity Recognition13
Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors13
Editorial for the J-EDS Special Issue for ESSERC 202412
An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources12
Liquid Metal-Based Microfluidic Metasurface for Controllable Electromagnetic Wave Reflection Attenuation12
NOR-Type 3-D Synapse Array Architecture Based on Charge-Trap Flash Memory12
Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-2912
A High-Precision Circuit-Simulator-Compatible Model for Constant Phase Element Using Rational Function Approximation12
Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology12
Enhancement of Selectivity for Chemical Mechanical Polishing by Ultra-High-Dose C and Si Ion Implantation12
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures12
Piezotronic N+ -ITO/P-NiO/N-ZnO Heterojunction Thin-Film Diode as a Flexible Energy Scavenger11
A Flexible Printed Circuit Board-Based ZnO Enzymatic Uric Acid Potentiometric Biosensor Measurement and Characterization11
Comprehensive Analysis of Oxidant Effects During ALD Process of Hf0.5Zr0.5O2 Ferroelectric Thin Films11
Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer11
Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device10
Cryogenic Performance and Modeling of Sub-5nm Fin-Width Bulk FinFETs for Quantum Computing Applications10
AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer10
The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET10
Improved Stability of Amorphous InGaZnO 4 Thin-Film Transistors Under Negative Bias Illumination Stress With Split Metal Cover Lines10
Fabrication of Dual Vertical C-Shaped-Channel Nanosheet FETs via a Novel Integration Process for High-Density, Scalable CMOS Applications10
Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier10
Temperature Effect Analysis of the Enzymatic RuO2 Biomedical Sensor for Ascorbic Acid Detection10
Harmonic Enhancement of Terahertz GaN Planar Gunn Oscillators With Multiple Gates10
Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET10
A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology10
Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience10
A 1.1-nJ/Classification True Analog Current Computing on Multilayer Neural Network With Crystalline-IGZO/Si-CMOS Monolithic Stack Technology10
Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated p-GaN HEMTs Circuit Using ASM-GaN Model10
Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs10
Comprehensive Experimental and Simulation Study of Six 1.2 kV SiC MOSFET Layout Topologies10
Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons10
A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time9
Threshold Voltage Shift of Flexible P-Type Poly-Silicon Thin Film Transistors Under Illumination Stress9
Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors9
Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches9
Non-Quasi-Static Modeling of Printed OTFTs9
Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes9
Area and Thickness Scaling of NbOₓ-Based Threshold Switches for Oscillation Neurons9
An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications9
Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic9
Four Hybrid Gates SOI Lateral Insulated Gate Bipolar Transistor With Improved Carrier Controllability9
Real-Time ESD Monitoring and Control in Semiconductor Manufacturing Environments With Silicon Chip of ESD Event Detection9
Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs9
Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n+ Layer9
Superior Turn-Off dV/dt Controllability From Suppression of Dynamic Avalanche in 3300V Scaled IGBTs9
An Improved Method for InP HEMT Noise-Parameter Determination Based on 50-Ω Noise Measurements9
A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs9
Design Decoupling of Inner- and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling8
Reliable Multistate RRAM Devices for Reconfigurable CAM and IMC Applications8
Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches8
A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing8
A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs8
A New IR-Drop Model That Improves Effectively the Brightness Uniformity of an AMOLED Panel8
Editorial8
Editorial for the JEDS Special Issue for EDTM 20248
Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers8
High-Precision GaN-Based-SenseFET Design Based on a Lumped Parameter Electro-Thermal Network Model8
TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization8
Foreword Special Issue on the 5th Latin American Electron Device Conference8
Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter8
Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling8
Optimization of Guard Ring Structures for Superior Dark Current Reduction and Improved Quantum Efficiency in InGaAs/InP APDs8
Exploring GAA-Nanosheet, Forksheet and GAA–Forksheet Architectures: A TCAD-DTCO Study at 90 nm and 120-nm Cell Height8
A New Pixel Circuit for Micro-Light Emitting Diode Displays With Pulse Hybrid Modulation Driving and Compensation8
Bulk Carrier Contaminations and Their Effects on MOSFETs Under Energy Harvesting Systems8
A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter7
Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs7
