npj 2D Materials and Applications

Papers
(The H4-Index of npj 2D Materials and Applications is 36. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
Experimental and theoretical band alignment study of MPS3 (M = Mn, Fe, Co, Ni) for designing tailored 2D heterostructures201
Multiferroic nematic d-wave altermagnetism driven by orbital-order on the honeycomb lattice141
Dynamic dielectric permittivity tensor of in-plane hyperbolic van der Waals MoOCl2 and emergent chiral photonic applications110
Water-based, large-scale transfer of 2D materials grown on sapphire substrates93
Piezoelectricity in NbOI2 for piezotronics and nanogenerators91
Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications86
Nanosheet fabrication from magnon thermal conductivity cuprates for the advanced thermal management86
Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes74
WoundMx: multiplexed detection of wound infection biomarkers with a multimodal sensor system based on laser-induced graphene61
Transient photodoping and phonon dynamics in bulk and monolayer MoS2 by time resolved Raman scattering58
Transition-selective photocurrents in Floquet-driven monolayer MoSe257
Exciton-polarons in the presence of strongly correlated electronic states in a MoSe2/WSe2 moiré superlattice53
Photoluminescence enhancement in two-dimensional semiconductors via spacer-free metallic screening52
Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride52
Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides49
Quantifying stress distribution in ultra-large graphene drums through mode shape imaging49
Exfoliation procedure-dependent optical properties of solution deposited MoS2 films48
Origin of contact polarity at metal-2D transition metal dichalcogenide interfaces48
Engineering altermagnetism via layer shifts and spin order in bilayer MnPS346
Advancements in 2D layered material memristors: unleashing their potential beyond memory45
Non-planar graphene directly synthesized on intracavity optical microresonators for GHz repetition rate mode-locked lasers44
“Popcorn-Like” fabrication for high performance reduced-graphene oxide via laser and microwave reduction process44
High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN44
Multi-functional polymorphic memory based on 2D ferroelectric tunnel junctions43
Programmable phonon-assisted resonant energy transfer between moiré cells in charge-tunable MoSe2-WS2 heterobilayers42
Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy41
Ab initio elucidation of PTCDA intercalation mechanism in MoS2 bilayer41
Impact ionization and the paradox of defects in transition metal dichalcogenide FETs41
Cathode wrapping strategy with metal chalcogenide nanosheet for safer and longer lasting Li-ion batteries40
Bio-inspired “Self-denoising” capability of 2D materials incorporated optoelectronic synaptic array39
Multiphase superconductivity at the interface between ultrathin FeTe islands and Bi2Te339
Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe3 observed through Raman spectroscopy38
Atomistic description of conductive bridge formation in two-dimensional material based memristor38
Gating monolayer and bilayer graphene with a two-dimensional semiconductor37
Two-dimensional C20-based monolayers and heterostructures for photocatalytic overall water splitting37
Enhancing plasmonic superconductivity in layered materials via dynamical Coulomb engineering36
Low T direct plasma assisted growth of graphene on sapphire and its integration in graphene/MoS2 heterostructure-based photodetectors36
Designable exciton mixing through layer alignment in WS2-graphene heterostructures36
0.093353986740112