The Implementation of a High-Performance Glucose Biosensor Based on Differential EGFET and Chopper Amplifier7
Silicon Dioxide Ring Innovations in TSV Structures: Analysis of Thermal-Mechanical and Signal Integrity for 3-D Chip Applications7
High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates7
The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs7
Hybrid Soldering 2.3D Assembly With High Reliability and Low Cost7
Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs7
Study of Enhanced Ferromagnetic Behavior of Mn-Doped 2D Janus Cr₂S₂I₂ Monolayer7
Investigating the Role of PM6:Y7 Layer Thickness on Optimizing Non-Fullerene Organic Solar Cells Performance Through Impedance Spectroscopy Analysis7
Key technologies Supporting High Performance and Reliability of SiC VMOSFET7
Piston-Mode pMUT With Mass Load7
Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform7
A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance7
Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs7
Expediting Manufacturing Launch Using Integrated Data With AI/ML Analytic Solutions7
Flash Memory and Its Manufacturing Technology for Sustainable World7
Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications7
Multilayer Crossbar Array of Amorphous Metal-Oxide Semiconductor Thin Films for Neuromorphic Systems7
Semiconductor Device Modeling for Circuit and System Design7
Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications7
Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress7
Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors7
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers6
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation6
Enhanced Single-Diode Solar Cell Model: Analytical Solutions Using Lambert W Function and Circuit Innovations6
Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET6
Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes6
Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications6
Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance6
Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering6
Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing6
2023 Index IEEE Journal of the Electron Devices Society Vol. 116
Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design6
Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz6
Oxide Phototransistor Array With Multiply-and-Accumulation Functions for In-Sensor Image Processing6
Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations6
Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors6
Call for Nominations for Editor-in-Chief IEEE Transactions on Electron Devices(TED)6
Machine Learning-Based Compact Model Design for Reconfigurable FETs6
Table of Contents6
Dynamic On-Demand Collaborative Charging Scheduling Based on Game Theory6
A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs6
Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems6
Embedded-Based Quadratic Boost Converter With Sliding-Mode Controller for the Integration of Solar Photo-Voltaic Source With Microgrid6
Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window6
Large-Scale Training in Neural Compact Models for Accurate and Adaptable MOSFET Simulation6
Erratum to “Charge-Based Compact Modeling of OECTs for Neuromorphic Applications”6
Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors6
From Mega to nano: Beyond one Century of Vacuum Electronics6
A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design5
Impact of TiN Thickness Uniformity on the Reliability of n-FinFETs5
Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O25
Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions5
Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays5
A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation5
GaN/Si Hetero-Structure Integration of Complementary Logic Inverter for Power Conversion5
Achieving N/P Doping of MoS₂ Through ZnO Interface Engineering in Heterostructures for Semiconductor Devices5
Energy Adaptive Collaborative Charging Scheduling for Wireless Rechargeable Sensor Networks5
Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes5
Call for Nominations for Editor-in-Chief5
A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning5
Insights Into Threshold Voltage Variability in Negative Capacitance Junctionless Transistor5
Performance Projection of Gate-All-Around (GAA)-Based Negative Capacitance Complementary FET (NC-CFET) Relative to Standard CFET5
Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs5
Impact Ionization in LDMOS Transistors: Improved Compact Model and Asymmetry Under Forward and Reverse Modes of Operation5
Analog PWM Method With Sweep Generation Structure Based on P-Type LTPS TFTs for Micro-LED Displays5
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers5
Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs4
Low-Power a-IGZO TFT Emission Driver With Shoot-Through Current-Free QB Control Block4
Modular Integration of a Compact Ku-Band Relativistic Triaxial Klystron Amplifier Packaged With Permanent Magnets for High-Power Microwave Generation4
Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films4
Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures4
1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs4
Cross-Layer Modeling and Simulation for Electrothermal-Reliability With Backside Power Delivery Networks4
The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors4
An Experimentally Verified Temperature Dependent Drain Current Fluctuation Model for Low Temperature Applications4
Guest Editorial Special Section on EDTM 20224
Study on Flake Graphite Cathode Surface Microstructure in Relativistic Magnetrons4
Active-Matrix Digital Microfluidics Design and Optimization for High-Throughput Droplets Manipulation4
Hot Carrier Degradation in Si n-MOSFETs at Cryogenic Temperatures4
Multiple 3D-Printed Miniaturized Microbial Fuel Cells With Embedded Electrodes Optimized by Sustainable and Synergistic Perovskites Materials4
IEEE ELECTRON DEVICES SOCIETY4
Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics 4
Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire Arrays4
Utilization of Graphite Nanoparticles as a Hybrid Hole Transport Layer in Non-Fullerene Organic Solar Cells4
Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS2 Films4
Performance Enhancement of Asymmetrical Double Gate Junctionless CMOS Inverter With 3-nm Critical Feature Size Using Charge Sheet4
Trap Analysis of Normally-Off Ga₂O₃ MOSFET Enabled by Charge Trapping Layer: Photon Stimulated Characterization and TDDB4
Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors4
Statistical Study of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress4
IGZO 2T1C DRAM With Low Operation Voltage and High Current Window4
Mitigating DIBL and Short-Channel Effects for III-V FinFETs With Negative-Capacitance Effects4
The Gold Nanoparticles Enhanced ZnO/GaN UV Detector4
Si Doping in Amorphous GaOx Films via Plasma-Enhanced ALD for Dielectric and Optoelectronic Applications4
Characterization of Vacancy-Type Defects in Mg-and N-Implanted GaN by Using a Monoenergetic Positron Beam4
Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure4
Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes3
Semiconductor Device Modeling for Circuit and System Design3
Editorial3
A Temperature-Dependent SPICE Model of SiC Power Trench MOSFET Switching Behavior Considering Parasitic Parameters3
A Compact Amorphous In-Ga-Zn-Oxide Thin Film Transistor Pixel Circuit With Two Capacitors for Active Matrix Micro Light-Emitting Diode Displays3
High Mobility and Robust Top-Gate In2O3 Thin Film Transistor by Ozone-Based Treatment3
Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium–Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability3
Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory3
Cross-Temperature FeFETs Enabling Long- and Short-Term Memory for Reservoir Computing Network3
Bit Depth of Drivers for Micro-LED Displays Adopting Low-Temperature Polysilicon Oxide Thin-Film Transistors3
Charge-Based Compact Modeling of OECTs for Neuromorphic Applications3
Lithium-ion-Based Resistive Devices of LiCoO2/LiPON/Cu With Ultrathin Interlayers of Titanium Oxide for Neuromorphic Computing3
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors3
Device and System Co-Design of Summing Network With Floating Gate-Based Stochastic Neurons3
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction3
2022 Index IEEE Journal of the Electron Devices Society Vol. 103
Excess Oxygen Modulation Through Channel Thickness Scaling and Annealing Ambient for AlOx-Passivated Ultrathin InOx FETs3
Non Quasi-Static Model of DG Junctionless FETs3
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs3
Role of Solar Cells in Global Energy Transformation3
Scaling Properties of Ru, Rh, and Ir for Future Generation Metallization3
2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface3
Highly Efficient Reconfigurable Stateful Logic Operations Based on CuI Memristor-Only Arrays Prepared With a Solution-Based Process3
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators3
Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks3
Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors3
Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer3
Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications3
An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs3
InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications3
System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity3
Special Issue on Bridging the Data Gap in Photovoltaics with Synthetic Data Generation3
IEEE ELECTRON DEVICES SOCIETY3
Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer3
Improved Algorithm of Dueling DQN for BSIM Parameter Extraction Task3
Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector3
RESURF Ga2O3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage3
Performance Enhancement of Schottky Barrier MOSFET by Laser-Induced Low Temperature Dopant Segregation for Monolithic-3D Integration3
Electrical and 850 nm Optical Characterization of Back-Gate Controlled 22 nm FDSOI PIN-Diodes Without Front-Gate3
Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys3
Impact of Gamma Ray Irradiation on the Blocking Characteristics of Edge Termination on 4H-SiC and a Novel Anti-Ionizing Radiation Technology3
3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET3
Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content2
Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering2
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